Enrico Zanoni
Enrico Zanoni
Professor, Electronics, University of Padova
確認したメール アドレス: dei.unipd.it
タイトル引用先
Flash memory cells-an overview
P Pavan, R Bez, P Olivo, E Zanoni
Proceedings of the IEEE 85 (8), 1248-1271, 1997
9151997
Reliability of GaN high-electron-mobility transistors: State of the art and perspectives
G Meneghesso, G Verzellesi, F Danesin, F Rampazzo, F Zanon, A Tazzoli, ...
IEEE Transactions on Device and Materials Reliability 8 (2), 332-343, 2008
5352008
Flash memories
P Cappelletti, C Golla, P Olivo, E Zanoni
Springer Science & Business Media, 2013
3852013
Surface-related drain current dispersion effects in AlGaN-GaN HEMTs
G Meneghesso, G Verzellesi, R Pierobon, F Rampazzo, A Chini, ...
IEEE Transactions on Electron Devices 51 (10), 1554-1561, 2004
3222004
Efficiency droop in InGaN/GaN blue light-emitting diodes: Physical mechanisms and remedies
G Verzellesi, D Saguatti, M Meneghini, F Bertazzi, M Goano, ...
Journal of Applied Physics 114 (7), 10_1, 2013
3072013
A review on the reliability of GaN-based LEDs
M Meneghini, LR Trevisanello, G Meneghesso, E Zanoni
IEEE Transactions on Device and Materials Reliability 8 (2), 323-331, 2008
2602008
A review on the physical mechanisms that limit the reliability of GaN-based LEDs
M Meneghini, A Tazzoli, G Mura, G Meneghesso, E Zanoni
IEEE Transactions on Electron Devices 57 (1), 108-118, 2009
2422009
Richardson’s constant in inhomogeneous silicon carbide Schottky contacts
F Roccaforte, F La Via, V Raineri, R Pierobon, E Zanoni
Journal of applied Physics 93 (11), 9137-9144, 2003
2252003
Deep-level characterization in GaN HEMTs-Part I: Advantages and limitations of drain current transient measurements
D Bisi, M Meneghini, C De Santi, A Chini, M Dammann, P Brueckner, ...
IEEE Transactions on electron devices 60 (10), 3166-3175, 2013
2092013
The 2018 GaN power electronics roadmap
H Amano, Y Baines, E Beam, M Borga, T Bouchet, PR Chalker, M Charles, ...
Journal of Physics D: Applied Physics 51 (16), 163001, 2018
1942018
Accelerated life test of high brightness light emitting diodes
L Trevisanello, M Meneghini, G Mura, M Vanzi, M Pavesi, G Meneghesso, ...
IEEE Transactions on Device and Materials Reliability 8 (2), 304-311, 2008
1772008
Current collapse and high-electric-field reliability of unpassivated GaN/AlGaN/GaN HEMTs
G Meneghesso, F Rampazzo, P Kordos, G Verzellesi, E Zanoni
IEEE Transactions on Electron Devices 53 (12), 2932-2941, 2006
1582006
A fully electronic sensor for the measurement of cDNA hybridization kinetics
L Bandiera, G Cellere, S Cagnin, A De Toni, E Zanoni, G Lanfranchi, ...
Biosensors and Bioelectronics 22 (9-10), 2108-2114, 2007
1322007
Investigation of high-electric-field degradation effects in AlGaN/GaN HEMTs
M Faqir, G Verzellesi, G Meneghesso, E Zanoni, F Fantini
IEEE Transactions on Electron Devices 55 (7), 1592-1602, 2008
1292008
Towards 10 Gb/s orthogonal frequency division multiplexing-based visible light communication using a GaN violet micro-LED
MS Islim, RX Ferreira, X He, E Xie, S Videv, S Viola, S Watson, ...
Photonics Research 5 (2), A35-A43, 2017
1192017
Time-dependent degradation of AlGaN/GaN high electron mobility transistors under reverse bias
M Meneghini, A Stocco, M Bertin, D Marcon, A Chini, G Meneghesso, ...
Applied Physics Letters 100 (3), 033505, 2012
1182012
A combined electro-optical method for the determination of the recombination parameters in InGaN-based light-emitting diodes
M Meneghini, N Trivellin, G Meneghesso, E Zanoni, U Zehnder, B Hahn
Journal of Applied Physics 106 (11), 114508, 2009
1152009
Investigation of trapping and hot-electron effects in GaN HEMTs by means of a combined electrooptical method
M Meneghini, N Ronchi, A Stocco, G Meneghesso, UK Mishra, Y Pei, ...
IEEE Transactions on electron devices 58 (9), 2996-3003, 2011
1072011
Mechanisms of RF current collapse in AlGaN–GaN high electron mobility transistors
M Faqir, G Verzellesi, A Chini, F Fantini, F Danesin, G Meneghesso, ...
IEEE Transactions on Device and Materials Reliability 8 (2), 240-247, 2008
1062008
AlGaN/GaN-based HEMTs failure physics and reliability: Mechanisms affecting gate edge and Schottky junction
E Zanoni, M Meneghini, A Chini, D Marcon, G Meneghesso
IEEE transactions on electron devices 60 (10), 3119-3131, 2013
1052013
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