| Ultrasonically guided subsegmentectomy. M Makuuchi, H Hasegawa, S Yamazaki Surgery, gynecology & obstetrics 161 (4), 346-350, 1985 | 1039 | 1985 |
| Properties of Microstrip Line on Si-SiO2 System H Hasegawa, M Furukawa, H Yanai IEEE Transactions on microwave theory and techniques 19 (11), 869-881, 1971 | 815 | 1971 |
| Unified disorder induced gap state model for insulator–semiconductor and metal–semiconductor interfaces H Hasegawa, H Ohno Journal of Vacuum Science & Technology B: Microelectronics Processing and …, 1986 | 595 | 1986 |
| Malignant transformation of adenomatous hyperplasia to hepatocellular carcinoma T Takayama, T Kosuge, S Yamazaki, H Hasegawa, N Okazaki, ... The Lancet 336 (8724), 1150-1153, 1990 | 529 | 1990 |
| Hepatocellular carcinoma: treatment with intraarterial iodized oil with and without chemotherapeutic agents. K Takayasu, Y Shima, Y Muramatsu, N Moriyama, T Yamada, M Makuuchi, ... Radiology 163 (2), 345-351, 1987 | 474 | 1987 |
| Cyclotron resonance in uniaxially stressed silicon. II. Nature of the covalent bond JC Hensel, H Hasegawa, M Nakayama Physical Review 138 (1A), A225, 1965 | 422 | 1965 |
| The diagnosis of small hepatocellular carcinomas: efficacy of various imaging procedures in 100 patients. K Takayasu, N Moriyama, Y Muramatsu, M Makuuchi, H Hasegawa, ... AJR. American journal of roentgenology 155 (1), 49-54, 1990 | 397 | 1990 |
| Suppression of current collapse in insulated gate AlGaN/GaN heterostructure field-effect transistors using ultrathin dielectric T Hashizume, S Ootomo, H Hasegawa Applied physics letters 83 (14), 2952-2954, 2003 | 323 | 2003 |
| Anodic oxidation of GaAs in mixed solutions of glycol and water H Hasegawa, HL Hartnagel Journal of The Electrochemical Society 123 (5), 713, 1976 | 306 | 1976 |
| Mechanisms of current collapse and gate leakage currents in AlGaN/GaN heterostructure field effect transistors H Hasegawa, T Inagaki, S Ootomo, T Hashizume Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2003 | 298 | 2003 |
| Surface passivation of GaN and GaN/AlGaN heterostructures by dielectric films and its application to insulated-gate heterostructure transistors T Hashizume, S Ootomo, T Inagaki, H Hasegawa Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2003 | 291 | 2003 |
| Minority carrier diffusion length in GaN: Dislocation density and doping concentration dependence K Kumakura, T Makimoto, N Kobayashi, T Hashizume, T Fukui, ... Applied Physics Letters 86 (5), 2005 | 284 | 2005 |
| On the electrical properties of compound semiconductor interfaces in metal/insulator/semiconductor structures and the possible origin of interface states H Hasegawa, T Sawada Thin Solid Films 103 (1-3), 119-140, 1983 | 270 | 1983 |
| Leakage mechanism in GaN and AlGaN Schottky interfaces T Hashizume, J Kotani, H Hasegawa Applied Physics Letters 84 (24), 4884-4886, 2004 | 245 | 2004 |
| Effects of nitrogen deficiency on electronic properties of AlGaN surfaces subjected to thermal and plasma processes T Hashizume, H Hasegawa Applied surface science 234 (1-4), 387-394, 2004 | 206 | 2004 |
| Chemistry and electrical properties of surfaces of GaN and GaN/AlGaN heterostructures T Hashizume, S Ootomo, S Oyama, M Konishi, H Hasegawa Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2001 | 202 | 2001 |
| Angiography of small hepatocellular carcinomas: analysis of 105 resected tumors K Takayasu, Y Shima, Y Muramatsu, H Goto, N Moriyama, T Yamada, ... American Journal of Roentgenology 147 (3), 525-529, 1986 | 198 | 1986 |
| Bile duct necrosis: complication of transcatheter hepatic arterial embolization. M Makuuchi, M Sukigara, T Mori, J Kobayashi, S Yamazaki, H Hasegawa, ... Radiology 156 (2), 331-334, 1985 | 190 | 1985 |
| Mechanism of anomalous current transport in n-type GaN Schottky contacts H Hasegawa, S Oyama Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2002 | 188 | 2002 |
| Evidence for the in the reaction by detecting pairs T Nakano, N Muramatsu, DS Ahn, JK Ahn, H Akimune, Y Asano, ... Physical Review C 79 (2), 025210, 2009 | 185 | 2009 |
Nanjian WuInstitute of Semiconductors確認したメール アドレス: red.semi.ac.cn
