Giancarlo Salviati
Giancarlo Salviati
Director of Research Associated, Project leader, IMEM-CNR
確認したメール アドレス: cnr.it - ホームページ
タイトル引用先
InAs/InSb nanowire heterostructures grown by chemical beam epitaxy
D Ercolani, F Rossi, A Li, S Roddaro, V Grillo, G Salviati, F Beltram, ...
Nanotechnology 20 (50), 505605, 2009
1232009
On the mechanisms of strain release in molecular‐beam‐epitaxy‐grown InxGa1−xAs/GaAs single heterostructures
AV Drigo, A Aydinli, A Carnera, F Genova, C Rigo, C Ferrari, P Franzosi, ...
Journal of Applied Physics 66 (5), 1975-1983, 1989
1191989
Zn vacancy induced green luminescence on non-polar surfaces in ZnO nanostructures
F Fabbri, M Villani, A Catellani, A Calzolari, G Cicero, D Calestani, ...
Scientific reports 4, 5158, 2014
1152014
Strain relaxation in graded composition buffer layers
F Romanato, E Napolitani, A Carnera, AV Drigo, L Lazzarini, G Salviati, ...
Journal of applied physics 86 (9), 4748-4755, 1999
1111999
Influence of short-term low current dc aging on the electrical and optical properties of InGaN blue light-emitting diodes
F Rossi, M Pavesi, M Meneghini, G Salviati, M Manfredi, G Meneghesso, ...
Journal of applied physics 99 (5), 053104, 2006
942006
Cathodoluminescence and transmission electron microscopy study of the influence of crystal defects on optical transitions in GaN
G Salviati, M Albrecht, C Zanotti‐Fregonara, N Armani, M Mayer, ...
physica status solidi (a) 171 (1), 325-339, 1999
941999
Structural and optical study of SnO2 nanobelts and nanowires
D Calestani, M Zha, A Zappettini, L Lazzarini, G Salviati, L Zanotti, ...
Materials Science and Engineering: C 25 (5-8), 625-630, 2005
802005
On the formation of antiphase domains in the system of GaAs on Ge
Y Li, G Salviati, MMG Bongers, L Lazzarini, L Nasi, LJ Giling
Journal of crystal growth 163 (3), 195-202, 1996
791996
Morphological, structural and optical study of quasi‐1D SnO2 nanowires and nanobelts
D Calestani, L Lazzarini, G Salviati, M Zha
Crystal Research and Technology: Journal of Experimental and Industrial …, 2005
782005
Low-temperature In2O3 nanowire luminescence properties as a function of oxidizing thermal treatments
M Mazzera, M Zha, D Calestani, A Zappettini, L Lazzarini, G Salviati, ...
Nanotechnology 18 (35), 355707, 2007
742007
On the sublattice location of GaAs grown on Ge
Y Li, L Lazzarini, LJ Giling, G Salviati
Journal of applied physics 76 (10), 5748-5753, 1994
701994
Self-aggregation of quantum dots for very thin InAs layers grown on GaAs
A Polimeni, A Patane, M Capizzi, F Martelli, L Nasi, G Salviati
Physical Review B 53 (8), R4213, 1996
681996
Selective ultrathin carbon sheath on porous silicon nanowires: materials for extremely high energy density planar micro-supercapacitors
JP Alper, S Wang, F Rossi, G Salviati, N Yiu, C Carraro, R Maboudian
Nano letters 14 (4), 1843-1847, 2014
652014
Optical evidence of an electrothermal degradation of InGaN-based light-emitting diodes during electrical stress
M Pavesi, M Manfredi, G Salviati, N Armani, F Rossi, G Meneghesso, ...
Applied physics letters 84 (17), 3403-3405, 2004
632004
Cathodoluminescence characterization of dislocations in gallium nitride using a transmission electron microscope
N Yamamoto, H Itoh, V Grillo, SF Chichibu, S Keller, JS Speck, ...
Journal of applied physics 94 (7), 4315-4319, 2003
602003
Magnetic and morphological study of BaZn2Fe16O27 hexagonal ferrite prepared by chemical coprecipitation method
F Leccabue, R Panizzieri, G Salviati, G Albanese, ...
Journal of applied physics 59 (6), 2114-2118, 1986
561986
Continuously graded buffers for InGaAsGaAs structures grown on GaAs
A Bosacchi, AC De Riccardis, P Frigeri, S Franchi, C Ferrari, S Gennari, ...
Journal of crystal growth 175, 1009-1015, 1997
541997
Nucleation and growth of SnO2 nanowires
D Calestani, M Zha, G Salviati, L Lazzarini, L Zanotti, E Comini, ...
Journal of Crystal Growth 275 (1-2), e2083-e2087, 2005
522005
Unpredicted nucleation of extended zinc blende phases in wurtzite ZnO nanotetrapod arms
L Lazzarini, G Salviati, F Fabbri, M Zha, D Calestani, A Zappettini, ...
ACS nano 3 (10), 3158-3164, 2009
512009
In‐Plane Bandgap Engineering by Modulated Hydrogenation of Dilute Nitride Semiconductors
M Felici, A Polimeni, G Salviati, L Lazzarini, N Armani, F Masia, M Capizzi, ...
Advanced Materials 18 (15), 1993-1997, 2006
512006
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論文 1–20