Noriyuki Yokouchi
Noriyuki Yokouchi
所属不明
確認したメール アドレス: furukawaelectric.com
タイトル
引用先
引用先
Two-dimensional photonic crystal confined vertical-cavity surface-emitting lasers
N Yokouchi, AJ Danner, KD Choquette
IEEE Journal of Selected Topics in Quantum Electronics 9 (5), 1439-1445, 2003
1742003
Etching depth dependence of the effective refractive index in two-dimensional photonic-crystal-patterned vertical-cavity surface-emitting laser structures
N Yokouchi, AJ Danner, KD Choquette
Applied Physics Letters 82 (9), 1344-1346, 2003
972003
Continuous-wave operation up to 36/spl deg/C of 1.3-μm GaInAsP-InP vertical-cavity surface-emitting lasers
S Uchiyama, N Yokouchi, T Ninomiya
IEEE Photonics Technology Letters 9 (2), 141-142, 1997
821997
Transverse modes of photonic crystal vertical-cavity lasers
AJ Danner, JJ Raftery Jr, N Yokouchi, KD Choquette
Applied Physics Letters 84 (7), 1031-1033, 2004
752004
Coupled-defect photonic crystal vertical cavity surface emitting lasers
AJ Danner, JC Lee, JJ Raftery, N Yokouchi, KD Choquette
Electronics Letters 39 (18), 1323-1324, 2003
702003
40 Å continuous tuning of a GaInAsP/InP vertical-cavity surface-emitting laser using an external mirror
N Yokouchi, T Miyamoto, T Uchida, Y Inaba, F Koyama, K Iga
IEEE photonics technology letters 4 (7), 701-703, 1992
661992
Vertical-cavity surface-emitting laser operating with photonic crystal seven-point defect structure
N Yokouchi, AJ Danner, KD Choquette
Applied physics letters 82 (21), 3608-3610, 2003
592003
Various low group velocity effects in photonic crystal line defect waveguides and their demonstration by laser oscillation
K Kiyota, T Kise, N Yokouchi, T Ide, T Baba
Applied physics letters 88 (20), 201904, 2006
472006
CBE grown 1.5 mu m GaInAsP-InP surface emitting lasers
T Uchida, T Miyamoto, N Yokouchi, Y Inaba, F Koyama, K Iga
IEEE journal of quantum electronics 29 (6), 1975-1980, 1993
401993
InAs quantum dot lasers with extremely low threshold current density (7 A/cm2/layer)
H Shimizu, S Saravanan, J Yoshida, S Ibe, N Yokouchi
Japanese journal of applied physics 44 (8L), L1103, 2005
372005
Output beam characteristics of 1.3 mu m GaInAsP/InP SL-QW lasers with narrow and circular output beam
A Kasukawa, N Iwai, N Yamanaka, N Yokouchi
Electronics Letters 31 (7), 559-560, 1995
331995
Photonic crystal single transverse mode defect structure for vertical cavity surface emitting laser
KD Choquette, N Yokouchi
US Patent 7,085,301, 2006
322006
Vertical cavity surface emitting laser device
N Yokouchi, M Tachibana, N Ueda, T Shinagawa
US Patent 6,700,914, 2004
312004
Vertical cavity surface emitting semiconductor laser device
T Shinagawa, N Iwai, N Yokouchi
US Patent 6,914,925, 2005
252005
Surface emitting laser device
N Iwai, N Yokouchi
US Patent App. 10/151,201, 2003
252003
Tensile-strained GaInAsP-InP quantum-well lasers emitting at 1.3/spl mu/m
N Yokouchi, N Yamanaka, N Iwai, Y Nakahira, A Kasukawa
IEEE journal of quantum electronics 32 (12), 2148-2155, 1996
211996
Very low threshold current density 1.3/spl mu/m InAsP/InP/InGaP/InP/GaInAsP strain-compensated multiple quantum well lasers
A Kasukawa, N Yokouchi, N Yamanaka, N Iwai
Electronics Letters 31 (20), 1749-1750, 1995
211995
Surface emitting lasers grown by chemical beam epitaxy
T Miyamoto, T Uchida, N Yokouchi, K Iga
Journal of crystal growth 136 (1-4), 210-215, 1994
181994
InAsP/InGaP all-ternary strain-compensated multiple quantum wells and their application to long-wavelength lasers
A Kasukawa, N Yokouchi, N Yamanaka, N Iwai, T Matsuda
Japanese journal of applied physics 34 (8A), L965, 1995
171995
Estimation of tunable wavelength range in surface emitting laser using intra-cavity quantum-well tuner
N Yokouchi, F Koyama, K Iga
IEICE TRANSACTIONS (1976-1990) 73 (9), 1473-1475, 1990
161990
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論文 1–20