フォロー
Alexandre Subirats
Alexandre Subirats
確認したメール アドレス: micron.com
タイトル
引用先
引用先
Comphy—A compact-physics framework for unified modeling of BTI
G Rzepa, J Franco, B O’Sullivan, A Subirats, M Simicic, G Hellings, ...
Microelectronics Reliability 85, 49-65, 2018
1712018
Vertical Ferroelectric HfO2 FET based on 3-D NAND Architecture: Towards Dense Low-Power Memory
K Florent, M Pesic, A Subirats, K Banerjee, S Lavizzari, A Arreghini, ...
2018 IEEE International Electron Devices Meeting (IEDM), 2.5. 1-2.5. 4, 2018
1302018
Investigation of the endurance of FE-HfO2 devices by means of TDDB studies
K Florent, A Subirats, S Lavizzari, R Degraeve, U Celano, B Kaczer, ...
2018 IEEE International Reliability Physics Symposium (IRPS), 6D. 3-1-6D. 3-7, 2018
342018
Efficient physical defect model applied to PBTI in high-κ stacks
G Rzepa, J Franco, A Subirats, M Jech, A Chasin, A Grill, M Waltl, ...
2017 IEEE International Reliability Physics Symposium (IRPS), XT-11.1-XT-11.6, 2017
342017
Impact of single charge trapping on the variability of ultrascaled planar and trigate FDSOI MOSFETs: Experiment versus simulation
A Subirats, X Garros, J El Husseini, C Le Royer, G Reimbold, G Ghibaudo
IEEE transactions on electron devices 60 (8), 2604-2610, 2013
272013
Vertical ferroelectric HfO
K Florent, M Pesic, A Subirats, K Banerjee, S Lavizzari, A Arreghini
IEDM Tech. Dig 2, 1-2.5, 2017
252017
Si/SiGe superlattice I/O FinFETs in a vertically-stacked gate-all-around horizontal nanowire technology
G Hellings, H Mertens, A Subirats, E Simoen, T Schram, LA Ragnarsson, ...
2018 IEEE Symposium on VLSI Technology, 85-86, 2018
232018
Gate stack thermal stability and PBTI reliability challenges for 3D sequential integration: Demonstration of a suitable gate stack for top and bottom tier nMOS
J Franco, L Witters, A Vandooren, H Arimura, S Sioncke, V Putcha, A Vais, ...
2017 IEEE International Reliability Physics Symposium (IRPS), 2B-3.1-2B-3.5, 2017
222017
New Insights into the Imprint Effect in FE-HfO2 and its Recovery
Y Higashi, K Florent, A Subirats, B Kaczer, L Di Piazza, S Clima, N Ronchi, ...
2019 IEEE International Reliability Physics Symposium (IRPS), 1-7, 2019
212019
Performance and electrostatic improvement by high-pressure anneal on Si-passivated strained Ge pFinFET and gate all around devices with superior NBTI reliability
H Arimura, L Witters, D Cott, H Dekkers, R Loo, J Mitard, LÅ Ragnarsson, ...
2017 Symposium on VLSI Technology, T196-T197, 2017
212017
A new gate pattern measurement for evaluating the BTI degradation in circuit conditions
A Subirats, X Garros, J Cluzel, J El Husseini, F Cacho, X Federspiel, ...
2014 IEEE International Reliability Physics Symposium, 5D. 1.1-5D. 1.5, 2014
212014
Modeling the dynamic variability induced by charged traps in a bilayer gate oxide
A Subirats, X Garros, J El Husseini, E Vincent, G Reimbold, G Ghibaudo
IEEE Transactions on Electron Devices 62 (2), 485-492, 2014
182014
Impact of dynamic variability on SRAM functionality and performance in nano-scaled CMOS technologies
A Subirats, X Garros, J Mazurier, J El Husseini, O Rozeau, G Reimbold, ...
2013 IEEE International Reliability Physics Symposium (IRPS), 4A. 6.1-4A. 6.5, 2013
182013
Impact of backside interface on hot carriers degradation of thin film FDSOI Nmosfets
L Brunet, X Garros, A Bravaix, A Subirats, F Andrieu, O Weber, ...
2012 IEEE International Reliability Physics Symposium (IRPS), 3B. 2.1-3B. 2.5, 2012
182012
Experimental and theoretical verification of channel conductivity degradation due to grain boundaries and defects in 3D NAND
A Subirats, A Arreghini, E Capogreco, R Delhougne, CL Tan, A Hikavyy, ...
2017 IEEE International Electron Devices Meeting (IEDM), 21.2. 1-21.2. 4, 2017
162017
Hot-carrier analysis on nMOS Si FinFETs with solid source doped junction
A Chasin, J Franco, R Ritzenthaler, G Hellings, M Cho, Y Sasaki, ...
2016 IEEE International Reliability Physics Symposium (IRPS), 4B-4-1-4B-4-6, 2016
152016
MOVPE In1− xGaxAs high mobility channel for 3-D NAND memory
E Capogreco, JG Lisoni, A Arreghini, A Subirats, B Kunert, W Guo, ...
2015 IEEE International Electron Devices Meeting (IEDM), 3.1. 1-3.1. 4, 2015
152015
A complete characterization and modeling of the BTI-induced dynamic variability of SRAM arrays in 28-nm FD-SOI technology
J El Husseini, X Garros, J Cluzel, A Subirats, A Makosiej, O Weber, ...
IEEE Transactions on Electron Devices 61 (12), 3991-3999, 2014
152014
Feasibility of InxGa1–xAs High Mobility Channel for 3-D NAND Memory
E Capogreco, A Subirats, JG Lisoni, A Arreghini, B Kunert, W Guo, CL Tan, ...
IEEE Transactions on Electron Devices 64 (1), 130-136, 2016
132016
Defect-centric perspective of combined BTI and RTN time-dependent variability
P Weckx, B Kaczer, J Franco, PJ Roussel, E Bury, A Subirats, ...
2015 IEEE International Integrated Reliability Workshop (IIRW), 21-28, 2015
132015
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