フォロー
Robin Materlik
Robin Materlik
確認したメール アドレス: hm.edu
タイトル
引用先
引用先
The origin of ferroelectricity in Hf1− xZrxO2: A computational investigation and a surface energy model
R Materlik, C Künneth, A Kersch
Journal of Applied Physics 117 (13), 2015
7302015
Stabilizing the ferroelectric phase in doped hafnium oxide
M Hoffmann, U Schroeder, T Schenk, T Shimizu, H Funakubo, O Sakata, ...
Journal of Applied Physics 118 (7), 2015
5192015
Strontium doped hafnium oxide thin films: Wide process window for ferroelectric memories
T Schenk, S Mueller, U Schroeder, R Materlik, A Kersch, M Popovici, ...
2013 Proceedings of the European Solid-State Device Research Conference …, 2013
1222013
Al-, Y-, and La-doping effects favoring intrinsic and field induced ferroelectricity in HfO2: A first principles study
R Materlik, C Künneth, M Falkowski, T Mikolajick, A Kersch
Journal of Applied Physics 123 (16), 2018
1132018
Impact of Four-Valent Doping on the Crystallographic Phase Formation for Ferroelectric HfO2 from First-Principles: Implications for Ferroelectric Memory and …
C Künneth, R Materlik, M Falkowski, A Kersch
ACS Applied Nano Materials 1 (1), 254-264, 2017
772017
Modeling ferroelectric film properties and size effects from tetragonal interlayer in Hf1–xZrxO2 grains
C Künneth, R Materlik, A Kersch
Journal of Applied Physics 121 (20), 2017
612017
The impact of charge compensated and uncompensated strontium defects on the stabilization of the ferroelectric phase in HfO2
R Materlik, C Künneth, T Mikolajick, A Kersch
Applied Physics Letters 111 (8), 2017
362017
Unexpectedly large energy variations from dopant interactions in ferroelectric HfO2 from high-throughput ab initio calculations
M Falkowski, C Künneth, R Materlik, A Kersch
npj Computational Materials 4 (1), 73, 2018
232018
2013 Proceedings of the European Solid-State Device Research Conference (ESSDERC)
T Schenk, S Mueller, U Schroeder, R Materlik, A Kersch, M Popovici, ...
IEEE, 2013
16*2013
Stabilization of ferroelectricity in Hafnia, zirconia and their mixtures by dopants and interface energy: First principles calculations and a phenomenological model
R Materlik
Technische Universität Dresden, 2019
82019
Doped hafnium oxide for ferroelectric memories
T Schenk, M Hoffmann, C Richter, M Pešić, S Mueller, S Slesazeck, ...
Materials Research Society Fall Meeting, 2015
52015
Searching for the Origin of the Ferroelectric Phase in HfO2
U Schroeder, T Schenk, C Richter, M Hoffmann, D Martin, T Shimizu, ...
ISAF Singapore Conf, 1-48, 2015
12015
Al-, Y-, and La-doping effects favoring intrinsic and field induced ferroelectricity in HfO₂
R Materlik, C Künneth, M Falkowski, T Mikolajick, A Kersch
2018
Stabilization of ferroelectric properties in Hafnia with doping
A Kersch, R Materlik, C Künneth, M Falkowski
High Performance Computing, 78, 2018
2018
Ab Initio Calculations Concerning the Phase Stabilization of Ferroelectric and Anti-Ferroelectric Zirconia Crystals with Dopants
R Materlik
Hochschule für Angewandte Wissenschaften München, 2013
2013
Strontium Doped Hafnium Oxide Thin Films
T Schenk, S Mueller, U Schroeder, R Materlik, A Kersch, M Popovici, ...
2) These two authors contributed equally to this work. 3) NaMLab gGmbH, Noethnitzer Strasse 64, 01187 Dresden, Germany 4) Chair of Nanoelectronic Materials, Technische …
R Materlik, C Künneth, T Mikolajick, A Kersch
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論文 1–17