Matt Copel
Matt Copel
IBM TJ Watson Research Center
確認したメール アドレス: us.ibm.com - ホームページ
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引用先
Surfactants in epitaxial growth
M Copel, MC Reuter, E Kaxiras, RM Tromp
Physical review letters 63 (6), 632, 1989
13001989
Structure and stability of ultrathin zirconium oxide layers on Si (001)
M Copel, M Gribelyuk, E Gusev
Applied Physics Letters 76 (4), 436-438, 2000
8812000
High-mobility ultrathin semiconducting films prepared by spin coating
DB Mitzi, LL Kosbar, CE Murray, M Copel, A Afzali
Nature 428 (6980), 299-303, 2004
5212004
High-resolution depth profiling in ultrathin films on Si
EP Gusev, M Copel, E Cartier, IJR Baumvol, C Krug, MA Gribelyuk
Applied Physics Letters 76 (2), 176-178, 2000
4772000
Ultrathin high-K metal oxides on silicon: processing, characterization and integration issues
EP Gusev, E Cartier, DA Buchanan, M Gribelyuk, M Copel, ...
Microelectronic Engineering 59 (1-4), 341-349, 2001
4522001
Atomic beam deposition of lanthanum-and yttrium-based oxide thin films for gate dielectrics
S Guha, E Cartier, MA Gribelyuk, NA Bojarczuk, MC Copel
Applied Physics Letters 77 (17), 2710-2712, 2000
4152000
Influence of surfactants in Ge and Si epitaxy on Si (001)
M Copel, MC Reuter, MH Von Hoegen, RM Tromp
Physical Review B 42 (18), 11682, 1990
409*1990
Ultrathin high-K gate stacks for advanced CMOS devices
EP Gusev, DA Buchanan, E Cartier, A Kumar, D DiMaria, S Guha, ...
International Electron Devices Meeting. Technical Digest (Cat. No. 01CH37224 …, 2001
3692001
Ultrathin high-K gate stacks for advanced CMOS devices
EP Gusev, DA Buchanan, E Cartier, A Kumar, D DiMaria, S Guha, ...
International Electron Devices Meeting. Technical Digest (Cat. No. 01CH37224 …, 2001
3692001
Ultrathin HfO2 films grown on silicon by atomic layer deposition for advanced gate dielectrics applications
EP Gusev, C Cabral Jr, M Copel, C D’emic, M Gribelyuk
Microelectronic Engineering 69 (2-4), 145-151, 2003
3112003
Defect self-annihilation in surfactant-mediated epitaxial growth
M Horn-von Hoegen, FK LeGoues, M Copel, MC Reuter, RM Tromp
Physical review letters 67 (9), 1130, 1991
3061991
Formation of a stratified lanthanum silicate dielectric by reaction with Si (001)
M Copel, E Cartier, FM Ross
Applied Physics Letters 78 (11), 1607-1609, 2001
2912001
Band alignment at the interface
R Haight, A Barkhouse, O Gunawan, B Shin, M Copel, M Hopstaken, ...
Applied Physics Letters 98 (25), 253502, 2011
2582011
Microstructure and strain relief of Ge films grown layer by layer on Si (001)
FK LeGoues, M Copel, RM Tromp
Physical Review B 42 (18), 11690, 1990
2281990
Structure of Au (110) determined with medium-energy-ion scattering
M Copel, T Gustafsson
Physical review letters 57 (6), 723, 1986
1861986
80 nm polysilicon gated n-FETs with ultra-thin Al/sub 2/O/sub 3/gate dielectric for ULSI applications
DA Buchanan, EP Gusev, E Cartier, H Okorn-Schmidt, K Rim, ...
International Electron Devices Meeting 2000. Technical Digest. IEDM (Cat. No …, 2000
1722000
H coverage dependence of Si (001) homoepitaxy
M Copel, RM Tromp
Physical review letters 72 (8), 1236, 1994
1651994
Robustness of ultrathin aluminum oxide dielectrics on Si (001)
M Copel, E Cartier, EP Gusev, S Guha, N Bojarczuk, M Poppeller
Applied Physics Letters 78 (18), 2670-2672, 2001
1632001
Hafnium oxide gate dielectrics on sulfur-passivated germanium
MM Frank, SJ Koester, M Copel, JA Ott, VK Paruchuri, H Shang, ...
Applied Physics Letters 89 (11), 112905, 2006
1602006
Growth temperature dependence of interfacial abruptness in Si/Ge heteroepitaxy studied by Raman spectroscopy and medium energy ion scattering
SS Iyer, JC Tsang, MW Copel, PR Pukite, RM Tromp
Applied physics letters 54 (3), 219-221, 1989
1601989
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