Tsuyoshi HASEGAWA

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	すべて	2019 年以来
引用	13676	4911
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i10 指標	125	73

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14 件の論文

18 件の論文

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共著者

Masakazu AONOMANA in NIMS確認したメールアドレス: mth.biglobe.ne.jp
Kazuya TerabeNational Institute for Materials Science (NIMS) -MANA確認したメールアドレス: nims.go.jp
Tohru TsuruokaNational Institute for Materials Science確認したメールアドレス: nims.go.jp
Tomonobu NakayamaWPI-MANA, National Institute for Materials Science確認したメールアドレス: nims.go.jp
James K. GimzewskiProfessor of Chemistry, UCLA確認したメールアドレス: cnsi.ucla.edu
Ilia ValovResearch Centre Juelich, RWTH-Aachen確認したメールアドレス: fz-juelich.de
Alpana NayakIndian Institute of Technology Patna確認したメールアドレス: iitp.ac.in
Rainer WaserProfessur Elektronische Materialien, RWTH Aachen University確認したメールアドレス: iwe.rwth-aachen.de
Hirofumi TanakaKyushu Institute of Technology確認したメールアドレス: brain.kyutech.ac.jp
Rui YangHuazhong University of Science and Technology確認したメールアドレス: hust.edu.cn
Stefan TappertzhofenProfessor in Micro- and Nanoelectronics, TU Dortmund University確認したメールアドレス: tu-dortmund.de
Cedric MannequinCNRS-Nantes Université-Institut des Matériaux de Nantes Jean Rouxel確認したメールアドレス: cnrs-imn.fr
Katsuhiko ArigaWPI-MANA, National Institute for Materials Science (NIMS), Japan and The University of Tokyo, Japan確認したメールアドレス: nims.go.jp
Jonathan P. HillNational Institute for Materials Science確認したメールアドレス: nims.go.jp
Bilge YildizProfessor, Massachusetts Institute of Technology確認したメールアドレス: mit.edu
Dr. Michael LübbenCarl Zeiss SMT GmbH確認したメールアドレス: rwth-aachen.de
Swapan Kumar MandalDepartment of Physics, Visva-Bharati, Santiniketan確認したメールアドレス: visva-bharati.ac.in
Minoru Osada, ProfessorInstitute of Materials and Systems for Sustainability (iMaSS), Nagoya University確認したメールアドレス: imass.nagoya-u.ac.jp
Taichi OkudaHiroshima University, University of Tokyo, Zurich University, RIKEN, Osaka University確認したメールアドレス: hiroshima-u.ac.jp
Yoshio SakkaNational Institute for Materials Science確認したメールアドレス: nims.go.jp

フォロー

Tsuyoshi HASEGAWA

Professor, Dept. Applied Physics, Waseda University

確認したメールアドレス: waseda.jp

Nanoscience Nanodevices Neuromorphic systems


タイトル引用回数順公開年順タイトル順	引用先引用先	年
Short-term plasticity and long-term potentiation mimicked in single inorganic synapses T Ohno, T Hasegawa, T Tsuruoka, K Terabe, JK Gimzewski, M Aono Nature materials 10 (8), 591-595, 2011	1779	2011
Quantized conductance atomic switch K Terabe, T Hasegawa, T Nakayama, M Aono Nature 433 (7021), 47-50, 2005	1510	2005
Nanometer-scale switches using copper sulfide T Sakamoto, H Sunamura, H Kawaura, T Hasegawa, T Nakayama, ... Applied Physics Letters 82 (18), 3032-3034, 2003	649	2003
Nanoscale cation motion in TaO x, HfO x and TiO x memristive systems A Wedig, M Luebben, DY Cho, M Moors, K Skaja, V Rana, T Hasegawa, ... Nature nanotechnology 11 (1), 67-74, 2016	627	2016
Atomic switch: Atom/ion movement controlled devices for beyond Von‐Neumann computers T Hasegawa, K Terabe, T Tsuruoka, M Aono Advanced Materials 24 (2), 252-267, 2012	419	2012
Learning abilities achieved by a single solid‐state atomic switch T Hasegawa, T Ohno, K Terabe, T Tsuruoka, T Nakayama, JK Gimzewski, ... Advanced materials 22 (16), 1831-1834, 2010	363	2010
Forming and switching mechanisms of a cation-migration-based oxide resistive memory T Tsuruoka, K Terabe, T Hasegawa, M Aono Nanotechnology 21 (42), 425205, 2010	361	2010
Effects of Moisture on the Switching Characteristics of Oxide‐Based, Gapless‐Type Atomic Switches T Tsuruoka, K Terabe, T Hasegawa, I Valov, R Waser, M Aono Advanced Functional Materials 22 (1), 70-77, 2012	301	2012
A nonvolatile programmable solid-electrolyte nanometer switch S Kaeriyama, T Sakamoto, H Sunamura, M Mizuno, H Kawaura, ... IEEE Journal of Solid-State Circuits 40 (1), 168-176, 2005	292	2005
Electronic transport in resistive switch T Sakamoto, K Lister, N Banno, T Hasegawa, K Terabe, M Aono Applied Physics Letters 91 (9), 092110, 2007	275	2007
Generic relevance of counter charges for cation-based nanoscale resistive switching memories S Tappertzhofen, I Valov, T Tsuruoka, T Hasegawa, R Waser, M Aono ACS nano 7 (7), 6396-6402, 2013	257	2013
Atomically controlled electrochemical nucleation at superionic solid electrolyte surfaces I Valov, I Sapezanskaia, A Nayak, T Tsuruoka, T Bredow, T Hasegawa, ... Nature materials 11 (6), 530-535, 2012	255	2012
Surface modification of MoS2 using an STM S Hosoki, S Hosaka, T Hasegawa Applied surface science 60, 643-647, 1992	232	1992
On-demand nanodevice with electrical and neuromorphic multifunction realized by local ion migration R Yang, K Terabe, G Liu, T Tsuruoka, T Hasegawa, JK Gimzewski, ... ACS nano 6 (11), 9515-9521, 2012	231	2012
Controlling the Synaptic Plasticity of a Cu₂S Gap‐Type Atomic Switch A Nayak, T Ohno, T Tsuruoka, K Terabe, T Hasegawa, JK Gimzewski, ... Advanced Functional Materials 22 (17), 3606-3613, 2012	198	2012
Conductance quantization and synaptic behavior in a Ta2O5-based atomic switch T Tsuruoka, T Hasegawa, K Terabe, M Aono Nanotechnology 23 (43), 435705, 2012	192	2012
Redox Reactions at Cu,Ag/Ta₂O₅ Interfaces and the Effects of Ta₂O₅ Film Density on the Forming Process in Atomic Switch Structures T Tsuruoka, I Valov, S Tappertzhofen, J van den Hurk, T Hasegawa, ... Advanced functional materials 25 (40), 6374-6381, 2015	170	2015
Formation and disappearance of a nanoscale silver cluster realized by solid electrochemical reaction K Terabe, T Nakayama, T Hasegawa, M Aono Journal of applied physics 91 (12), 10110-10114, 2002	162	2002
Synaptic plasticity and memory functions achieved in a WO3− x-based nanoionics device by using the principle of atomic switch operation R Yang, K Terabe, Y Yao, T Tsuruoka, T Hasegawa, JK Gimzewski, ... Nanotechnology 24 (38), 384003, 2013	160	2013
A polymer‐electrolyte‐based atomic switch S Wu, T Tsuruoka, K Terabe, T Hasegawa, JP Hill, K Ariga, M Aono Advanced Functional Materials 21 (1), 93-99, 2011	156	2011

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