| Two-dimensional photonic crystal confined vertical-cavity surface-emitting lasers N Yokouchi, AJ Danner, KD Choquette IEEE Journal of Selected Topics in Quantum Electronics 9 (5), 1439-1445, 2003 | 180 | 2003 |
| Etching depth dependence of the effective refractive index in two-dimensional photonic-crystal-patterned vertical-cavity surface-emitting laser structures N Yokouchi, AJ Danner, KD Choquette Applied Physics Letters 82 (9), 1344-1346, 2003 | 111 | 2003 |
| Continuous-wave operation up to 36/spl deg/C of 1.3-μm GaInAsP-InP vertical-cavity surface-emitting lasers S Uchiyama, N Yokouchi, T Ninomiya IEEE Photonics Technology Letters 9 (2), 141-142, 1997 | 90 | 1997 |
| Transverse modes of photonic crystal vertical-cavity lasers AJ Danner, JJ Raftery Jr, N Yokouchi, KD Choquette Applied Physics Letters 84 (7), 1031-1033, 2004 | 80 | 2004 |
| Coupled-defect photonic crystal vertical cavity surface emitting lasers AJ Danner, JC Lee, JJ Raftery, N Yokouchi, KD Choquette Electron. Lett 39 (18), 1323-1324, 2003 | 71 | 2003 |
| 40 Å continuous tuning of a GaInAsP/InP vertical-cavity surface-emitting laser using an external mirror N Yokouchi, T Miyamoto, T Uchida, Y Inaba, F Koyama, K Iga IEEE photonics technology letters 4 (7), 701-703, 1992 | 70 | 1992 |
| Vertical-cavity surface-emitting laser operating with photonic crystal seven-point defect structure N Yokouchi, AJ Danner, KD Choquette Applied physics letters 82 (21), 3608-3610, 2003 | 59 | 2003 |
| Various low group velocity effects in photonic crystal line defect waveguides and their demonstration by laser oscillation K Kiyota, T Kise, N Yokouchi, T Ide, T Baba Applied physics letters 88 (20), 2006 | 51 | 2006 |
| CBE grown 1.5 mu m GaInAsP-InP surface emitting lasers T Uchida, T Miyamoto, N Yokouchi, Y Inaba, F Koyama, K Iga IEEE journal of quantum electronics 29 (6), 1975-1980, 1993 | 41 | 1993 |
| InAs quantum dot lasers with extremely low threshold current density (7 A/cm2/layer) H Shimizu, S Saravanan, J Yoshida, S Ibe, N Yokouchi Japanese journal of applied physics 44 (8L), L1103, 2005 | 39 | 2005 |
| Photonic crystal single transverse mode defect structure for vertical cavity surface emitting laser KD Choquette, N Yokouchi US Patent 7,085,301, 2006 | 38 | 2006 |
| Output beam characteristics of 1.3 micron GaInAsP/InP SL-QW lasers with narrow and circular output beam A Kasukawa, N Iwai, N Yamanaka, N Yokouchi Electronics Letters 31 (7), 559-560, 1995 | 35 | 1995 |
| Vertical cavity surface emitting laser device N Yokouchi, M Tachibana, N Ueda, T Shinagawa US Patent 6,700,914, 2004 | 31 | 2004 |
| Vertical cavity surface emitting semiconductor laser device T Shinagawa, N Iwai, N Yokouchi US Patent 6,914,925, 2005 | 26 | 2005 |
| Surface emitting laser device N Iwai, N Yokouchi US Patent App. 10/151,201, 2003 | 26 | 2003 |
| Tensile-strained GaInAsP-InP quantum-well lasers emitting at 1.3/spl mu/m N Yokouchi, N Yamanaka, N Iwai, Y Nakahira, A Kasukawa IEEE journal of quantum electronics 32 (12), 2148-2155, 1996 | 24 | 1996 |
| Surface emitting lasers grown by chemical beam epitaxy T Miyamoto, T Uchida, N Yokouchi, K Iga Journal of crystal growth 136 (1-4), 210-215, 1994 | 22 | 1994 |
| Very low threshold current density 1.3 μm InAsP/InP/InGaP/InP/GaInAsP strain-compensated multiple quantum well lasers A Kasukawa, N Yokouchi, N Yamanaka, N Iwai Compound Semiconductors 1995, Proceedings of the Twenty-Second INT Symposium …, 2020 | 18 | 2020 |
| Optical integrated circuit and optical integrated circuit module M Funabashi, J Hasegawa, T Akutsu, K Nara, N Yokouchi US Patent 7,561,765, 2009 | 18 | 2009 |
| InAsP/InGaP all-ternary strain-compensated multiple quantum wells and their application to long-wavelength lasers A Kasukawa, N Yokouchi, N Yamanaka, N Iwai, TMT Matsuda Japanese journal of applied physics 34 (8A), L965, 1995 | 16 | 1995 |
Fumio KoyamaTokyo Institute of Technology確認したメール アドレス: pi.titech.ac.jp
