フォロー
Sarit Dhar
Sarit Dhar
Professor of Physics, Auburn University
確認したメール アドレス: auburn.edu
タイトル
引用先
引用先
Modified Deal Grove model for the thermal oxidation of silicon carbide
Y Song, S Dhar, LC Feldman, G Chung, JR Williams
Journal of Applied Physics 95 (9), 4953-4957, 2004
3102004
Silicon carbide: A unique platform for metal-oxide-semiconductor physics
G Liu, BR Tuttle, S Dhar
Applied Physics Reviews 2 (2), 2015
2912015
Bonding at the Interface and the Effects of Nitrogen and Hydrogen
S Wang, S Dhar, S Wang, AC Ahyi, A Franceschetti, JR Williams, ...
Physical review letters 98 (2), 026101, 2007
2292007
Density of interface states, electron traps, and hole traps as a function of the nitrogen density in SiO2 on SiC
J Rozen, S Dhar, ME Zvanut, JR Williams, LC Feldman
Journal of Applied Physics 105 (12), 2009
2052009
Role of self-trapped holes in the photoconductive gain of β-gallium oxide Schottky diodes
AM Armstrong, MH Crawford, A Jayawardena, A Ahyi, S Dhar
Journal of Applied Physics 119 (10), 2016
1782016
Inversion layer carrier concentration and mobility in 4H–SiC metal-oxide-semiconductor field-effect transistors
S Dhar, S Haney, L Cheng, SR Ryu, AK Agarwal, LC Yu, KP Cheung
Journal of Applied Physics 108 (5), 2010
1362010
Enhanced Inversion Mobility on 4H-SiCUsing Phosphorus and Nitrogen Interface Passivation
G Liu, AC Ahyi, Y Xu, T Isaacs-Smith, YK Sharma, JR Williams, ...
IEEE Electron Device Letters 34 (2), 181-183, 2013
1292013
Chemical properties of oxidized silicon carbide surfaces upon etching in hydrofluoric acid
S Dhar, O Seitz, MD Halls, S Choi, YJ Chabal, LC Feldman
Journal of the American Chemical Society 131 (46), 16808-16813, 2009
1262009
Interface passivation for silicon dioxide layers on silicon carbide
S Dhar, S Wang, JR Williams, ST Pantelides, LC Feldman
MRS bulletin 30 (4), 288-292, 2005
1112005
Effect of nitric oxide annealing on the interface trap density near the conduction bandedge of 4H–SiC at the 4H–SiC interface
S Dhar, YW Song, LC Feldman, T Isaacs-Smith, CC Tin, JR Williams, ...
Applied physics letters 84 (9), 1498-1500, 2004
1062004
Interface trap passivation for SiO2∕(0001) C-terminated 4H-SiC
S Dhar, LC Feldman, S Wang, T Isaacs-Smith, JR Williams
Journal of Applied Physics 98 (1), 2005
1022005
High-mobility stable 4H-SiC MOSFETs using a thin PSG interfacial passivation layer
YK Sharma, AC Ahyi, T Isaacs-Smith, A Modic, M Park, Y Xu, ...
IEEE Electron Device Letters 34 (2), 175-177, 2013
942013
Delivery of lethal dsRNAs in insect diets by branched amphiphilic peptide capsules
LA Avila, R Chandrasekar, KE Wilkinson, J Balthazor, M Heerman, ...
Journal of controlled release 273, 139-146, 2018
872018
High mobility 4H-SiC (0001) transistors using alkali and alkaline earth interface layers
DJ Lichtenwalner, L Cheng, S Dhar, A Agarwal, JW Palmour
Applied Physics Letters 105 (18), 2014
872014
Increase in oxide hole trap density associated with nitrogen incorporation at the SiO2/SiC interface
J Rozen, S Dhar, SK Dixit, VV Afanas’ev, FO Roberts, HL Dang, S Wang, ...
Journal of Applied Physics 103 (12), 2008
852008
Electron capture and emission properties of interface states in thermally oxidized and NO-annealed SiO2/4H-SiC
XD Chen, S Dhar, T Isaacs-Smith, JR Williams, LC Feldman, PM Mooney
Journal of Applied Physics 103 (3), 2008
722008
Si/SiO2 and SiC/SiO2 Interfaces for MOSFETs – Challenges and Advances
ST Pantelides, S Wang, A Franceschetti, R Buczko, M Di Ventra, ...
Materials science forum 527, 935-948, 2006
722006
High channel mobility 4H-SiC MOSFETs by antimony counter-doping
A Modic, G Liu, AC Ahyi, Y Zhou, P Xu, MC Hamilton, JR Williams, ...
IEEE Electron Device Letters 35 (9), 894-896, 2014
712014
Pressure dependence of SiO2 growth kinetics and electrical properties on SiC
EA Ray, J Rozen, S Dhar, LC Feldman, JR Williams
Journal of Applied Physics 103 (2), 2008
682008
High-resolution elemental profiles of the silicon dioxide∕ 4H-silicon carbide interface
KC Chang, Y Cao, LM Porter, J Bentley, S Dhar, LC Feldman, JR Williams
Journal of applied physics 97 (10), 2005
682005
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論文 1–20