| Measurement of the band offsets between amorphous and silicon LF Edge, DG Schlom, SA Chambers, E Cicerrella, JL Freeouf, ... Applied physics letters 84 (5), 726-728, 2004 | 198 | 2004 |
| Extremely thin SOI (ETSOI) CMOS with record low variability for low power system-on-chip applications K Cheng, A Khakifirooz, P Kulkarni, S Ponoth, J Kuss, D Shahrjerdi, ... 2009 IEEE international electron devices meeting (IEDM), 1-4, 2009 | 172 | 2009 |
| A manufacturable dual channel (Si and SiGe) high-k metal gate CMOS technology with multiple oxides for high performance and low power applications S Krishnan, U Kwon, N Moumen, MW Stoker, ECT Harley, S Bedell, ... 2011 International Electron Devices Meeting, 28.1. 1-28.1. 4, 2011 | 129 | 2011 |
| High performance extremely thin SOI (ETSOI) hybrid CMOS with Si channel NFET and strained SiGe channel PFET K Cheng, A Khakifirooz, N Loubet, S Luning, T Nagumo, M Vinet, Q Liu, ... 2012 International Electron Devices Meeting, 18.1. 1-18.1. 4, 2012 | 124 | 2012 |
| Low-frequency charge noise in Si/SiGe quantum dots EJ Connors, JJ Nelson, H Qiao, LF Edge, JM Nichol Physical Review B 100 (16), 165305, 2019 | 123 | 2019 |
| High performance UTBB FDSOI devices featuring 20nm gate length for 14nm node and beyond Q Liu, M Vinet, J Gimbert, N Loubet, R Wacquez, L Grenouillet, Y Le Tiec, ... 2013 IEEE International Electron Devices Meeting, 9.2. 1-9.2. 4, 2013 | 118 | 2013 |
| A 0.063 µm2FinFET SRAM cell demonstration with conventional lithography using a novel integration scheme with aggressively scaled fin and gate pitch VS Basker, T Standaert, H Kawasaki, CC Yeh, K Maitra, T Yamashita, ... 2010 Symposium on VLSI Technology, 19-20, 2010 | 118 | 2010 |
| Suppression of subcutaneous oxidation during the deposition of amorphous lanthanum aluminate on silicon LF Edge, DG Schlom, RT Brewer, YJ Chabal, JR Williams, SA Chambers, ... Applied physics letters 84 (23), 4629-4631, 2004 | 118 | 2004 |
| Circuit quantum electrodynamics architecture for gate-defined quantum dots in silicon X Mi, JV Cady, DM Zajac, J Stehlik, LF Edge, JR Petta Applied Physics Letters 110 (4), 2017 | 114 | 2017 |
| Fully depleted extremely thin SOI technology fabricated by a novel integration scheme featuring implant-free, zero-silicon-loss, and faceted raised source/drain K Cheng, A Khakifirooz, P Kulkarni, S Kanakasabapathy, S Schmitz, ... 2009 Symposium on VLSI Technology, 212-213, 2009 | 96 | 2009 |
| 22 nm technology compatible fully functional 0.1 μm26T-SRAM cell BS Haran, A Kumar, L Adam, J Chang, V Basker, S Kanakasabapathy, ... 2008 IEEE International Electron Devices Meeting, 1-4, 2008 | 96 | 2008 |
| Ultra-thin-body and BOX (UTBB) fully depleted (FD) device integration for 22nm node and beyond Q Liu, A Yagishita, N Loubet, A Khakifirooz, P Kulkarni, T Yamamoto, ... 2010 Symposium on VLSI Technology, 61-62, 2010 | 91 | 2010 |
| Outdiffusion of La and Al from amorphous LaAlO3 in direct contact with Si (001) P Sivasubramani, MJ Kim, BE Gnade, RM Wallace, LF Edge, DG Schlom, ... Applied Physics Letters 86 (20), 2005 | 90 | 2005 |
| Measurement of oxygen diffusion in nanometer scale HfO2 gate dielectric films S Zafar, H Jagannathan, LF Edge, D Gupta Applied Physics Letters 98 (15), 2011 | 85 | 2011 |
| Conduction band-edge States associated with the removal of d-state degeneracies by the Jahn-Teller effect G Lucovsky, CC Fulton, Y Zhang, Y Zou, J Luning, LF Edge, JL Whitten, ... IEEE Transactions on Device and Materials Reliability 5 (1), 65-83, 2005 | 85 | 2005 |
| Electrical characterization of amorphous lanthanum aluminate thin films grown by molecular-beam deposition on silicon LF Edge, DG Schlom, P Sivasubramani, RM Wallace, B Holländer, ... Applied physics letters 88 (11), 2006 | 84 | 2006 |
| Site-Selective Quantum Control in an Isotopically Enriched Quadruple Quantum Dot AJ Sigillito, JC Loy, DM Zajac, MJ Gullans, LF Edge, JR Petta Physical Review Applied 11 (6), 061006, 2019 | 83 | 2019 |
| Coherent transfer of quantum information in a silicon double quantum dot using resonant SWAP gates AJ Sigillito, MJ Gullans, LF Edge, M Borselli, JR Petta npj Quantum Information 5 (1), 110, 2019 | 79 | 2019 |
| Si-compatible candidates for high-κ dielectrics with the P b n m perovskite structure S Coh, T Heeg, JH Haeni, MD Biegalski, J Lettieri, LF Edge, KE O’Brien, ... Physical Review B 82 (6), 064101, 2010 | 73 | 2010 |
| Charge-noise spectroscopy of Si/SiGe quantum dots via dynamically-decoupled exchange oscillations EJ Connors, J Nelson, LF Edge, JM Nichol Nature communications 13 (1), 940, 2022 | 67 | 2022 |
