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Phongsaphak Sittimart
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Diamond/β-Ga2O3 pn heterojunction diodes fabricated by low-temperature direct-bonding
P Sittimart, S Ohmagari, T Matsumae, H Umezawa, T Yoshitake
AIP Advances 11 (10), 2021
362021
Epitaxial growth of β-FeSi2 thin films on Si (111) substrates by radio frequency magnetron sputtering and their application to near-infrared photodetection
N Promros, R Baba, M Takahara, TM Mostafa, P Sittimart, M Shaban, ...
Japanese journal of applied physics 55 (6S2), 06HC03, 2016
192016
Enhanced in-plane uniformity and breakdown strength of diamond Schottky barrier diodes fabricated on heteroepitaxial substrates
P Sittimart, S Ohmagari, T Yoshitake
Japanese journal of applied physics 60 (SB), SBBD05, 2021
172021
Photovoltaic, capacitance-voltage, conductance-voltage, and electrical impedance characteristics of p-type silicon/intrinsic-silicon/n-type semiconducting iron disilicide …
R Chaleawpong, N Promros, P Charoenyuenyao, N Borwornpornmetee, ...
Thin Solid Films 709, 138229, 2020
152020
Thermally Stable and Radiation‐Proof Visible‐Light Photodetectors Made from N‐Doped Diamond
P Sittimart, S Ohmagari, H Umezawa, H Kato, K Ishiji, T Yoshitake
Advanced Optical Materials 11 (12), 2203006, 2023
112023
Nanocarbon ohmic electrodes fabricated by coaxial arc plasma deposition for phosphorus-doped diamond electronics application
SM Valappil, S Ohmagari, A Zkria, P Sittimart, E Abubakr, H Kato, ...
AIP Advances 12 (8), 2022
112022
Analysis of Electrical Characteristics of Pd/n‐Nanocarbon/p‐Si Heterojunction Diodes: By CVf and G/wVf
A Zkria, E Abubakr, P Sittimart, T Yoshitake
Journal of Nanomaterials 2020 (1), 4917946, 2020
102020
Production of p‐Type Si/n‐Type β‐FeSi2 Heterojunctions Using Facing‐Targets Direct‐Current Sputtering and Evaluation of Their Resistance and Interface State …
R Chaleawpong, N Promros, P Charoenyuenyao, A Nopparuchikun, ...
physica status solidi (a) 215 (20), 1701022, 2018
92018
Interface state density and series resistance of n-type nanocrystalline FeSi2/p-Type Si heterojunctions formed by utilizing facing-target direct-current sputtering
P Sittimart, A Duangrawa, P Onsee, S Teakchaicum, A Nopparuchikun, ...
Journal of Nanoscience and Nanotechnology 18 (3), 1841-1846, 2018
92018
Computation of Heterojunction Parameters at Low Temperatures in Heterojunctions Comprised of n‐Type β‐FeSi2 Thin Films and p‐Type Si(111) Substrates …
P Sittimart, A Nopparuchikun, N Promros
Advances in Materials Science and Engineering 2017 (1), 6590606, 2017
82017
Characterization of n-type nanocrystalline iron disilicide/intrinsic ultrananocrystalline diamond/amorphous carbon composite/p-type silicon heterojunctions at low temperatures
N Promros, R Baba, H Kishimoto, P Sittimart, T Hanada, K Hanada, ...
Journal of Nanoelectronics and Optoelectronics 11 (5), 579-584, 2016
82016
Investigation of electrical transport properties in heterojunctions comprised of silicon substrate and nanocrystalline iron disilicide films
N Promros, P Sittimart, W Kaenrai
International Journal of Nanotechnology 13 (10-12), 903-912, 2016
82016
The Role of Zn Substitution in Improving the Electrical Properties of CuI Thin Films and Optoelectronic Performance of CuI MSM Photodetectors
CY Tsay, YC Chen, HM Tsai, P Sittimart, T Yoshitake
Materials 15 (22), 8145, 2022
72022
Physical Properties of Fe3Si Films Coated through Facing Targets Sputtering after Microwave Plasma Treatment
N Borwornpornmetee, P Charoenyuenyao, R Chaleawpong, ...
Coatings 11 (8), 923, 2021
72021
Photovoltaic properties and series resistance of p-type Si/intrinsic Si/n-type nanocrystalline FeSi2 heterojunctions created by utilizing facing-targets direct-current sputtering
W Kaenrai, N Promros, P Sittimart, R Chaleawpong, P Charoenyuenyao, ...
Journal of Nanoscience and Nanotechnology 19 (3), 1445-1450, 2019
72019
Heteroepitaxial growth of β-Ga2O3 thin films on single crystalline diamond (111) substrates by radio frequency magnetron sputtering
T Kusaba, P Sittimart, Y Katamune, T Kageura, H Naragino, S Ohmagari, ...
Applied Physics Express 16 (10), 105503, 2023
52023
Reverse bias dependent impedance and dielectric properties of Al/n-NC FeSi2/p-Si/Pd heterostructures formed by facing-targets sputtering
N Borwornpornmetee, R Chaleawpong, P Charoenyuenyao, ...
Materials Science in Semiconductor Processing 146, 106641, 2022
52022
Investigation of morphological surface features, wetting behavior and mechanical traits under various substrate temperatures for beta iron disilicide prepared via facing …
P Charoenyuenyao, R Chaleawpong, N Borwornpornmetee, ...
Materials Science in Semiconductor Processing 146, 106604, 2022
52022
Interface-state density estimation of n-type nanocrystalline FeSi2/p-type Si heterojunctions fabricated by pulsed laser deposition
A Nopparuchikun, N Promros, P Sittimart, P Onsee, A Duangrawa, ...
Advances in Natural Sciences: Nanoscience and Nanotechnology 8 (3), 035016, 2017
52017
Carrier transportation properties and series resistance of n-type β-FeSi2/p-type Si heterojunctions fabricated by RF magnetron sputtering
A Nopparuchikun, N Promros, S Teakchaicum, P Onsee, A Duangrawa, ...
Japanese Journal of Applied Physics 56 (6S2), 06HE06, 2017
32017
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