Sufi Zafar
Sufi Zafar
IBM TJ Watson Research Center, Yorktown Heights, NY
確認したメール アドレス:
The negative bias temperature instability in MOS devices: A review
JH Stathis, S Zafar
Microelectronics Reliability 46 (2-4), 270-286, 2006
Charge trapping related threshold voltage instabilities in high permittivity gate dielectric stacks
S Zafar, A Callegari, E Gusev, MV Fischetti
Journal of Applied physics 93 (11), 9298-9303, 2003
Ultrathin high-K gate stacks for advanced CMOS devices
EP Gusev, DA Buchanan, E Cartier, A Kumar, D DiMaria, S Guha, ...
Electron Devices Meeting, 2001. IEDM'01. Technical Digest. International, 20 …, 2001
Threshold voltage instabilities in high-/spl kappa/gate dielectric stacks
S Zafar, A Kumar, E Gusev, E Cartier
IEEE Transactions on Device and Materials Reliability 5 (1), 45-64, 2005
A comparative study of NBTI and PBTI (charge trapping) in SiO2/HfO2 stacks with FUSI, TiN, Re gates
S Zafar, Y Kim, V Narayanan, C Cabral, V Paruchuri, B Doris, J Stathis, ...
2006 Symposium on VLSI Technology, 2006. Digest of Technical Papers., 23-25, 2006
Charge trapping in ultrathin hafnium oxide
WJ Zhu, TP Ma, S Zafar, T Tamagawa
IEEE Electron Device Letters 23 (10), 597-599, 2002
The electronic conduction mechanism in barium strontium titanate thin films
S Zafar, RE Jones, B Jiang, B White, V Kaushik, S Gillespie
Applied physics letters 73 (24), 3533-3535, 1998
Oxygen vacancy mobility determined from current measurements in thin films
S Zafar, RE Jones, B Jiang, B White, P Chu, D Taylor, S Gillespie
Applied physics letters 73 (2), 175-177, 1998
Personal video recorder systems and methods
JP Baumgartner, KF Carpenter Jr, MD Ellis, DR Gaydou
US Patent 8,156,528, 2012
Memory device that includes passivated nanoclusters and method for manufacture
R Muralidhar, CK Subramanian, S Madhukar, BE White, MA Sadd, S Zafar, ...
US Patent 6,297,095, 2001
Statistical mechanics based model for negative bias temperature instability induced degradation
S Zafar
Journal of applied physics 97 (10), 103709, 2005
Investigation of bulk and interfacial properties of thin film capacitors
S Zafar, RE Jones, P Chu, B White, B Jiang, D Taylor, P Zurcher, ...
Applied physics letters 72 (22), 2820-2822, 1998
A manufacturable dual channel (Si and SiGe) high-k metal gate CMOS technology with multiple oxides for high performance and low power applications
S Krishnan, U Kwon, N Moumen, MW Stoker, ECT Harley, S Bedell, ...
2011 International Electron Devices Meeting, 28.1. 1-28.1. 4, 2011
Charge trapping in high k gate dielectric stacks
S Zafar, A Callegari, E Gusev, MV Fischetti
Digest. International Electron Devices Meeting,, 517-520, 2002
High-performance high-κ/metal gates for 45nm CMOS and beyond with gate-first processing
M Chudzik, B Doris, R Mo, J Sleight, E Cartier, C Dewan, D Park, H Bu, ...
2007 IEEE Symposium on VLSI Technology, 194-195, 2007
Threshold voltage control in NiSi-gated MOSFETs through silicidation induced impurity segregation (SIIS)
J Kedzierski, D Boyd, P Ronsheim, S Zafar, J Newbury, J Ott, C Cabral, ...
IEEE International Electron Devices Meeting 2003, 13.3. 1-13.3. 4, 2003
Band-edge high-performance high-k/metal gate n-MOSFETs using cap layers containing group IIA and IIIB elements with gate-first processing for 45 nm and beyond
TC Chen, G Shahidi, S Guha, M Ieong, MP Chudzik, R Jammy, ...
2006 Symposium on VLSI Technology, 2006. Digest of Technical Papers., 178-179, 2006
Impacts of NBTI and PBTI on SRAM static/dynamic noise margins and cell failure probability
A Bansal, R Rao, JJ Kim, S Zafar, JH Stathis, CT Chuang
Microelectronics reliability 49 (6), 642-649, 2009
CVD tantalum compounds for FET get electrodes
V Narayanan, F McFeely, K Milkove, J Yurkas, M Copel, P Jamison, ...
US Patent App. 10/712,575, 2005
Hydrogen-mediated model for defect metastability in hydrogenated amorphous silicon
S Zafar, EA Schiff
Physical Review B 40 (7), 5235, 1989
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