フォロー
Jonatan Slotte
Jonatan Slotte
Senior university lecturer, Aalto University
確認したメール アドレス: aalto.fi
タイトル
引用先
引用先
Concentration dependent and independent Si diffusion in ion-implanted GaAs
T Ahlgren, J Likonen, J Slotte, J Räisänen, M Rajatora, J Keinonen
Physical Review B 56 (8), 4597, 1997
781997
Native point defects in GaSb
J Kujala, N Segercrantz, F Tuomisto, J Slotte
Journal of Applied Physics 116 (14), 2014
512014
Vacancy-phosphorus complexes in strained Structure and stability
SL Sihto, J Slotte, J Lento, K Saarinen, EV Monakhov, AY Kuznetsov, ...
Physical Review B 68 (11), 115307, 2003
502003
Fluence, flux, and implantation temperature dependence of ion-implantation-induced defect production in 4H–SiC
J Slotte, K Saarinen, MS Janson, A Hallén, AY Kuznetsov, BG Svensson, ...
Journal of Applied Physics 97 (3), 2005
372005
Direct observations of the vacancy and its annealing in germanium
J Slotte, S Kilpeläinen, F Tuomisto, J Räisänen, AN Larsen
Physical Review B 83 (23), 235212, 2011
352011
Evolution of vacancy-related defects upon annealing of ion-implanted germanium
J Slotte, M Rummukainen, F Tuomisto, VP Markevich, AR Peaker, ...
Physical Review B 78 (8), 085202, 2008
322008
Vacancy generation in liquid phase epitaxy of Si
A La Magna, V Privitera, G Fortunato, M Cuscunà, BG Svensson, ...
Physical Review B 75 (23), 235201, 2007
302007
Divacancy clustering in neutron-irradiated and annealed -type germanium
K Kuitunen, F Tuomisto, J Slotte, I Capan
Physical Review B 78 (3), 033202, 2008
292008
On the manifestation of phosphorus-vacancy complexes in epitaxial Si: P films
SK Dhayalan, J Kujala, J Slotte, G Pourtois, E Simoen, E Rosseel, ...
Applied Physics Letters 108 (8), 2016
262016
Influence of silicon doping on vacancies and optical properties of AlxGa1− xN thin films
J Slotte, F Tuomisto, K Saarinen, CG Moe, S Keller, SP DenBaars
Applied physics letters 90 (15), 2007
262007
Formation of vacancy-impurity complexes in heavily Zn-doped InP
J Slotte, K Saarinen, A Salmi, S Simula, R Aavikko, P Hautojärvi
Physical Review B 67 (11), 115209, 2003
262003
Evidence of a second acceptor state of the center in
K Kuitunen, F Tuomisto, J Slotte
Physical Review B 76 (23), 233202, 2007
232007
Tensile strain in arsenic heavily doped Si
G Borot, L Rubaldo, L Clement, R Pantel, D Dutartre, K Kuitunen, J Slotte, ...
Journal of Applied Physics 102 (10), 2007
222007
Electrical compensation via vacancy–donor complexes in arsenic-implanted and laser-annealed germanium
T Kalliovaara, J Slotte, I Makkonen, J Kujala, F Tuomisto, R Milazzo, ...
Applied Physics Letters 109 (18), 2016
202016
Implantation defects and n-type doping in Ge and Ge rich SiGe
AR Peaker, VP Markevich, B Hamilton, ID Hawkins, J Slotte, K Kuitunen, ...
Thin Solid Films 517 (1), 152-154, 2008
202008
Vacancy-impurity pairs in relaxed layers studied by positron annihilation spectroscopy
M Rummukainen, J Slotte, K Saarinen, HH Radamson, J Hållstedt, ...
Physical Review B 73 (16), 165209, 2006
192006
Instability of the Sb vacancy in GaSb
N Segercrantz, J Slotte, F Tuomisto, K Mizohata, J Räisänen
Physical Review B 95 (18), 184103, 2017
182017
Point defect balance in epitaxial GaSb
N Segercrantz, J Slotte, I Makkonen, J Kujala, F Tuomisto, Y Song, ...
Applied Physics Letters 105 (8), 2014
182014
Stabilization of Ge-rich defect complexes originating from centers in
S Kilpeläinen, K Kuitunen, F Tuomisto, J Slotte, HH Radamson, ...
Physical Review B 81 (13), 132103, 2010
172010
Vacancy-donor complexes in highly n-type Ge doped with As, P and Sb
J Kujala, T Südkamp, J Slotte, I Makkonen, F Tuomisto, H Bracht
Journal of Physics: Condensed Matter 28 (33), 335801, 2016
162016
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