フォロー
Dominik Martin
Dominik Martin
Ferdinand-Braun-Institut
確認したメール アドレス: alumni.tu-berlin.de
タイトル
引用先
引用先
Ferroelectric hafnium oxide: A CMOS-compatible and highly scalable approach to future ferroelectric memories
J Müller, TS Böscke, S Müller, E Yurchuk, P Polakowski, J Paul, D Martin, ...
2013 IEEE International Electron Devices Meeting, 10.8. 1-10.8. 4, 2013
4462013
Impact of different dopants on the switching properties of ferroelectric hafniumoxide
U Schroeder, E Yurchuk, J Müller, D Martin, T Schenk, P Polakowski, ...
Japanese Journal of Applied Physics 53 (8S1), 08LE02, 2014
3782014
Ferroelectricity in HfO2 enables nonvolatile data storage in 28 nm HKMG
J Müller, E Yurchuk, T Schlösser, J Paul, R Hoffmann, S Müller, D Martin, ...
2012 symposium on VLSI technology (VLSIT), 25-26, 2012
2952012
Co-sputtering yttrium into hafnium oxide thin films to produce ferroelectric properties
T Olsen, U Schröder, S Müller, A Krause, D Martin, A Singh, J Müller, ...
Applied Physics Letters 101 (8), 2012
1952012
Ferroelectricity in Si‐doped HfO2 Revealed: A Binary Lead‐free Ferroelectric
D Martin, J Müller, T Schenk, TM Arruda, A Kumar, E Strelcov, E Yurchuk, ...
Advanced Materials 26 (48), 8198, 2014
1792014
Impact of Scaling on the Performance of HfO2-Based Ferroelectric Field Effect Transistors
E Yurchuk, J Müller, J Paul, T Schlösser, D Martin, R Hoffmann, S Müeller, ...
IEEE Transactions on Electron Devices 61 (11), 3699-3706, 2014
1732014
Hafnium oxide based CMOS compatible ferroelectric materials
U Schroeder, S Mueller, J Mueller, E Yurchuk, D Martin, C Adelmann, ...
ECS Journal of Solid State Science and Technology 2 (4), N69, 2013
1362013
Hafnium oxide based CMOS compatible ferroelectric materials
U Schroeder, S Mueller, J Mueller, E Yurchuk, D Martin, C Adelmann, ...
ECS Journal of Solid State Science and Technology 2 (4), N69, 2013
1362013
Origin of the endurance degradation in the novel HfO2-based 1T ferroelectric non-volatile memories
E Yurchuk, S Mueller, D Martin, S Slesazeck, U Schroeder, T Mikolajick, ...
2014 IEEE International Reliability Physics Symposium, 2E. 5.1-2E. 5.5, 2014
1132014
Reconfigurable nanowire electronics–a review
WM Weber, A Heinzig, J Trommer, D Martin, M Grube, T Mikolajick
Solid-State Electronics 102, 12-24, 2014
1042014
Direct probing of Schottky barriers in Si nanowire Schottky barrier field effect transistors
D Martin, A Heinzig, M Grube, L Geelhaar, T Mikolajick, H Riechert, ...
Physical review letters 107 (21), 216807, 2011
552011
Mesoscopic analysis of leakage current suppression in ZrO2/Al2O3/ZrO2 nano-laminates
D Martin, M Grube, W Weinreich, J Müller, WM Weber, U Schröder, ...
Journal of Applied Physics 113 (19), 2013
542013
Filamentary resistive switching in amorphous and polycrystalline Nb2O5 thin films
H Mähne, L Berger, D Martin, V Klemm, S Slesazeck, S Jakschik, ...
Solid-state electronics 72, 73-77, 2012
492012
Impact of carrier nonpinning effect on thermal power saturation in GaAs-based high power diode lasers
T Kaul, G Erbert, A Klehr, A Maaßdorf, D Martin, P Crump
IEEE Journal of Selected Topics in Quantum Electronics 25 (6), 1-10, 2019
482019
Downscaling ferroelectric field effect transistors by using ferroelectric Si-doped HfO2
D Martin, E Yurchuk, S Müller, J Müller, J Paul, J Sundquist, S Slesazeck, ...
Solid-state electronics 88, 65-68, 2013
472013
HfO2-based Ferroelectric Field-Effect Transistors with 260 nm channel length and long data retention
E Yurchuk, J Muller, R Hoffmann, J Paul, D Martin, R Boschke, ...
2012 4th IEEE International Memory Workshop, 1-4, 2012
382012
Novel 900 nm diode lasers with epitaxially stacked multiple active regions and tunnel junctions
H Wenzel, A Maaßdorf, C Zink, D Martin, M Weyers, A Knigge
Electronics Letters 57 (11), 445-447, 2021
212021
Extreme triple asymmetric (ETAS) epitaxial designs for increased efficiency at high powers in 9xx-nm diode lasers
T Kaul, G Erbert, A Maaßdorf, D Martin, P Crump
High-Power Diode Laser Technology XVI 10514, 53-59, 2018
212018
Macroscopic and microscopic electrical characterizations of high-k ZrO2 and ZrO2/Al2O3/ZrO2 metal-insulator-metal structures
D Martin, M Grube, W Weinreich, J Müller, L Wilde, E Erben, WM Weber, ...
Journal of Vacuum Science & Technology B 29 (1), 2011
192011
Local charge transport in nanoscale amorphous and crystalline regions of high-k (Zr2) 0.8 (Al2O3) 0.2 thin films
D Martin, M Grube, WM Weber, J Rüstig, O Bierwagen, L Geelhaar, ...
Applied Physics Letters 95 (14), 2009
172009
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