| Fabrication and characterization of low defect density GaN using facet-controlled epitaxial lateral overgrowth (FACELO) K Hiramatsu, K Nishiyama, M Onishi, H Mizutani, M Narukawa, ... Journal of Crystal Growth 221 (1-4), 316-326, 2000 | 550 | 2000 |
| Recent progress in selective area growth and epitaxial lateral overgrowth of III‐nitrides: effects of reactor pressure in MOVPE growth K Hiramatsu, K Nishiyama, A Motogaito, H Miyake, Y Iyechika, T Maeda physica status solidi (a) 176 (1), 535-543, 1999 | 380 | 1999 |
| Preparation of high-quality AlN on sapphire by high-temperature face-to-face annealing H Miyake, CH Lin, K Tokoro, K Hiramatsu Journal of Crystal Growth 456, 155-159, 2016 | 288 | 2016 |
| AlGaN-based deep UV LEDs grown on sputtered and high temperature annealed AlN/sapphire N Susilo, S Hagedorn, D Jaeger, H Miyake, U Zeimer, C Reich, ... Applied Physics Letters 112 (4), 2018 | 206 | 2018 |
| Annealing of an AlN buffer layer in N2–CO for growth of a high-quality AlN film on sapphire H Miyake, G Nishio, S Suzuki, K Hiramatsu, H Fukuyama, J Kaur, ... Applied Physics Express 9 (2), 025501, 2016 | 201 | 2016 |
| Search for the Majorana nature of neutrinos in the inverted mass ordering region with KamLAND-Zen S Abe, S Asami, M Eizuka, S Futagi, A Gando, Y Gando, T Gima, A Goto, ... Physical Review Letters 130 (5), 051801, 2023 | 164 | 2023 |
| Effects of sodium on electrical properties in Cu2ZnSnS4 single crystal A Nagaoka, H Miyake, T Taniyama, K Kakimoto, Y Nose, MA Scarpulla, ... Applied Physics Letters 104 (15), 2014 | 149 | 2014 |
| Effects of reactor pressure on epitaxial lateral overgrowth of GaN via low-pressure metalorganic vapor phase epitaxy H Miyake, A Motogaito, K Hiramatsu Japanese journal of applied physics 38 (9A), L1000, 1999 | 129 | 1999 |
| Impacts of Si-doping and resultant cation vacancy formation on the luminescence dynamics for the near-band-edge emission of Al0. 6Ga0. 4N films grown on AlN templates by … SF Chichibu, H Miyake, Y Ishikawa, M Tashiro, T Ohtomo, K Furusawa, ... Journal of Applied Physics 113 (21), 2013 | 116 | 2013 |
| Room-temperature operation of AlGaN ultraviolet-B laser diode at 298 nm on lattice-relaxed Al0. 6Ga0. 4N/AlN/sapphire K Sato, S Yasue, K Yamada, S Tanaka, T Omori, S Ishizuka, S Teramura, ... Applied Physics Express 13 (3), 031004, 2020 | 114 | 2020 |
| Method for fabricating III-V group compound semiconductor K Hiramatsu, H Miyake, S Bohyama, T Maeda, Y Iyechika US Patent 6,756,246, 2004 | 105 | 2004 |
| Optical constants of and T Kawashima, S Adachi, H Miyake, K Sugiyama Journal of applied physics 84 (9), 5202-5209, 1998 | 103 | 1998 |
| Preparation of Cu2ZnSnS4 single crystals from Sn solutions A Nagaoka, K Yoshino, H Taniguchi, T Taniyama, H Miyake Journal of Crystal Growth 341 (1), 38-41, 2012 | 95 | 2012 |
| Raman scattering spectroscopy of residual stresses in epitaxial AlN films S Yang, R Miyagawa, H Miyake, K Hiramatsu, H Harima Applied physics express 4 (3), 031001, 2011 | 95 | 2011 |
| Sharp band edge photoluminescence of high-purity single crystals K Yoshino, T Ikari, S Shirakata, H Miyake, K Hiramatsu Applied Physics Letters 78 (6), 742-744, 2001 | 93 | 2001 |
| Improvement mechanism of sputtered AlN films by high-temperature annealing S Xiao, R Suzuki, H Miyake, S Harada, T Ujihara Journal of Crystal Growth 502, 41-44, 2018 | 92 | 2018 |
| Correlation between intrinsic defects and electrical properties in the high-quality Cu2ZnSnS4 single crystal A Nagaoka, H Miyake, T Taniyama, K Kakimoto, K Yoshino Applied Physics Letters 103 (11), 2013 | 91 | 2013 |
| Group III-V compound semiconductor and method of producing the same K Hiramatsu, H Miyake, T Maeda, Y Iyechika US Patent 6,503,610, 2003 | 87 | 2003 |
| Optical and crystalline properties of epitaxial-lateral-overgrown-GaN using tungsten mask by hydride vapor phase epitaxy HSH Sone, SNS Nambu, YKY Kawaguchi, MYM Yamaguchi, ... Japanese journal of applied physics 38 (4A), L356, 1999 | 80 | 1999 |
| Reduction of threading dislocation density and suppression of cracking in sputter-deposited AlN templates annealed at high temperatures K Uesugi, Y Hayashi, K Shojiki, H Miyake Applied Physics Express 12 (6), 065501, 2019 | 75 | 2019 |
