| Characterization of the Cu (In, Ga) Se2/Mo interface in CIGS solar cells T Wada, N Kohara, S Nishiwaki, T Negami Thin solid films 387 (1-2), 118-122, 2001 | 428 | 2001 |
| Electrical properties of the cu (in, ga) se2/MoSe2/mo structure N Kohara, S Nishiwaki, Y Hashimoto, T Negami, T Wada Solar Energy Materials and Solar Cells 67 (1-4), 209-215, 2001 | 245 | 2001 |
| Preparation of device-quality Cu (In, Ga) Se2 thin films deposited by coevaporation with composition monitor N Kohara, T Negami, M Nishitani, TWT Wada Japanese journal of applied physics 34 (9A), L1141, 1995 | 184 | 1995 |
| First principles calculations of defect formation in in-free photovoltaic semiconductors Cu2ZnSnS4 and Cu2ZnSnSe4 T Maeda, S Nakamura, T Wada Japanese Journal of Applied Physics 50 (4S), 04DP07, 2011 | 164 | 2011 |
| Dielectric and piezoelectric properties of (A0. 5Bi0. 5) TiO3–ANbO3 (A= Na, K) systems T Wada, K Toyoike, Y Imanaka, Y Matsuo Japanese Journal of Applied Physics 40 (9S), 5703, 2001 | 154 | 2001 |
| MoSe2 layer formation at Cu (In, Ga) Se2/Mo Interfaces in High Efficiency Cu (In1-xGa x) Se2 Solar Cells S Nishiwaki, N Kohara, T Negami, T Wada Japanese Journal of Applied Physics 37 (1A), L71, 1998 | 154 | 1998 |
| Preparation and characterization of Cu(In1−xGax)3Se5 thin films T Negami, N Kohara, M Nishitani, T Wada, T Hirao Applied Physics Letters 67 (6), 825-827, 1995 | 150 | 1995 |
| Semiconductor thin film, method for manufacturing the same, and solar cell using the same Y Hashimoto, T Negami, S Hayashi, T Wada US Patent 6,107,562, 2000 | 149 | 2000 |
| Control of the hole concentration in the YBa sub 2 Cu sub 3 O sub 6+ z-type superconductors (Yb, Ca)(Ba, Sr) sub 2 Cu sub 3 O sub 6+ z with low and high Ca contents T Wada, Y Yaegashi, A Ichinose, H Yamauchi, S Tanaka Physical Review, B: Condensed Matter;(United States) 44 (5), 1991 | 146 | 1991 |
| Chemical bath deposition of Cds buffer layer for GIGS solar cells Y Hashimoto, N Kohara, T Negami, N Nishitani, T Wada Solar Energy Materials and Solar Cells 50 (1-4), 71-77, 1998 | 137 | 1998 |
| Layered perovskite compounds Sr n+ 1 V n O 3 n+ 1 (n= 1, 2, 3, and∞) A Nozaki, H Yoshikawa, T Wada, H Yamauchi, S Tanaka Physical Review B 43 (1), 181, 1991 | 131 | 1991 |
| Ferroelectric NaNbO3 ceramics fabricated by spark plasma sintering T Wada, K Tsuji, T Saito, Y Matsuo Japanese journal of applied physics 42 (9S), 6110, 2003 | 130 | 2003 |
| Chemical and structural characterization of Cu (In, Ga) Se2/Mo interface in Cu (In, Ga) Se2 solar cells T Wada, N Kohara, TNT Negami, MNM Nishitani Japanese Journal of Applied Physics 35 (10A), L1253, 1996 | 130 | 1996 |
| Pulsed laser deposition of high-quality (K, Na) NbO3 thin films on SrTiO3 substrate using high-density ceramic targets T Saito, T Wada, H Adachi, I Kanno Japanese journal of applied physics 43 (9S), 6627, 2004 | 124 | 2004 |
| Method for preparing chalcopyrite-type compound T Wada, M Nishitani, T Negami US Patent 5,445,847, 1995 | 124 | 1995 |
| Phase stability and electronic structure of In-free photovoltaic materials: Cu2ZnSiSe4, Cu2ZnGeSe4, and Cu2ZnSnSe4 S Nakamura, T Maeda, T Wada Japanese Journal of Applied Physics 49 (12R), 121203, 2010 | 118 | 2010 |
| Crystallographic and optical properties of (Cu, Ag)2ZnSnS4 and (Cu, Ag)2ZnSnSe4 solid solutions W Gong, T Tabata, K Takei, M Morihama, T Maeda, T Wada physica status solidi (c) 12 (6), 700-703, 2015 | 115 | 2015 |
| Growth of CuInSe2 crystals in Cu-rich Cu–In–Se thin films T Wada, N Kohara, T Negami, M Nishitani Journal of Materials Research 12 (6), 1456-1462, 1997 | 112 | 1997 |
| Enhanced conductivity of zinc oxide thin films by ion implantation of hydrogen atoms S Kohiki, M Nishitani, T Wada, T Hirao Applied physics letters 64 (21), 2876-2878, 1994 | 110 | 1994 |
| Enhanced electrical conductivity of zinc oxide thin films by ion implantation of gallium, aluminum, and boron atoms S Kohiki, M Nishitani, T Wada Journal of applied physics 75 (4), 2069-2072, 1994 | 109 | 1994 |
