| High-mobility ultrathin semiconducting films prepared by spin coating DB Mitzi, LL Kosbar, CE Murray, M Copel, A Afzali Nature 428 (6980), 299-303, 2004 | 630 | 2004 |
| Stress in thin films and coatings: Current status, challenges, and prospects G Abadias, E Chason, J Keckes, M Sebastiani, GB Thompson, E Barthel, ... Journal of Vacuum Science & Technology A 36 (2), 2018 | 629 | 2018 |
| Sharp reduction of contact resistivities by effective Schottky barrier lowering with silicides as diffusion sources Z Zhang, F Pagette, C D'emic, B Yang, C Lavoie, Y Zhu, M Hopstaken, ... IEEE Electron Device Letters 31 (7), 731-733, 2010 | 281 | 2010 |
| Liner materials for direct electrodeposition of Cu MW Lane, CE Murray, FR McFeely, PM Vereecken, R Rosenberg Applied physics letters 83 (12), 2330-2332, 2003 | 231 | 2003 |
| Low-energy proton-induced single-event-upsets in 65 nm node, silicon-on-insulator, latches and memory cells KP Rodbell, DF Heidel, HHK Tang, MS Gordon, P Oldiges, CE Murray IEEE Transactions on Nuclear Science 54 (6), 2474-2479, 2007 | 201 | 2007 |
| High-resolution three-dimensional structural microscopy by single-angle Bragg ptychography SO Hruszkewycz, M Allain, MV Holt, CE Murray, JR Holt, PH Fuoss, ... Nature materials 16 (2), 244-251, 2017 | 111 | 2017 |
| Investigating surface loss effects in superconducting transmon qubits JM Gambetta, CE Murray, YKK Fung, DT McClure, O Dial, W Shanks, ... IEEE Transactions on Applied Superconductivity 27 (1), 1-5, 2016 | 110 | 2016 |
| Solution-processed metal chalcogenide films for p-type transistors DJ Milliron, DB Mitzi, M Copel, CE Murray Chemistry of materials 18 (3), 587-590, 2006 | 109 | 2006 |
| Quantitative nanoscale imaging of lattice distortions in epitaxial semiconductor heterostructures using nanofocused X-ray Bragg projection ptychography SO Hruszkewycz, MV Holt, CE Murray, J Bruley, J Holt, A Tripathi, ... Nano letters 12 (10), 5148-5154, 2012 | 95 | 2012 |
| Varying capacitance voltage contrast structures to determine defect resistance C Lavoie, CE Murray, OD Patterson, RL Wisnieff US Patent 7,927,895, 2011 | 93 | 2011 |
| High-mobility p-type transistor based on a spin-coated metal telluride semiconductor DB Mitzi, M Copel, CE Murray ADVANCED MATERIALS-DEERFIELD BEACH THEN WEINHEIM- 18 (18), 2448, 2006 | 87 | 2006 |
| p-FET with a strained nanowire channel and embedded SiGe source and drain stressors G Cohen, CE Murray, MJ Rooks US Patent 8,399,314, 2013 | 81 | 2013 |
| The effect of Cu diffusion on the TDDB behavior in a low-k interlevel dielectrics JR Lloyd, CE Murray, S Ponoth, S Cohen, E Liniger Microelectronics Reliability 46 (9-11), 1643-1647, 2006 | 76 | 2006 |
| 32 and 45 nm radiation-hardened-by-design (RHBD) SOI latches KP Rodbell, DF Heidel, JA Pellish, PW Marshall, HHK Tang, CE Murray, ... IEEE Transactions on Nuclear Science 58 (6), 2702-2710, 2011 | 72 | 2011 |
| Process for preparing electronics structures using a sacrificial multilayer hardmask scheme ME Colburn, RA Donaton, CE Murray, SV Nitta, S Purushothaman, ... US Patent 7,371,684, 2008 | 69 | 2008 |
| Elastic strain relaxation in free-standing SiGe/Si structures PM Mooney, GM Cohen, JO Chu, CE Murray Applied Physics Letters 84 (7), 1093-1095, 2004 | 66 | 2004 |
| High-resolution strain mapping in heteroepitaxial thin-film features CE Murray, HF Yan, IC Noyan, Z Cai, B Lai Journal of applied physics 98 (1), 2005 | 60 | 2005 |
| Air channel interconnects for 3-D integration LL Hsu, BL Ji, F Liu, CE Murray US Patent 8,198,174, 2012 | 59 | 2012 |
| Process of forming copper structures M Lane, FR McFeely, C Murray, R Rosenberg US Patent 6,812,143, 2004 | 57 | 2004 |
| Strain imaging of nanoscale semiconductor heterostructures with X-ray Bragg projection ptychography MV Holt, SO Hruszkewycz, CE Murray, JR Holt, DM Paskiewicz, PH Fuoss Physical review letters 112 (16), 165502, 2014 | 55 | 2014 |
