| Tunneling magnetoresistance of magnetic tunnel junctions using perpendicular magnetization L10-CoPt electrodes G Kim, Y Sakuraba, M Oogane, Y Ando, T Miyazaki Applied Physics Letters 92 (17), 2008 | 202 | 2008 |
| 4Gbit density STT-MRAM using perpendicular MTJ realized with compact cell structure SW Chung, T Kishi, JW Park, M Yoshikawa, KS Park, T Nagase, ... 2016 IEEE International Electron Devices Meeting (IEDM), 27.1. 1-27.1. 4, 2016 | 164 | 2016 |
| Fast magnetization precession observed in L1-FePt epitaxial thin film S Mizukami, S Iihama, N Inami, T Hiratsuka, G Kim, H Naganuma, ... Applied Physics Letters 98 (5), 2011 | 134 | 2011 |
| Electronic device and method for fabricating the same WJ Choi, KS Park, C Dong, B Lee, GC Kim, SM Noh, MS Lee, CS Park, ... US Patent 10,490,741, 2019 | 69 | 2019 |
| Electronic device and method for fabricating the same WJ Choi, KS Park, C Dong, B Lee, GC Kim, SM Noh, MS Lee, CS Park, ... US Patent 9,865,806, 2018 | 69 | 2018 |
| Electrical Detection of Millimeter-Waves by Magnetic Tunnel Junctions Using Perpendicular Magnetized L10-FePd Free Layer H Naganuma, G Kim, Y Kawada, N Inami, K Hatakeyama, S Iihama, ... Nano letters 15 (1), 623-628, 2015 | 49 | 2015 |
| Fabrication of perpendicularly magnetized magnetic tunnel junctions with L1-CoPt/Co2MnSi hybrid electrode T Hiratsuka, G Kim, Y Sakuraba, T Kubota, K Kodama, N Inami, ... Journal of Applied Physics 107 (9), 2010 | 31 | 2010 |
| Observation of precessional magnetization dynamics in L10-FePt thin films with different L10 order parameter values S Iihama, S Mizukami, N Inami, T Hiratsuka, G Kim, H Naganuma, ... Japanese Journal of Applied Physics 52 (7R), 073002, 2013 | 28 | 2013 |
| Electronic device KIM Yang-Kon, KS Park, B Lee, WJ Choi, GC Kim, D Watanabe, ... US Patent App. 14/558,263, 2016 | 22 | 2016 |
| Electronic devices having semiconductor memory units having magnetic tunnel junction element GC Kim, KS Park US Patent 9,312,474, 2016 | 21 | 2016 |
| Structural, magnetic, and magnetotransport properties of FePt/MgO/CoPt perpendicularly magnetized tunnel junctions N Inami, G Kim, T Hiratsuka, H Naganuma, M Oogane, Y Ando Journal of Physics: Conference Series 200 (5), 052008, 2010 | 20 | 2010 |
| Control of crystallization and magnetic properties of CoFeB by boron concentration JS Kim, G Kim, J Jung, K Jung, J Cho, WY Kim, CY You Scientific Reports 12 (1), 4549, 2022 | 19 | 2022 |
| Electronic device and method for fabricating the same KIM Yang-Kon, B Lee, WJ Choi, GC Kim, J Lim US Patent 9,865,319, 2018 | 16 | 2018 |
| Magnetic memory and manufacturing method of the same D Watanabe, M Nagamine, EEH Youngmin, K Ueda, T Nagase, ... US Patent 9,991,313, 2018 | 15 | 2018 |
| Magnetoresistive element D Watanabe, YK Kim, M Nagamine, EEH Youngmin, K Ueda, T Nagase, ... US Patent 10,103,318, 2018 | 13 | 2018 |
| Electronic device for improving characteristic of variable resistance element and method of fabricating the same WJ Choi, KS Park, C Dong, B Lee, GC Kim, SM Noh US Patent 9,502,639, 2016 | 13 | 2016 |
| Electronic device and method for fabricating the same GC Kim, KS Park, B Lee, WJ Choi, KIM Yang-Kon US Patent App. 14/788,420, 2016 | 13 | 2016 |
| Magnetic memory device and method of manufacturing the same DH Jung, KS Park, GC Kim US Patent App. 13/251,461, 2013 | 12 | 2013 |
| Magnetoresistive memory device and manufacturing method of the same K Yoshino, T Nagase, EEH Youngmin, D Watanabe, K Sawada, ... US Patent App. 15/268,497, 2017 | 9 | 2017 |
| Electronic device and method for fabricating the same C Dong, KS Park, B Lee, WJ Choi, GC Kim, KIM Yang-Kon US Patent 9,734,060, 2017 | 8 | 2017 |
