Yasuo Koide
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Effects of ain buffer layer on crystallographic structure and on electrical and optical properties of GaN and Ga1− xAlxN (0< x≦ 0.4) films grown on sapphire substrate by MOVPE
I Akasaki, H Amano, Y Koide, K Hiramatsu, N Sawaki
Journal of crystal growth 98 (1-2), 209-219, 1989
Single-crystalline ZnS nanobelts as ultraviolet-light sensors
X Fang, Y Bando, M Liao, UK Gautam, C Zhi, B Dierre, B Liu, T Zhai, ...
Advanced Materials 21 (20), 2034-2039, 2009
Centimeter‐Long V2O5 Nanowires: From Synthesis to Field‐Emission, Electrochemical, Electrical Transport, and Photoconductive Properties
T Zhai, H Liu, H Li, X Fang, M Liao, L Li, H Zhou, Y Koide, Y Bando, ...
Advanced Materials 23 (22), 2547-2552, 2010
Single‐crystalline CdS nanobelts for excellent field‐emitters and ultrahigh quantum‐efficiency photodetectors
L Li, P Wu, X Fang, T Zhai, L Dai, M Liao, Y Koide, H Wang, Y Bando, ...
Advanced Materials 29 (22), 3161-3165, 2010
Efficient Assembly of Bridged β‐Ga2O3 Nanowires for Solar‐Blind Photodetection
Y Li, T Tokizono, M Liao, M Zhong, Y Koide, I Yamada, JJ Delaunay
Advanced Functional Materials 20 (22), 3972-3978, 2010
Effects of surface treatments and metal work functions on electrical properties at p-GaN/metal interfaces
H Ishikawa, S Kobayashi, Y Koide, S Yamasaki, S Nagai, J Umezaki, ...
Journal of applied physics 81 (3), 1315-1322, 1997
Fabrication of High-Quality In2Se3 Nanowire Arrays toward High-Performance Visible-Light Photodetectors
T Zhai, X Fang, M Liao, X Xu, L Li, B Liu, Y Koide, Y Ma, J Yao, Y Bando, ...
ACS nano 4 (3), 1596-1602, 2010
Polarization independent visible color filter comprising an aluminum film with surface-plasmon enhanced transmission through a subwavelength array of holes
D Inoue, A Miura, T Nomura, H Fujikawa, K Sato, N Ikeda, D Tsuya, ...
Applied Physics Letters 98 (9), 2011
Energy band‐gap bowing parameter in an AlxGa1−x N alloy
Y Koide, H Itoh, MRH Khan, K Hiramatu, N Sawaki, I Akasaki
Journal of applied physics 61 (9), 4540-4543, 1987
Ultrahigh‐Performance Solar‐Blind Photodetectors Based on Individual Single‐crystalline In2Ge2O7 Nanobelts
L Li, PS Lee, C Yan, T Zhai, X Fang, M Liao, Y Koide, Y Bando, D Golberg
Advanced Materials 45 (22), 5145-5149, 2010
Flexible ultraviolet photodetectors with broad photoresponse based on branched ZnS-ZnO heterostructure nanofilms.
W Tian, C Zhang, T Zhai, SL Li, X Wang, J Liu, X Jie, D Liu, M Liao, ...
Advanced Materials (Deerfield Beach, Fla.) 26 (19), 3088-3093, 2014
An efficient way to assemble ZnS nanobelts as ultraviolet‐light sensors with enhanced photocurrent and stability
X Fang, Y Bando, M Liao, T Zhai, UK Gautam, L Li, Y Koide, D Golberg
Advanced Functional Materials 20 (3), 500-508, 2010
High-Performance Blue/Ultraviolet-Light-Sensitive ZnSe-Nanobelt Photodetectors.
X Fang, S Xiong, T Zhai, Y Bando, M Liao, UK Gautam, Y Koide, X Zhang, ...
Advanced Materials (Deerfield Beach, Fla.) 21 (48), 5016-5021, 2009
Deep-ultraviolet solar-blind photoconductivity of individual gallium oxide nanobelts
L Li, E Auer, M Liao, X Fang, T Zhai, UK Gautam, A Lugstein, Y Koide, ...
Nanoscale 3 (3), 1120-1126, 2011
Effects of annealing in an oxygen ambient on electrical properties of ohmic contacts to p-type GaN
Y Koide, T Maeda, T Kawakami, S Fujita, T Uemura, N Shibata, ...
Journal of electronic materials 28, 341-346, 1999
Electrical transport and high-performance photoconductivity in individual ZrS (2) nanobelts.
L Li, X Fang, T Zhai, M Liao, UK Gautam, X Wu, Y Koide, Y Bando, ...
Advanced Materials (Deerfield Beach, Fla.) 22 (37), 4151-4156, 2010
Single‐Crystalline Sb2Se3 Nanowires for High‐Performance Field Emitters and Photodetectors
T Zhai, M Ye, L Li, X Fang, M Liao, Y Li, Y Koide, Y Bando, D Golberg
Advanced Materials 22 (40), 4530-4533, 2010
Effect of AlN buffer layer on AlGaN/α-Al2O3 heteroepitaxial growth by metalorganic vapor phase epitaxy
Y Koide, N Itoh, K Itoh, N Sawaki, I Akasaki
Japanese journal of applied physics 27 (7R), 1156, 1988
Low contact resistance metals for graphene based devices
E Watanabe, A Conwill, D Tsuya, Y Koide
Diamond and Related Materials 24, 171-174, 2012
Extreme dielectric strength in boron doped homoepitaxial diamond
PN Volpe, P Muret, J Pernot, F Omnès, T Teraji, Y Koide, F Jomard, ...
Applied Physics Letters 97 (22), 2010
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