フォロー
Min Hyuk Park
タイトル
引用先
引用先
Ferroelectricity and Antiferroelectricity of Doped Thin HfO2‐Based Films
MH Park, YH Lee, HJ Kim, YJ Kim, T Moon, KD Kim, J Mueller, A Kersch, ...
Advanced Materials 27 (11), 1811-1831, 2015
9882015
Evolution of phases and ferroelectric properties of thin Hf0.5Zr0.5O2 films according to the thickness and annealing temperature
M Hyuk Park, H Joon Kim, Y Jin Kim, W Lee, T Moon, C Seong Hwang
Applied Physics Letters 102 (24), 242905, 2013
7042013
Review and perspective on ferroelectric HfO2-based thin films for memory applications
MH Park, YH Lee, T Mikolajick, U Schroeder, CS Hwang
MRS Communications 8 (3), 795-808, 2018
4352018
The effects of crystallographic orientation and strain of thin Hf0.5Zr0.5O2 film on its ferroelectricity
M Hyuk Park, H Joon Kim, Y Jin Kim, T Moon, C Seong Hwang
Applied Physics Letters 104 (7), 072901-072901-5, 2014
3982014
Thin HfxZr1‐xO2 Films: A New Lead‐Free System for Electrostatic Supercapacitors with Large Energy Storage Density and Robust Thermal Stability
MH Park, HJ Kim, YJ Kim, T Moon, KD Kim, CS Hwang
Advanced Energy Materials 4 (16), 1400610, 2014
3342014
Surface and grain boundary energy as the key enabler of ferroelectricity in nanoscale hafnia-zirconia: a comparison of model and experiment
MH Park, YH Lee, HJ Kim, T Schenk, W Lee, K Do Kim, FPG Fengler, ...
Nanoscale 9 (28), 9973-9986, 2017
3032017
Lanthanum-Doped Hafnium Oxide: A Robust Ferroelectric Material.
U Schroeder, C Richter, MH Park, T Schenk, M Pešić, M Hoffmann, ...
Inorganic chemistry, 2018
2922018
A comprehensive study on the structural evolution of HfO 2 thin films doped with various dopants
MH Park, T Schenk, CM Fancher, ED Grimley, C Zhou, C Richter, ...
Journal of Materials Chemistry C 5 (19), 4677-4690, 2017
2892017
Ferroelectric hafnium oxide for ferroelectric random-access memories and ferroelectric field-effect transistors
T Mikolajick, S Slesazeck, MH Park, U Schroeder
MRS Bulletin 43 (5), 340-346, 2018
2722018
Grain size engineering for ferroelectric Hf0.5Zr0.5O2 films by an insertion of Al2O3 interlayer
HJ Kim, MH Park, YJ Kim, YH Lee, W Jeon, T Gwon, T Moon, KD Kim, ...
Applied Physics Letters 105 (19), 192903, 2014
2412014
A study on the wake-up effect of ferroelectric Hf 0.5 Zr 0.5 O 2 films by pulse-switching measurement
HJ Kim, MH Park, YJ Kim, YH Lee, T Moon, K Do Kim, SD Hyun, ...
Nanoscale 8 (3), 1383-1389, 2016
2372016
Next generation ferroelectric materials for semiconductor process integration and their applications
T Mikolajick, S Slesazeck, H Mulaosmanovic, MH Park, S Fichtner, ...
Journal of Applied Physics 129 (10), 100901, 2021
2352021
Improved Ferroelectric Switching Endurance of La-Doped Hf0.5Zr0.5O2 Thin Films
AG Chernikova, MG Kozodaev, DV Negrov, EV Korostylev, MH Park, ...
ACS applied materials & interfaces 10 (3), 2701-2708, 2018
2352018
The fundamentals and applications of ferroelectric HfO2
U Schroeder, MH Park, T Mikolajick, CS Hwang
Nature Reviews Materials 7 (8), 653-669, 2022
2182022
Ferroelectricity in undoped-HfO 2 thin films induced by deposition temperature control during atomic layer deposition
KD Kim, MH Park, HJ Kim, YJ Kim, T Moon, YH Lee, SD Hyun, T Gwon, ...
Journal of Materials Chemistry C 4 (28), 6864-6872, 2016
2122016
Toward a multifunctional monolithic device based on pyroelectricity and the electrocaloric effect of thin antiferroelectric Hf x Zr 1− x O 2 films
MH Park, HJ Kim, YJ Kim, T Moon, K Do Kim, CS Hwang
Nano Energy 12, 131-140, 2015
2072015
Effect of forming gas annealing on the ferroelectric properties of Hf0.5Zr0.5O2 thin films with and without Pt electrodes
M Hyuk Park, H Joon Kim, Y Jin Kim, W Lee, H Kyeom Kim, ...
Applied Physics Letters 102 (11), 112914, 2013
2062013
Temporary formation of highly conducting domain walls for non-destructive read-out of ferroelectric domain-wall resistance switching memories
J Jiang, ZL Bai, ZH Chen, L He, DW Zhang, QH Zhang, JA Shi, MH Park, ...
Nature materials 17 (1), 49-56, 2018
2052018
Understanding the formation of the metastable ferroelectric phase in hafnia–zirconia solid solution thin films
MH Park, YH Lee, HJ Kim, YJ Kim, T Moon, K Do Kim, SD Hyun, ...
Nanoscale 10 (2), 716-725, 2018
1962018
Effect of Zr Content on the Wake-Up Effect in Hf1–xZrxO2 Films
MH Park, HJ Kim, YJ Kim, YH Lee, T Moon, KD Kim, SD Hyun, F Fengler, ...
ACS applied materials & interfaces 8 (24), 15466-15475, 2016
1942016
現在システムで処理を実行できません。しばらくしてからもう一度お試しください。
論文 1–20