| Highly effective activation of Mg-implanted p-type GaN by ultra-high-pressure annealing H Sakurai, M Omori, S Yamada, Y Furukawa, H Suzuki, T Narita, ... Applied Physics Letters 115 (14), 2019 | 130 | 2019 |
| Hall-effect measurements of metalorganic vapor-phase epitaxy-grown p-type homoepitaxial GaN layers with various Mg concentrations M Horita, S Takashima, R Tanaka, H Matsuyama, K Ueno, M Edo, ... Japanese Journal of Applied Physics 56 (3), 031001, 2017 | 103 | 2017 |
| Thermal analysis of amorphous oxide thin-film transistor degraded by combination of joule heating and hot carrier effect S Urakawa, S Tomai, Y Ueoka, H Yamazaki, M Kasami, K Yano, D Wang, ... Applied Physics Letters 102 (5), 2013 | 101 | 2013 |
| Design and fabrication of GaN pn junction diodes with negative beveled-mesa termination T Maeda, T Narita, H Ueda, M Kanechika, T Uesugi, T Kachi, T Kimoto, ... IEEE Electron Device Letters 40 (6), 941-944, 2019 | 91 | 2019 |
| The origin of carbon-related carrier compensation in p-type GaN layers grown by MOVPE T Narita, K Tomita, Y Tokuda, T Kogiso, M Horita, T Kachi Journal of Applied Physics 124 (21), 2018 | 82 | 2018 |
| Progress on and challenges of p-type formation for GaN power devices T Narita, H Yoshida, K Tomita, K Kataoka, H Sakurai, M Horita, ... Journal of Applied Physics 128 (9), 2020 | 74 | 2020 |
| Sources of carrier compensation in metalorganic vapor phase epitaxy-grown homoepitaxial n-type GaN layers with various doping concentrations N Sawada, T Narita, M Kanechika, T Uesugi, T Kachi, M Horita, T Kimoto, ... Applied Physics Express 11 (4), 041001, 2018 | 72 | 2018 |
| Impact ionization coefficients and critical electric field in GaN T Maeda, T Narita, S Yamada, T Kachi, T Kimoto, M Horita, J Suda Journal of Applied Physics 129 (18), 2021 | 68 | 2021 |
| Temperature dependence of barrier height in Ni/n-GaN Schottky barrier diode T Maeda, M Okada, M Ueno, Y Yamamoto, T Kimoto, M Horita, J Suda Applied Physics Express 10 (5), 051002, 2017 | 58 | 2017 |
| Effect of contact material on amorphous InGaZnO thin-film transistor characteristics Y Ueoka, Y Ishikawa, JP Bermundo, H Yamazaki, S Urakawa, Y Osada, ... Japanese Journal of Applied Physics 53 (3S1), 03CC04, 2014 | 56 | 2014 |
| Low temperature high-mobility InZnO thin-film transistors fabricated by excimer laser annealing M Fujii, Y Ishikawa, R Ishihara, J van der Cingel, MRT Mofrad, M Horita, ... Applied Physics Letters 102 (12), 2013 | 52 | 2013 |
| Overview of carrier compensation in GaN layers grown by MOVPE: Toward the application of vertical power devices T Narita, K Tomita, K Kataoka, Y Tokuda, T Kogiso, H Yoshida, N Ikarashi, ... Japanese Journal of Applied Physics 59 (SA), SA0804, 2019 | 43 | 2019 |
| Resistive random access memory utilizing ferritin protein with Pt nanoparticles M Uenuma, K Kawano, B Zheng, N Okamoto, M Horita, S Yoshii, ... Nanotechnology 22 (21), 215201, 2011 | 43 | 2011 |
| High-quality nonpolar 4H-AlN grown on 4H-SiC (112¯) substrate by molecular-beam epitaxy M Horita, J Suda, T Kimoto Applied physics letters 89 (11), 2006 | 43 | 2006 |
| Deep-level transient spectroscopy studies of electron and hole traps in n-type GaN homoepitaxial layers grown by quartz-free hydride-vapor-phase epitaxy K Kanegae, H Fujikura, Y Otoki, T Konno, T Yoshida, M Horita, T Kimoto, ... Applied Physics Letters 115 (1), 2019 | 41 | 2019 |
| Redistribution of Mg and H atoms in Mg-implanted GaN through ultra-high-pressure annealing H Sakurai, T Narita, M Omori, S Yamada, A Koura, M Iwinska, K Kataoka, ... Applied Physics Express 13 (8), 086501, 2020 | 38 | 2020 |
| Guided filament formation in NiO-resistive random access memory by embedding gold nanoparticles M Uenuma, B Zheng, K Kawano, M Horita, Y Ishikawa, I Yamashita, ... Applied Physics Letters 100 (8), 2012 | 37 | 2012 |
| Density of states in amorphous In-Ga-Zn-O thin-film transistor under negative bias illumination stress Y Ueoka, Y Ishikawa, JP Bermundo, H Yamazaki, S Urakawa, M Fujii, ... ECS Journal of Solid State Science and Technology 3 (9), Q3001, 2014 | 35 | 2014 |
| Space charge profile study of AlGaN-based p-type distributed polarization doped claddings without impurity doping for UV-C laser diodes Z Zhang, M Kushimoto, M Horita, N Sugiyama, LJ Schowalter, C Sasaoka, ... Applied Physics Letters 117 (15), 2020 | 34 | 2020 |
| Identification of origin of EC–0.6 eV electron trap level by correlation with iron concentration in n-type GaN grown on GaN freestanding substrate by metalorganic vapor phase … M Horita, T Narita, T Kachi, J Suda Applied Physics Express 13 (7), 071007, 2020 | 33 | 2020 |
Suda JunNagoya University / Kyoto University確認したメール アドレス: nuee.nagoya-u.ac.jp
