Inverse Resistance Change Cr2Ge2Te6-Based PCRAM Enabling Ultralow-Energy Amorphization S Hatayama, Y Sutou, S Shindo, Y Saito, YH Song, D Ando, J Koike ACS applied materials & interfaces 10 (3), 2725-2734, 2018 | 94 | 2018 |
Contact resistivity of amorphous and crystalline GeCu2Te3 to W electrode for phase change random access memory S Shindo, Y Sutou, J Koike, Y Saito, YH Song Materials Science in Semiconductor Processing 47, 1-6, 2016 | 31 | 2016 |
Contact resistance change memory using N-doped Cr2Ge2Te6 phase-change material showing non-bulk resistance change Y Shuang, Y Sutou, S Hatayama, S Shindo, YH Song, D Ando, J Koike Applied Physics Letters 112 (18), 2018 | 29 | 2018 |
Cr-Triggered Local Structural Change in Cr2Ge2Te6 Phase Change Material S Hatayama, Y Shuang, P Fons, Y Saito, AV Kolobov, K Kobayashi, ... ACS applied materials & interfaces 11 (46), 43320-43329, 2019 | 28 | 2019 |
Electronic Structure of Transition-Metal Based Cu2GeTe3 Phase Change Material: Revealing the Key Role of Cu d Electrons Y Saito, Y Sutou, P Fons, S Shindo, X Kozina, JM Skelton, AV Kolobov, ... Chemistry of Materials 29 (17), 7440-7449, 2017 | 26 | 2017 |
Understanding the fast phase-change mechanism of tetrahedrally bonded : Comprehensive analyses of electronic structure and transport phenomena K Kobayashi, JM Skelton, Y Saito, S Shindo, M Kobata, P Fons, ... Physical Review B 97 (19), 195105, 2018 | 13 | 2018 |
Systematic materials design for phase-change memory with small density changes for high-endurance non-volatile memory applications Y Saito, S Hatayama, Y Shuang, S Shindo, P Fons, AV Kolobov, ... Applied Physics Express 12 (5), 051008, 2019 | 11 | 2019 |
The importance of contacts in Cu2GeTe3 phase change memory devices S Shindo, Y Shuang, S Hatayama, Y Saito, P Fons, AV Kolobov, ... Journal of Applied Physics 128 (16), 2020 | 10 | 2020 |
Molybdenum oxide-base phase change resistive switching material Y Ogawa, S Shindo, Y Sutou, J Koike Applied Physics Letters 111 (16), 2017 | 9 | 2017 |
XAFS analysis on amorphous and crystalline new phase change material GeCu2Te3 K Kamimura, S Hosokawa, N Happo, H Ikemoto, Y Sutou, S Shindo, ... Journal of Optoelectronics and Advanced Materials 18 (March-April 2016), 248-253, 2016 | 7 | 2016 |
XAFS Analysis of Crystal GeCu2Te3 Phase Change Material K Kamimura, K Kimura, S Hosokawa, N Happo, H Ikemoto, Y Sutou, ... Zeitschrift für Physikalische Chemie 230 (3), 433-443, 2016 | 5 | 2016 |
Observation of ultrafast amorphization dynamics in GeCu2Te3 thin films using echelon-based single-shot transient absorbance spectroscopy Y Arashida, T Suzuki, S Nara, I Katayama, Y Minami, S Shindo, Y Sutou, ... Applied Physics Letters 119 (6), 2021 | 3 | 2021 |
Investigation of bias polarity dependence of set operation in GeCu2Te3 phase change memory JS An, KJ Kim, CM Choi, S Shindo, Y Sutou, YH Song Electronics Letters 54 (6), 350-351, 2018 | 3 | 2018 |
Impact of contact resistance on memory window in phase-change random access memory (PCRAM) J An, C Choi, S Shindo, Y Sutou, Y Kwon, Y Song Journal of Computational Electronics 15, 1570-1576, 2016 | 3 | 2016 |
Effect of surface cleaning on contact resistivity of amorphous GeCu2Te3 to a W electrode S Shindo, Y Sutou, J Koike, Y Saito, YH Song MRS Advances 1 (39), 2731-2736, 2016 | 3 | 2016 |
Implementation of pulse timing discriminator functionality into a GeSbTe/GeCuTe double layer structure R Akimoto, H Handa, S Shindo, Y Sutou, M Kuwahara, M Naruse, T Saiki Optics Express 25 (22), 26825-26831, 2017 | 2 | 2017 |
Chronological change of electrical resistance in GeCu2Te3 amorphous film induced by surface oxidation Y Saito, S Shindo, Y Sutou, J Koike Journal of Physics D: Applied Physics 47 (47), 475302, 2014 | 2 | 2014 |
Contact resistance change memory with N-doped Cr2Ge2Te6 phase change material YI SHUANG, Y Sutou, S Hatayama, S Shindo, S Yunheub, D Ando, ... JSAP Annual Meetings Extended Abstracts The 66th JSAP Spring Meeting 2019 …, 2019 | | 2019 |
Cr-Triggered Local Structural Change in Cr₂Ge₂Te₆ Phase Change Material S Hatayama, Y Shuang, P Fons, Y Saito, AV Kolobov, K Kobayashi, ... ACS applied materials & interfaces 11 (46), 2019 | | 2019 |
narrowing window JS An, K Kim, CM Choi, S Shindo, Y Sutou, YH Song ELECTRONICS LETTERS 54 (6), 332, 2018 | | 2018 |