An industry-based survey of reliability in power electronic converters S Yang, A Bryant, P Mawby, D Xiang, L Ran, P Tavner IEEE transactions on Industry Applications 47 (3), 1441-1451, 2011 | 2126 | 2011 |
Condition monitoring for device reliability in power electronic converters: A review S Yang, D Xiang, A Bryant, P Mawby, L Ran, P Tavner IEEE transactions on power electronics 25 (11), 2734-2752, 2010 | 1297 | 2010 |
A lifetime estimation technique for voltage source inverters H Huang, PA Mawby IEEE Transactions on Power Electronics 28 (8), 4113-4119, 2012 | 408 | 2012 |
Investigation into IGBT dV/dt during turn-off and its temperature dependence A Bryant, S Yang, P Mawby, D Xiang, L Ran, P Tavner, PR Palmer IEEE Transactions on Power Electronics 26 (10), 3019-3031, 2011 | 243 | 2011 |
Monitoring solder fatigue in a power module using case-above-ambient temperature rise D Xiang, L Ran, P Tavner, A Bryant, S Yang, P Mawby IEEE Transactions on Industry Applications 47 (6), 2578-2591, 2011 | 217 | 2011 |
Theory of a novel voltage-sustaining layer for power devices XB Chen, PA Mawby, K Board, CAT Salama Microelectronics journal 29 (12), 1005-1011, 1998 | 198 | 1998 |
Exploration of power device reliability using compact device models and fast electrothermal simulation AT Bryant, PA Mawby, PR Palmer, E Santi, JL Hudgins IEEE transactions on industry applications 44 (3), 894-903, 2008 | 183 | 2008 |
Condition monitoring power module solder fatigue using inverter harmonic identification D Xiang, L Ran, P Tavner, S Yang, A Bryant, P Mawby IEEE Transactions on Power Electronics 27 (1), 235-247, 2011 | 174 | 2011 |
Failure and reliability analysis of a SiC power module based on stress comparison to a Si device B Hu, JO Gonzalez, L Ran, H Ren, Z Zeng, W Lai, B Gao, O Alatise, H Lu, ... IEEE Transactions on device and materials reliability 17 (4), 727-737, 2017 | 161 | 2017 |
Temperature and switching rate dependence of crosstalk in Si-IGBT and SiC power modules S Jahdi, O Alatise, JAO Gonzalez, R Bonyadi, L Ran, P Mawby IEEE Transactions on Industrial Electronics 63 (2), 849-863, 2015 | 152 | 2015 |
Field-effect mobility temperature modeling of 4H-SiC metal-oxide-semiconductor transistors A Pérez-Tomás, P Brosselard, P Godignon, J Millán, N Mestres, ... Journal of applied physics 100 (11), 2006 | 145 | 2006 |
LowStress Cycle Effect in IGBT Power Module Die-Attach Lifetime Modeling W Lai, M Chen, L Ran, O Alatise, S Xu, P Mawby IEEE Transactions on Power Electronics 31 (9), 6575-6585, 2015 | 140 | 2015 |
An investigation of temperature-sensitive electrical parameters for SiC power MOSFETs JO Gonzalez, O Alatise, J Hu, L Ran, PA Mawby IEEE Transactions on Power Electronics 32 (10), 7954-7966, 2016 | 118 | 2016 |
An analysis of the switching performance and robustness of power MOSFETs body diodes: A technology evaluation S Jahdi, O Alatise, R Bonyadi, P Alexakis, CA Fisher, JAO Gonzalez, ... IEEE Transactions on Power Electronics 30 (5), 2383-2394, 2014 | 110 | 2014 |
Experimental investigation on the effects of narrow junction temperature cycles on die-attach solder layer in an IGBT module W Lai, M Chen, L Ran, S Xu, N Jiang, X Wang, O Alatise, P Mawby IEEE Transactions on Power Electronics 32 (2), 1431-1441, 2016 | 109 | 2016 |
A fast loss and temperature simulation method for power converters, part II: 3-D thermal model of power module I Swan, A Bryant, PA Mawby, T Ueta, T Nishijima, K Hamada IEEE Transactions on Power Electronics 27 (1), 258-268, 2011 | 97 | 2011 |
Modelling the inhomogeneous SiC Schottky interface PM Gammon, A Pérez-Tomás, VA Shah, O Vavasour, E Donchev, ... Journal of Applied Physics 114 (22), 2013 | 93 | 2013 |
Robustness and balancing of parallel-connected power devices: SiC versus CoolMOS J Hu, O Alatise, JAO Gonzalez, R Bonyadi, P Alexakis, L Ran, P Mawby IEEE Transactions on Industrial Electronics 63 (4), 2092-2102, 2015 | 87 | 2015 |
Capacitor selection for modular multilevel converter Y Tang, L Ran, O Alatise, P Mawby IEEE Transactions on Industry Applications 52 (4), 3279-3293, 2016 | 85 | 2016 |
The effect of electrothermal nonuniformities on parallel connected SiC power devices under unclamped and clamped inductive switching J Hu, O Alatise, JAO Gonzalez, R Bonyadi, L Ran, PA Mawby IEEE Transactions on Power Electronics 31 (6), 4526-4535, 2015 | 85 | 2015 |