| Strong Enhancement of Raman Scattering from a Bulk-Inactive Vibrational Mode in Few-Layer MoTe2 M Yamamoto, ST Wang, M Ni, YF Lin, SL Li, S Aikawa, WB Jian, K Ueno, ... Acs Nano 8 (4), 3895-3903, 2014 | 233 | 2014 |
| Self-Limiting Layer-by-Layer Oxidation of Atomically Thin WSe2 M Yamamoto, S Dutta, S Aikawa, S Nakaharai, K Wakabayashi, ... Nano letters 15 (3), 2067-2073, 2015 | 150 | 2015 |
| Enhanced thermal conductivity of ethylene glycol with single-walled carbon nanotube inclusions S Harish, K Ishikawa, E Einarsson, S Aikawa, S Chiashi, J Shiomi, ... International Journal of heat and mass transfer 55 (13-14), 3885-3890, 2012 | 127 | 2012 |
| Effects of dopants in InOx-based amorphous oxide semiconductors for thin-film transistor applications S Aikawa, T Nabatame, K Tsukagoshi Applied Physics Letters 103 (17), 172105, 2013 | 93 | 2013 |
| Stable amorphous In2O3-based thin-film transistors by incorporating SiO2 to suppress oxygen vacancies N Mitoma, S Aikawa, X Gao, T Kizu, M Shimizu, MF Lin, T Nabatame, ... Applied Physics Letters 104 (10), 102103, 2014 | 84 | 2014 |
| Diameter-controlled and nitrogen-doped vertically aligned single-walled carbon nanotubes T Thurakitseree, C Kramberger, P Zhao, S Aikawa, S Harish, S Chiashi, ... Carbon 50 (7), 2635-2640, 2012 | 70 | 2012 |
| Low-temperature processable amorphous In-WO thin-film transistors with high mobility and stability T Kizu, S Aikawa, N Mitoma, M Shimizu, X Gao, MF Lin, T Nabatame, ... Applied Physics Letters 104 (15), 152103, 2014 | 68 | 2014 |
| Thin-film transistors fabricated by low-temperature process based on Ga-and Zn-free amorphous oxide semiconductor S Aikawa, P Darmawan, K Yanagisawa, T Nabatame, Y Abe, ... Applied Physics Letters 102 (10), 102101, 2013 | 64 | 2013 |
| Temperature dependent thermal conductivity increase of aqueous nanofluid with single walled carbon nanotube inclusion S Harish, K Ishikawa, E Einarsson, S Aikawa, T Inoue, P Zhao, ... Materials Express 2 (3), 213-223, 2012 | 60 | 2012 |
| Deformable transparent all-carbon-nanotube transistors S Aikawa, E Einarsson, T Thurakitseree, S Chiashi, E Nishikawa, ... Applied Physics Letters 100 (6), 063502, 2012 | 49 | 2012 |
| Dopant selection for control of charge carrier density and mobility in amorphous indium oxide thin-film transistors: Comparison between Si-and W-dopants N Mitoma, S Aikawa, W Ou-Yang, X Gao, T Kizu, MF Lin, A Fujiwara, ... Applied Physics Letters 106 (4), 042106, 2015 | 46 | 2015 |
| Effect of gas pressure on the density of horizontally aligned single-walled carbon nanotubes grown on quartz substrates T Inoue, D Hasegawa, S Badar, S Aikawa, S Chiashi, S Maruyama The Journal of Physical Chemistry C 117 (22), 11804-11810, 2013 | 29 | 2013 |
| Catalytic graphitization of an amorphous carbon film under focused electron beam irradiation due to the presence of sputtered nickel metal particles S Aikawa, T Kizu, E Nishikawa Carbon 48 (10), 2997-2999, 2010 | 27 | 2010 |
| Suppression of excess oxygen for environmentally stable amorphous In-Si-O thin-film transistors S Aikawa, N Mitoma, T Kizu, T Nabatame, K Tsukagoshi Applied Physics Letters 106 (19), 192103, 2015 | 25 | 2015 |
| Diameter controlled chemical vapor deposition synthesis of single-walled carbon nanotubes T Thurakitseree, E Einarsson, R Xiang, P Zhao, S Aikawa, S Chiashi, ... Journal of nanoscience and nanotechnology 12 (1), 370-376, 2012 | 25 | 2012 |
| Highly stable and tunable n-type graphene field-effect transistors with poly (vinyl alcohol) films S Kim, P Zhao, S Aikawa, E Einarsson, S Chiashi, S Maruyama ACS applied materials & interfaces 7 (18), 9702-9708, 2015 | 23 | 2015 |
| Facile fabrication of all-SWNT field-effect transistors S Aikawa, R Xiang, E Einarsson, S Chiashi, J Shiomi, E Nishikawa, ... Nano Research 4 (6), 580-588, 2011 | 18 | 2011 |
| Self-formed copper oxide contact interlayer for high-performance oxide thin film transistors X Gao, S Aikawa, N Mitoma, MF Lin, T Kizu, T Nabatame, K Tsukagoshi Applied Physics Letters 105 (2), 023503, 2014 | 17 | 2014 |
| Homogeneous double-layer amorphous Si-doped indium oxide thin-film transistors for control of turn-on voltage T Kizu, S Aikawa, T Nabatame, A Fujiwara, K Ito, M Takahashi, ... Journal of Applied Physics 120 (4), 045702, 2016 | 16 | 2016 |
| Reduction of the interfacial trap density of indium-oxide thin film transistors by incorporation of hafnium and annealing process MF Lin, X Gao, N Mitoma, T Kizu, W Ou-Yang, S Aikawa, T Nabatame, ... AIP Advances 5 (1), 017116, 2015 | 12 | 2015 |
