| Nanoscale cation motion in TaOx, HfOx and TiOx memristive systems A Wedig, M Luebben, DY Cho, M Moors, K Skaja, V Rana, T Hasegawa, ... Nature nanotechnology 11 (1), 67-74, 2016 | 607 | 2016 |
| Nanoionic resistive switching memories: On the physical nature of the dynamic reset process A Marchewka, B Roesgen, K Skaja, H Du, CL Jia, J Mayer, V Rana, ... Advanced Electronic Materials 2 (1), 1500233, 2016 | 197 | 2016 |
| Realization of boolean logic functionality using redox‐based memristive devices A Siemon, T Breuer, N Aslam, S Ferch, W Kim, J Van Den Hurk, V Rana, ... Advanced functional materials 25 (40), 6414-6423, 2015 | 154 | 2015 |
| Standards for the characterization of endurance in resistive switching devices M Lanza, R Waser, D Ielmini, JJ Yang, L Goux, J Suñe, AJ Kenyon, ... ACS nano 15 (11), 17214-17231, 2021 | 151 | 2021 |
| Impact of oxygen exchange reaction at the ohmic interface in Ta 2 O 5-based ReRAM devices W Kim, S Menzel, DJ Wouters, Y Guo, J Robertson, B Roesgen, R Waser, ... Nanoscale 8 (41), 17774-17781, 2016 | 142 | 2016 |
| Multistate memristive tantalum oxide devices for ternary arithmetic W Kim, A Chattopadhyay, A Siemon, E Linn, R Waser, V Rana Scientific reports 6 (1), 36652, 2016 | 77 | 2016 |
| Experimental demonstration of memristor-aided logic (MAGIC) using valence change memory (VCM) B Hoffer, V Rana, S Menzel, R Waser, S Kvatinsky IEEE Transactions on Electron Devices 67 (8), 3115-3122, 2020 | 75 | 2020 |
| 3-Bit Multilevel Switching by Deep Reset Phenomenon in Pt/W/TaOX/Pt-ReRAM Devices W Kim, S Menzel, DJ Wouters, R Waser, V Rana IEEE electron device letters 37 (5), 564-567, 2016 | 75 | 2016 |
| A HfO2-Based Complementary Switching Crossbar Adder Thomas Breuer1, Anne Siemon2, Eike Linn2,*, Stephan Menzel1, Rainer Waser1,2 ... Advanced Electronic Materials, 2015 | 66 | 2015 |
| Dependence of single-crystalline Si TFT characteristics on the channel position inside a location-controlled grain V Rana, R Ishihara, Y Hiroshima, D Abe, S Inoue, T Shimoda, ... IEEE Transactions on Electron Devices 52 (12), 2622-2628, 2005 | 56 | 2005 |
| Picosecond multilevel resistive switching in tantalum oxide thin films U Böttger, M von Witzleben, V Havel, K Fleck, V Rana, R Waser, S Menzel Scientific reports 10 (1), 16391, 2020 | 51 | 2020 |
| Multi-valued and fuzzy logic realization using TaOx memristive devices D Bhattacharjee, W Kim, A Chattopadhyay, R Waser, V Rana Scientific reports 8 (1), 8, 2018 | 51 | 2018 |
| Reduction of the forming voltage through tailored oxygen non-stoichiometry in tantalum oxide ReRAM devices K Skaja, M Andrä, V Rana, R Waser, R Dittmann, C Baeumer Scientific reports 8 (1), 10861, 2018 | 50 | 2018 |
| Current Compliance-Dependent Nonlinearity inReRAM F Lentz, B Roesgen, V Rana, DJ Wouters, R Waser IEEE electron device letters 34 (8), 996-998, 2013 | 44 | 2013 |
| Electrical property of coincidence site lattice grain boundary in location-controlled Si island by excimer-laser crystallization R Ishihara, M He, V Rana, Y Hiroshima, S Inoue, T Shimoda, ... Thin solid films 487 (1-2), 97-101, 2005 | 41 | 2005 |
| Realization of Minimum and Maximum Gate Function in Ta2O5-based Memristive Devices T Breuer, L Nielen, B Roesgen, R Waser, V Rana, E Linn Scientific reports 6 (1), 23967, 2016 | 40 | 2016 |
| Critical ReRAM stack parameters controlling complimentary versus bipolar resistive switching A Schonhals, D Wouters, A Marchewka, T Breuer, K Skaja, V Rana, ... 2015 IEEE International Memory Workshop (IMW), 1-4, 2015 | 25 | 2015 |
| Growth, characterization and IV characteristics of tin oxide nanowires A Johari, V Rana Advanced Materials Letters 3 (6), 515-518, 2012 | 25 | 2012 |
| Low-current operations in 4F2-compatible Ta2O5-based complementary resistive switches T Breuer, A Siemon, E Linn, S Menzel, R Waser, V Rana Nanotechnology 26 (41), 415202, 2015 | 24 | 2015 |
| Capping layer on thin Si film for micro-Czochralski process with excimer laser crystallization V Rana, R Ishihara, Y Hiroshima, D Abe, S Inoue, T Shimoda, ... JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF …, 2006 | 24* | 2006 |
Ryoichi IshiharaDelft University of Technology, QuTechVerified email at tudelft.nl
