| Ferroelectric hafnium oxide: A CMOS-compatible and highly scalable approach to future ferroelectric memories J Müller, TS Böscke, S Müller, E Yurchuk, P Polakowski, J Paul, D Martin, ... 2013 IEEE International Electron Devices Meeting, 10.8. 1-10.8. 4, 2013 | 508 | 2013 |
| Impact of different dopants on the switching properties of ferroelectric hafniumoxide U Schroeder, E Yurchuk, J Müller, D Martin, T Schenk, P Polakowski, ... Japanese Journal of Applied Physics 53 (8S1), 08LE02, 2014 | 404 | 2014 |
| Ferroelectricity in HfO2 enables nonvolatile data storage in 28 nm HKMG J Müller, E Yurchuk, T Schlösser, J Paul, R Hoffmann, S Müller, D Martin, ... 2012 symposium on VLSI technology (VLSIT), 25-26, 2012 | 327 | 2012 |
| Co-sputtering yttrium into hafnium oxide thin films to produce ferroelectric properties T Olsen, U Schröder, S Müller, A Krause, D Martin, A Singh, J Müller, ... Applied Physics Letters 101 (8), 2012 | 210 | 2012 |
| Ferroelectricity in Si‐doped HfO2 Revealed: A Binary Lead‐free Ferroelectric D Martin, J Müller, T Schenk, TM Arruda, A Kumar, E Strelcov, E Yurchuk, ... Advanced Materials 26 (48), 8198, 2014 | 188 | 2014 |
| Impact of Scaling on the Performance of HfO2-Based Ferroelectric Field Effect Transistors E Yurchuk, J Müller, J Paul, T Schlösser, D Martin, R Hoffmann, S Müeller, ... IEEE Transactions on Electron Devices 61 (11), 3699-3706, 2014 | 184 | 2014 |
| Hafnium oxide based CMOS compatible ferroelectric materials U Schroeder, S Mueller, J Mueller, E Yurchuk, D Martin, C Adelmann, ... ECS Journal of Solid State Science and Technology 2 (4), N69, 2013 | 143 | 2013 |
| Origin of the endurance degradation in the novel HfO2-based 1T ferroelectric non-volatile memories E Yurchuk, S Mueller, D Martin, S Slesazeck, U Schroeder, T Mikolajick, ... 2014 IEEE International Reliability Physics Symposium, 2E. 5.1-2E. 5.5, 2014 | 129 | 2014 |
| Reconfigurable nanowire electronics–a review WM Weber, A Heinzig, J Trommer, D Martin, M Grube, T Mikolajick Solid-State Electronics 102, 12-24, 2014 | 111 | 2014 |
| Mesoscopic analysis of leakage current suppression in ZrO2/Al2O3/ZrO2 nano-laminates D Martin, M Grube, W Weinreich, J Müller, WM Weber, U Schröder, ... Journal of Applied Physics 113 (19), 2013 | 59 | 2013 |
| Direct probing of Schottky barriers in Si nanowire Schottky barrier field effect transistors D Martin, A Heinzig, M Grube, L Geelhaar, T Mikolajick, H Riechert, ... Physical review letters 107 (21), 216807, 2011 | 56 | 2011 |
| Impact of carrier nonpinning effect on thermal power saturation in GaAs-based high power diode lasers T Kaul, G Erbert, A Klehr, A Maaßdorf, D Martin, P Crump IEEE Journal of Selected Topics in Quantum Electronics 25 (6), 1-10, 2019 | 54 | 2019 |
| Filamentary resistive switching in amorphous and polycrystalline Nb2O5 thin films H Mähne, L Berger, D Martin, V Klemm, S Slesazeck, S Jakschik, ... Solid-state electronics 72, 73-77, 2012 | 52 | 2012 |
| Downscaling ferroelectric field effect transistors by using ferroelectric Si-doped HfO2 D Martin, E Yurchuk, S Müller, J Müller, J Paul, J Sundquist, S Slesazeck, ... Solid-state electronics 88, 65-68, 2013 | 49 | 2013 |
| HfO2-based Ferroelectric Field-Effect Transistors with 260 nm channel length and long data retention E Yurchuk, J Muller, R Hoffmann, J Paul, D Martin, R Boschke, ... 2012 4th IEEE International Memory Workshop, 1-4, 2012 | 40 | 2012 |
| IEEE International Electron Devices Meeting J Müller, TS Böscke, S Müller, E Yurchuk, P Polakowski, J Paul, D Martin, ... Washington, DC, USA 10, 1-10.8, 2013 | 32 | 2013 |
| Extreme triple asymmetric (ETAS) epitaxial designs for increased efficiency at high powers in 9xx-nm diode lasers T Kaul, G Erbert, A Maaßdorf, D Martin, P Crump High-Power Diode Laser Technology XVI 10514, 53-59, 2018 | 25 | 2018 |
| Experimental studies into the beam parameter product of GaAs high-power diode lasers P Crump, M Elattar, MJ Miah, M Ekterai, MM Karow, D Martin, A Maaßdorf, ... IEEE Journal of Selected Topics in Quantum Electronics 28 (1: Semiconductor …, 2021 | 23 | 2021 |
| Novel 900 nm diode lasers with epitaxially stacked multiple active regions and tunnel junctions H Wenzel, A Maaßdorf, C Zink, D Martin, M Weyers, A Knigge Electronics Letters 57 (11), 445-447, 2021 | 22 | 2021 |
| Epitaxial design progress for high power, efficiency, and brightness in 970 nm broad area lasers A Boni, S Arslan, G Erbert, P Della Casa, D Martin, P Crump High-Power Diode Laser Technology XIX 11668, 15-22, 2021 | 20 | 2021 |
Thomas MikolajickScientific Director, NaMLab GmbH and Professor for Nanoelectronics, TU Dresden確認したメール アドレス: namlab.com
