フォロー
Hyukjoon Yoo
Hyukjoon Yoo
Samsung Electronics / Yonsei University
確認したメール アドレス: yonsei.ac.kr
タイトル
引用先
引用先
A review of phototransistors using metal oxide semiconductors: Research progress and future directions
H Yoo, IS Lee, S Jung, SM Rho, BH Kang, HJ Kim
Advanced Materials 33 (47), 2006091, 2021
1252021
Analysis of the bipolar resistive switching behavior of a biocompatible glucose film for resistive random access memory
SP Park, YJ Tak, HJ Kim, JH Lee, H Yoo, HJ Kim
Advanced Materials 30 (26), 1800722, 2018
1092018
High photosensitive indium–gallium–zinc oxide thin-film phototransistor with a selenium capping layer for visible-light detection
H Yoo, WG Kim, BH Kang, HT Kim, JW Park, DH Choi, TS Kim, JH Lim, ...
ACS applied materials & interfaces 12 (9), 10673-10680, 2020
612020
A selectively processible instant glue passivation layer for indium gallium zinc oxide thin-film transistors fabricated at low temperature
H Yoo, YJ Tak, WG Kim, Y Kim, HJ Kim
Journal of Materials Chemistry C 6 (23), 6187-6193, 2018
302018
Facile fabrication of wire-type indium gallium zinc oxide thin-film transistors applicable to ultrasensitive flexible sensors
Y Kim, YJ Tak, HJ Kim, WG Kim, H Yoo, HJ Kim
Scientific reports 8 (1), 5546, 2018
292018
Multifunctional oxygen scavenger layer for high-performance oxide thin-film transistors with low-temperature processing
MS Kim, HT Kim, H Yoo, DH Choi, JW Park, TS Kim, JH Lim, HJ Kim
ACS Applied Materials & Interfaces 13 (27), 31816-31824, 2021
282021
Vertically graded oxygen deficiency for improving electrical characteristics and stability of indium gallium zinc oxide thin-film transistors
CS Yoon, HT Kim, MS Kim, H Yoo, JW Park, DH Choi, D Kim, HJ Kim
ACS Applied Materials & Interfaces 13 (3), 4110-4116, 2021
272021
Hydrogen Barriers Based on Chemical Trapping Using Chemically Modulated Al2O3 Grown by Atomic Layer Deposition for InGaZnO Thin-Film Transistors
Y Lee, T Nam, S Seo, H Yoon, IK Oh, CH Lee, H Yoo, HJ Kim, W Choi, ...
ACS Applied Materials & Interfaces 13 (17), 20349-20360, 2021
202021
Mechanochemical and thermal treatment for surface functionalization to reduce the activation temperature of In-Ga-Zn-O thin-film transistors
IS Lee, YJ Tak, BH Kang, H Yoo, S Jung, HJ Kim
ACS applied materials & interfaces 12 (16), 19123-19129, 2020
192020
Photo-induced Reactive Oxygen Species Activation for Amorphous Indium–Gallium–Zinc Oxide Thin-Film Transistors Using Sodium Hypochlorite
WG Kim, YJ Tak, H Yoo, HT Kim, JW Park, DH Choi, HJ Kim
ACS Applied Materials & Interfaces 13 (37), 44531-44540, 2021
82021
Rapid and selective green laser activation of InGaZnO thin-film transistors through metal absorption
JW Park, WG Kim, H Yoo, HT Kim, DH Choi, MS Kim, HJ Kim
Journal of Information Display 23 (1), 33-43, 2022
42022
Enhancement of visible light detection for indium–gallium–zinc oxide-based transparent phototransistor via application of porous-structured polytetrafluoroethylene
H Yoo, K Kwak, IS Lee, D Kim, K Park, MS Kim, JS Han, S Lee, TS Kim, ...
Applied Physics Letters 121 (14), 2022
32022
A Review of Phototransistors Using Metal Oxide Semiconductors: Research Progress and Future Directions (Adv. Mater. 47/2021)
H Yoo, IS Lee, S Jung, SM Rho, BH Kang, HJ Kim
Advanced Materials 33 (47), 2170372, 2021
22021
A selectively processible instant glue passivation layer for indium gallium zinc oxide thin-film transistors fabricated at low temperature (vol 6, pg 6187, 2018)
H Yoo, YJ Tak, WG Kim, Y Kim, HJ Kim
JOURNAL OF MATERIALS CHEMISTRY C 6 (38), 10376-10376, 2018
12018
Instant glue passivation layer of indium-gallium-zinc oxide thin film transistors
H Yoo, YJ Tak, BH Kang, HJ Kim
2017 24th International Workshop on Active-Matrix Flatpanel Displays and …, 2017
12017
Photo transistor and display device including the same
TS Kim, HJ Kim, HJ Yoo, JH Lim
US Patent 11,690,273, 2023
2023
9‐3: Student Paper: Widening the Wavelength Absorption Range of Indium Gallium Zinc Oxide Phototransistors through the Capping layer
K Park, H Yoo, DH Choi, S Jung, K Kwak, BH Kang, HJ Kim
SID Symposium Digest of Technical Papers 53 (1), 86-89, 2022
2022
Hydrogen Barriers Based on Chemical Trapping Using Chemically Modulated Al₂O₃ Grown by Atomic Layer Deposition for InGaZnO Thin-Film Transistors
Y Lee, T Nam, S Seo, H Yoon, IK Oh, CH Lee, H Yoo, HJ Kim, W Choi, ...
2021
P‐16: Homojunction Indium–Gallium–Zinc Oxide Thin‐Film Transistors by Selective Simultaneous UV and Thermal Treatment
HT Kim, H Yoo, JW Park, WG Kim, DH Choi, HJ Kim
SID Symposium Digest of Technical Papers 51 (1), 1369-1371, 2020
2020
Correction: A selectively processible instant glue passivation layer for indium gallium zinc oxide thin-film transistors fabricated at low temperature (Journal of Materials …
H Yoo, YJ Tak, WG Kim, Y gyu Kim, HJ Kim
Journal of Materials Chemistry C 6 (38), 10376, 2018
2018
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