フォロー
Geun Taek Yu
Geun Taek Yu
確認したメール アドレス: pusan.ac.kr
タイトル
引用先
引用先
Review of defect chemistry in fluorite-structure ferroelectrics for future electronic devices
MH Park, DH Lee, K Yang, JY Park, GT Yu, HW Park, M Materano, ...
Journal of Materials Chemistry C 8 (31), 10526-10550, 2020
1192020
Revival of ferroelectric memories based on emerging fluorite‐structured ferroelectrics
JY Park, DH Choe, DH Lee, GT Yu, K Yang, SH Kim, GH Park, SG Nam, ...
Advanced Materials 35 (43), 2204904, 2023
512023
Effect of residual impurities on polarization switching kinetics in atomic-layer-deposited ferroelectric Hf0. 5Zr0. 5O2 thin films
DH Lee, GT Yu, JY Park, SH Kim, K Yang, GH Park, JJ Ryu, JI Lee, ...
Acta Materialia 222, 117405, 2022
192022
Interfacial engineering of a Mo/Hf 0.3 Zr 0.7 O 2/Si capacitor using the direct scavenging effect of a thin Ti layer
SH Kim, GT Yu, GH Park, DH Lee, JY Park, K Yang, EB Lee, JI Lee, ...
Chemical Communications 57 (93), 12452-12455, 2021
192021
Engineering strategies in emerging fluorite-structured ferroelectrics
JY Park, DH Lee, K Yang, SH Kim, GT Yu, GH Park, EB Lee, KH Kim, ...
ACS Applied Electronic Materials 4 (4), 1369-1380, 2021
162021
Wake-up-mitigated giant ferroelectricity in Hf0. 5Zr0. 5O2 thin films through oxygen-providing, surface-oxidized W electrode
K Yang, GY Kim, JJ Ryu, DH Lee, JY Park, SH Kim, GH Park, GT Yu, ...
Materials Science in Semiconductor Processing 164, 107565, 2023
82023
Energy conversion and storage using artificially induced antiferroelectricity in HfO2/ZrO2 nanolaminates
K Yang, EB Lee, DH Lee, JY Park, SH Kim, GH Park, GT Yu, JI Lee, ...
Composites Part B: Engineering 236, 109824, 2022
72022
Revival of Ferroelectric Memories Based on Emerging Fluorite‐Structured Ferroelectrics (Adv. Mater. 43/2023)
JY Park, DH Choe, DH Lee, GT Yu, K Yang, SH Kim, GH Park, SG Nam, ...
Advanced Materials 35 (43), 2370312, 2023
12023
Effect of residual impurities on polarization switching kinetics in atomic-layer-deposited ferroelectric Hf0. 5Zr0. 5O2 thin films (vol 222, 117405, 2022)
DH Lee, GT Yu, JY Park, SH Kim, K Yang, GH Park, JJ Ryu, JI Lee, ...
ACTA MATERIALIA 247, 2023
2023
Corrigendum to’Effect of residual impurities on polarization switching kinetics in atomic-layer-deposited ferroelectric Hf0. 5Zr0. 5O2 thin films’[Acta Materialia 222 (2022 …
DH Lee, GT Yu, JY Park, SH Kim, K Yang, GH Park, JJ Ryu, JI Lee, ...
Acta Materialia 247, 118732, 2023
2023
Correction: Interfacial engineering of a Mo/Hf 0.3 Zr 0.7 O 2/Si capacitor using the direct scavenging effect of a thin Ti layer
SH Kim, GT Yu, GH Park, DH Lee, JY Park, K Yang, EB Lee, JI Lee, ...
Chemical Communications 59 (18), 2668-2668, 2023
2023
Review of the mechanism for Ferroelectric Phase Formation in Fluorite-structure Oxide
GT Yu, GH Park, EB Lee, MH Park
New Physics: Sae Mulli 71 (11), 890-900, 2021
2021
A Brief Review on the Ferroelectric Fluorite-Structured Nanolaminate
K Yang, JY Park, DH Lee, SH Kim, GT Yu, GH Park, EB Lee, JI Lee, ...
Korean Journal of Metals and Materials 59 (12), 849-856, 2021
2021
New Physics: Sae Mulli
GT YU, GH PARK, EB LEE, MH PARK, W SHIN, H OH, S JUNG, GH KIM, ...
2021
Interfacial engineering of a Mo/Hf₀. ₃Zr₀. ₇O₂/Si capacitor using the direct scavenging effect of a thin Ti layer
SH Kim, GT Yu, GH Park, DH Lee, JY Park, K Yang, EB Lee, JI Lee, ...
2021
A Brief Review on Polarization Switching Kinetics in Fluorite-structured Ferroelectrics
SH Kim, KH Park, EB Lee, GT Yu, DH Lee, K Yang, JY Park, MH Park
Journal of the Korean institute of surface engineering 53 (6), 330-342, 2020
2020
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