| Atomic structure of conducting nanofilaments in TiO2 resistive switching memory DH Kwon, KM Kim, JH Jang, JM Jeon, MH Lee, GH Kim, XS Li, GS Park, ... Nature nanotechnology 5 (2), 148-153, 2010 | 2352 | 2010 |
| Multifunctional wearable devices for diagnosis and therapy of movement disorders D Son, J Lee, S Qiao, R Ghaffari, J Kim, JE Lee, C Song, SJ Kim, DJ Lee, ... Nature nanotechnology 9 (5), 397-404, 2014 | 1515 | 2014 |
| Resistive switching mechanism of TiO2 thin films grown by atomic-layer deposition BJ Choi, DS Jeong, SK Kim, C Rohde, S Choi, JH Oh, HJ Kim, CS Hwang, ... Journal of applied physics 98 (3), 2005 | 1465 | 2005 |
| Emerging memories: resistive switching mechanisms and current status DS Jeong, R Thomas, RS Katiyar, JF Scott, H Kohlstedt, A Petraru, ... Reports on progress in physics 75 (7), 076502, 2012 | 1217 | 2012 |
| Ferroelectricity and Antiferroelectricity of Doped Thin HfO2‐Based Films MH Park, YH Lee, HJ Kim, YJ Kim, T Moon, KD Kim, J Mueller, A Kersch, ... Advanced Materials 27 (11), 1811-1831, 2015 | 1028 | 2015 |
| Resistive switching materials for information processing Z Wang, H Wu, GW Burr, CS Hwang, KL Wang, Q Xia, JJ Yang Nature Reviews Materials 5 (3), 173-195, 2020 | 862 | 2020 |
| Nanofilamentary resistive switching in binary oxide system; a review on the present status and outlook KM Kim, DS Jeong, CS Hwang Nanotechnology 22 (25), 254002, 2011 | 751 | 2011 |
| Evolution of phases and ferroelectric properties of thin Hf0. 5Zr0. 5O2 films according to the thickness and annealing temperature M Hyuk Park, H Joon Kim, Y Jin Kim, W Lee, T Moon, C Seong Hwang Applied Physics Letters 102 (24), 2013 | 735 | 2013 |
| Anode-interface localized filamentary mechanism in resistive switching of TiO2 thin films KM Kim, BJ Choi, YC Shin, S Choi, CS Hwang Applied physics letters 91 (1), 2007 | 511 | 2007 |
| A Resistive Memory in Semiconducting BiFeO3 Thin‐Film Capacitors AQ Jiang, C Wang, KJ Jin, XB Liu, JF Scott, CS Hwang, TA Tang, HB Lu, ... Advanced Materials 23 (10), 1277-1281, 2011 | 459 | 2011 |
| Review and perspective on ferroelectric HfO2-based thin films for memory applications MH Park, YH Lee, T Mikolajick, U Schroeder, CS Hwang Mrs Communications 8 (3), 795-808, 2018 | 457 | 2018 |
| The effects of crystallographic orientation and strain of thin Hf0. 5Zr0. 5O2 film on its ferroelectricity M Hyuk Park, H Joon Kim, Y Jin Kim, T Moon, C Seong Hwang Applied Physics Letters 104 (7), 2014 | 412 | 2014 |
| Identification of a determining parameter for resistive switching of TiO2 thin films C Rohde, BJ Choi, DS Jeong, S Choi, JS Zhao, CS Hwang Applied Physics Letters 86 (26), 2005 | 410 | 2005 |
| High dielectric constant TiO2 thin films on a Ru electrode grown at 250 C by atomic-layer deposition SK Kim, WD Kim, KM Kim, CS Hwang, J Jeong Applied Physics Letters 85 (18), 4112-4114, 2004 | 404 | 2004 |
| A review of three‐dimensional resistive switching cross‐bar array memories from the integration and materials property points of view JY Seok, SJ Song, JH Yoon, KJ Yoon, TH Park, DE Kwon, H Lim, GH Kim, ... Advanced Functional Materials 24 (34), 5316-5339, 2014 | 401 | 2014 |
| First-principles study on doping and phase stability of CK Lee, E Cho, HS Lee, CS Hwang, S Han Physical Review B—Condensed Matter and Materials Physics 78 (1), 012102, 2008 | 383 | 2008 |
| Memristors for energy‐efficient new computing paradigms DS Jeong, KM Kim, S Kim, BJ Choi, CS Hwang Advanced Electronic Materials 2 (9), 1600090, 2016 | 369 | 2016 |
| An artificial nociceptor based on a diffusive memristor JH Yoon, Z Wang, KM Kim, H Wu, V Ravichandran, Q Xia, CS Hwang, ... Nature communications 9 (1), 417, 2018 | 362 | 2018 |
| Al‐Doped TiO2 Films with Ultralow Leakage Currents for Next Generation DRAM Capacitors SK Kim, GJ Choi, SY Lee, M Seo, SW Lee, JH Han, HS Ahn, S Han, ... Advanced Materials 20 (8), 1429-1435, 2008 | 345 | 2008 |
| Deposition of extremely thin (Ba,Sr)TiO3 thin films for ultra‐large‐scale integrated dynamic random access memory application CS Hwang, SO Park, HJ Cho, CS Kang, HK Kang, SI Lee, MY Lee Applied physics letters 67 (19), 2819-2821, 1995 | 342 | 1995 |
Min Hyuk ParkSeoul National University確認したメール アドレス: snu.ac.kr
