フォロー
Tokuo Yodo
Tokuo Yodo
Osaka Institute of Technology
確認したメール アドレス: oit.ac.jp
タイトル
引用先
引用先
Strong band edge luminescence from InN films grown on Si substrates by electron cyclotron resonance-assisted molecular beam epitaxy
T Yodo, H Yona, H Ando, D Nosei, Y Harada
Applied physics letters 80 (6), 968-970, 2002
1042002
Buffer-enhanced room-temperature growth and characterization of epitaxial ZnO thin films
A Sasaki, W Hara, A Matsuda, N Tateda, S Otaka, S Akiba, K Saito, ...
Applied Physics Letters 86 (23), 2005
842005
Lattice-mismatch effects on properties in ZnSe layer grown on GaAs substrate by low pressure OMVPE
S Fujita, T Yodo, A Sasaki
Journal of Crystal Growth 72 (1-2), 27-30, 1985
551985
Growth and characterization of GaSe and GaAs/GaSe on As‐passivated Si (111) substrates
JE Palmer, T Saitoh, T Yodo, M Tamura
Journal of applied physics 74 (12), 7211-7222, 1993
481993
Growth of high-quality ZnSe by MOVPE on (100) ZnSe substrate
T Yodo, T Koyama, K Yamashita
Journal of Crystal Growth 86 (1-4), 273-278, 1988
341988
Growth and characterization of GaAs/GaSe/Si heterostructures
JE Palmer, T Saitoh, TYT Yodo, MTM Tamura
Japanese journal of applied physics 32 (8B), L1126, 1993
321993
Growth of ZnSe single crystals by iodine transport
T Koyama, T Yodo, H Oka, K Yamashita, T Yamasaki
Journal of crystal growth 91 (4), 639-646, 1988
321988
Growth and Characterization of InN Heteroepitaxial Layers Grown on Si Substrates by ECR‐Assisted MBE
T Yodo, H Ando, D Nosei, Y Harada
physica status solidi (b) 228 (1), 21-26, 2001
312001
Reactor pressure dependence of properties of undoped ZnSe grown by low-pressure omvpe
S Fujita, T Yodo, Y Matsuda, A Sasaki
Journal of crystal growth 71 (1), 169-172, 1985
281985
Relationship between the optical and structural properties in GaAs heteroepitaxial layers grown on Si substrates
T Yodo, M Tamura, T Saitoh
Journal of crystal growth 141 (3-4), 331-342, 1994
261994
High‐quality epitaxial growth of ZnSe on (100) ZnSe by atmospheric pressure metalorganic vapor phase epitaxy
T Yodo, T Koyama, K Yamashita
Journal of applied physics 64 (5), 2403-2407, 1988
261988
Epitaxial growth of high quality ZnSe on GaAs substrate by atmospheric pressure MOVPE using dimethylzinc and hydrogen selenide
T Yodo, H Oka, T Koyama, K Yamashita
Japanese journal of applied physics 26 (5A), L561, 1987
261987
Facile preparation of YAG: Ce nanoparticles by laser irradiation in water and their optical properties
N Tsuruoka, T Sasagawa, T Yodo, M Yoshimoto, O Odawara, H Wada
SpringerPlus 5, 1-7, 2016
252016
Double acceptor bound exciton in Ge
H Nakata, T Yodo, E Otsuka
Solid State Communications 45 (2), 55-57, 1983
231983
Damage due to nitrogen molecular ions of GaN heteroepitaxial layers grown on Si (001) substrates by molecular beam epitaxy assisted by electron cyclotron resonance
T Yodo, H Tsuchiya, H Ando, Y Harada
Japanese Journal of Applied Physics 39 (5R), 2523, 2000
222000
GaAs on Si (111) with a layered structure GaSe buffer layer
JE Palmer, T Saitoh, T Yodo, M Tamura
Journal of crystal growth 150, 685-690, 1995
221995
Strain-free, ultra-high purity ZnSe layers grown by molecular beam epitaxy
RM Park, CM Rouleau, MB Troffer, T Koyama, T Yodo
Journal of Materials Research 5, 475-477, 1990
221990
Growth of CdS by atmospheric pressure metalorganic vapor‐phase epitaxy at low temperature
T Yodo, S Tanaka
Journal of applied physics 72 (7), 2781-2790, 1992
211992
Thermal stability of ZnSe epilayer grown by MOVPE
T Yodo, K Yamashita
Journal of Crystal Growth 93 (1-4), 656-661, 1988
211988
Growth of GaSe on As-passivated Si (111) substrates
JE Palmer, T Saitoh, T Yodo, M Tamura
Journal of crystal growth 147 (3-4), 283-291, 1995
201995
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論文 1–20