|Optical properties of ZnO rods formed by metalorganic chemical vapor deposition|
BP Zhang, NT Binh, Y Segawa, K Wakatsuki, N Usami
Applied Physics Letters 83 (8), 1635-1637, 2003
|Island formation during growth of Ge on Si (100): A study using photoluminescence spectroscopy|
H Sunamura, N Usami, Y Shiraki, S Fukatsu
Applied physics letters 66 (22), 3024-3026, 1995
|A quantum-dot spin qubit with coherence limited by charge noise and fidelity higher than 99.9%|
J Yoneda, K Takeda, T Otsuka, T Nakajima, MR Delbecq, G Allison, ...
Nature nanotechnology 13 (2), 102-106, 2018
|Formation of highly aligned ZnO tubes on sapphire (0001) substrates|
BP Zhang, NT Binh, K Wakatsuki, Y Segawa, Y Yamada, N Usami, ...
Applied Physics Letters 84 (20), 4098-4100, 2004
|Growth of structure-controlled polycrystalline silicon ingots for solar cells by casting|
K Fujiwara, W Pan, N Usami, K Sawada, M Tokairin, Y Nose, A Nomura, ...
Acta Materialia 54 (12), 3191-3197, 2006
|Growth of quantum wells on sapphire substrates and observation of the two-dimensional confinement effect|
BP Zhang, NT Binh, K Wakatsuki, CY Liu, Y Segawa, N Usami
Applied Physics Letters 86 (3), 032105, 2005
|Effects of growth temperature on the characteristics of ZnO epitaxial films deposited by metalorganic chemical vapor deposition|
BP Zhang, K Wakatsuki, NT Binh, N Usami, Y Segawa
Thin Solid Films 449 (1-2), 12-19, 2004
|Control of Ge dots in dimension and position by selective epitaxial growth and their optical properties|
ES Kim, N Usami, Y Shiraki
Applied physics letters 72 (13), 1617-1619, 1998
|Enhanced quantum efficiency of solar cells with self-assembled Ge dots stacked in multilayer structure|
A Alguno, N Usami, T Ujihara, K Fujiwara, G Sazaki, K Nakajima, ...
Applied Physics Letters 83 (6), 1258-1260, 2003
|Investigation of grain boundaries in BaSi2 epitaxial films on Si (1 1 1) substrates using transmission electron microscopy and electron-beam-induced current technique|
M Baba, K Toh, K Toko, N Saito, N Yoshizawa, K Jiptner, T Sekiguchi, ...
Journal of crystal growth 348 (1), 75-79, 2012
|Directional growth method to obtain high quality polycrystalline silicon from its melt|
K Fujiwara, W Pan, K Sawada, M Tokairin, N Usami, Y Nose, A Nomura, ...
Journal of Crystal Growth 292 (2), 282-285, 2006
|Grain growth behaviors of polycrystalline silicon during melt growth processes|
K Fujiwara, Y Obinata, T Ujihara, N Usami, G Sazaki, K Nakajima
Journal of crystal growth 266 (4), 441-448, 2004
|In situ observation of elementary growth steps on the surface of protein crystals by laser confocal microscopy|
G Sazaki, T Matsui, K Tsukamoto, N Usami, T Ujihara, K Fujiwara, ...
Journal of crystal growth 262 (1-4), 536-542, 2004
|Determination of bulk minority-carrier lifetime in BaSi2 earth-abundant absorber films by utilizing a drastic enhancement of carrier lifetime by post-growth annealing|
KO Hara, N Usami, K Nakamura, R Takabe, M Baba, K Toko, T Suemasu
Applied Physics Express 6 (11), 112302, 2013
|Highly (111)-oriented Ge thin films on insulators formed by Al-induced crystallization|
K Toko, M Kurosawa, N Saitoh, N Yoshizawa, N Usami, M Miyao, ...
Applied physics letters 101 (7), 072106, 2012
|Generation mechanism of dislocations during directional solidification of multicrystalline silicon using artificially designed seed|
I Takahashi, N Usami, K Kutsukake, G Stokkan, K Morishita, K Nakajima
Journal of Crystal Growth 312 (7), 897-901, 2010
|Low-temperature (180 C) formation of large-grained Ge (111) thin film on insulator using accelerated metal-induced crystallization|
K Toko, R Numata, N Oya, N Fukata, N Usami, T Suemasu
Applied Physics Letters 104 (2), 022106, 2014
|Investigation of the recombination mechanism of excess carriers in undoped BaSi2 films on silicon|
KO Hara, N Usami, K Toh, M Baba, K Toko, T Suemasu
Journal of applied physics 112 (8), 083108, 2012
|Strong resonant luminescence from Ge quantum dots in photonic crystal microcavity at room temperature|
JS Xia, Y Ikegami, Y Shiraki, N Usami, Y Nakata
Applied physics letters 89 (20), 201102, 2006
|Optical anisotropy in wire‐geometry SiGe layers grown by gas‐source selective epitaxial growth technique|
N Usami, T Mine, S Fukatsu, Y Shiraki
Applied physics letters 64 (9), 1126-1128, 1994