| Angle-resolved photoelectron-spectroscopy study of the Si (001) 2× 1-K surface Y Enta, T Kinoshita, S Suzuki, S Kono Physical Review B 36 (18), 9801, 1987 | 177 | 1987 |
| Angle-resolved-photoemission study of the electronic structure of the Si (001) c (4× 2) surface Y Enta, S Suzuki, S Kono Physical review letters 65 (21), 2704, 1990 | 136 | 1990 |
| Electronic structure of the single-domain Si (001) 21-K surface Y Enta, S Suzuki, S Kono, T Sakamoto Physical Review B 39 (8), 5524, 1989 | 128 | 1989 |
| Surface and bulk core-level shifts of the Si (111)√ 3√ 3-Ag surface: Evidence for a charged√ 3√ 3 layer S Kono, K Higashiyama, T Kinoshita, T Miyahara, H Kato, H Ohsawa, ... Physical review letters 58 (15), 1555, 1987 | 107 | 1987 |
| Low energy electron diffraction and X-ray photoelectron spectroscopy studies of the formation of submonolayer interfaces of Sb/Si (111) CY Park, T Abukawa, T Kinoshita, Y Enta, S Kono Japanese journal of applied physics 27 (1R), 147, 1988 | 106 | 1988 |
| Initial Oxidation of Si(100)- as an Autocatalytic Reaction M Suemitsu, Y Enta, Y Miyanishi, N Miyamoto Physical review letters 82 (11), 2334, 1999 | 80 | 1999 |
| Angle-resolved photoemission studies of clean and adsorbed Si (001) surfaces: 2× 1, c (4× 2), 2× 1-Na and 2× 2-Ga Y Enta, S Suzuki, S Kono Surface science 242 (1-3), 277-283, 1991 | 59 | 1991 |
| Controls over structural and electronic properties of epitaxial graphene on silicon using surface termination of 3C-SiC (111)/Si H Fukidome, S Abe, R Takahashi, K Imaizumi, S Inomata, H Handa, ... Applied physics express 4 (11), 115104, 2011 | 57 | 2011 |
| Precise control of epitaxy of graphene by microfabricating SiC substrate H Fukidome, Y Kawai, F Fromm, M Kotsugi, H Handa, T Ide, T Ohkouchi, ... Applied Physics Letters 101 (4), 2012 | 51 | 2012 |
| Control of epitaxy of graphene by crystallographic orientation of a Si substrate toward device applications H Fukidome, R Takahashi, S Abe, K Imaizumi, H Handa, HC Kang, ... Journal of Materials Chemistry 21 (43), 17242-17248, 2011 | 50 | 2011 |
| Real-time observation of the dry oxidation of the Si (100) surface with ambient pressure x-ray photoelectron spectroscopy Y Enta, BS Mun, M Rossi, PN Ross, Z Hussain, CS Fadley, KS Lee, ... Applied Physics Letters 92 (1), 2008 | 50 | 2008 |
| Growth kinetics of thermal oxidation process on Si (100) by real time ultraviolet photoelectron spectroscopy Y Enta, Y Takegawa, M Suemitsu, N Miyamoto Applied surface science 100, 449-453, 1996 | 48 | 1996 |
| Photoelectron and inverse photoelectron spectroscopy studies of the Si (111) 3× 3-Sb surface T Kinoshita, Y Enta, H Ohta, Y Yaegashi, S Suzuki, S Kono Surface science 204 (3), 405-414, 1988 | 42 | 1988 |
| Empty-and Filled-Electronic States of the Si (111)\sqrt3×\sqrt3-Sn,\sqrt3×\sqrt3-In and 2\sqrt3× 2\sqrt3-Sn Surfaces T Kinoshita, H Ohta, Y Enta, Y Yaegashi, S Suzuki, S Kono Journal of the Physical Society of Japan 56 (11), 4015-4021, 1987 | 41 | 1987 |
| Empty-and Filled-Electronic States of the Si (111)\sqrt3×\sqrt3-Sn,\sqrt3×\sqrt3-In and 2\sqrt3× 2\sqrt3-Sn Surfaces T Kinoshita, H Ohta, Y Enta, Y Yaegashi, S Suzuki, S Kono Journal of the Physical Society of Japan 56 (11), 4015-4021, 1987 | 41 | 1987 |
| Empty-and Filled-Electronic States of the Si (111)\sqrt3×\sqrt3-Sn,\sqrt3×\sqrt3-In and 2\sqrt3× 2\sqrt3-Sn Surfaces T Kinoshita, H Ohta, Y Enta, Y Yaegashi, S Suzuki, S Kono Journal of the Physical Society of Japan 56 (11), 4015-4021, 1987 | 41 | 1987 |
| Angle-resolved photoemission study of a single-domain Si (001) 2× 1-K surface with synchrotron radiation: symmetry and dispersion of surface-states T Abukawa, T Kashiwakura, T Okane, Y Sasaki, H Takahashi, Y Enta, ... Surface science 261 (1-3), 217-223, 1992 | 40 | 1992 |
| Structure, chemical bonding and these thermal stabilities of diamond-like carbon (DLC) films by RF magnetron sputtering H Nakazawa, T Mikami, Y Enta, M Suemitsu, M Mashita Japanese journal of applied physics 42 (6B), L676, 2003 | 38 | 2003 |
| Real-time measurements of Si 2 p core level during dry oxidation of Si (100) Y Enta, Y Miyanishi, H Irimachi, M Niwano, M Suemitsu, N Miyamoto, ... Physical Review B 57 (11), 6294, 1998 | 36 | 1998 |
| Photoemission study of the negative electron affinity surfaces of O/Cs/Si (001) 2× 1 and O/K/Si (001) 2× 1 T Abukawa, Y Enta, T Kashiwakura, S Suzuki, S Kono, T Sakamoto Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 8 (4 …, 1990 | 35 | 1990 |
