TABATA Toshiyuki
TABATA Toshiyuki
Process Technologist at Laser Systems & Solutions of Europe (LASSE)
確認したメール アドレス: screen-lasse.com
タイトル
引用先
引用先
Desorption kinetics of GeO from GeO2/Ge structure
SK Wang, K Kita, CH Lee, T Tabata, T Nishimura, K Nagashio, A Toriumi
Journal of applied physics 108 (5), 054104, 2010
1632010
Opportunities and challenges for Ge CMOS–Control of interfacing field on Ge is a key
A Toriumi, T Tabata, CH Lee, T Nishimura, K Kita, K Nagashio
Microelectronic Engineering 86 (7), 1571-1576, 2009
1632009
Ge/GeO2 interface control with high pressure oxidation for improving electrical characteristics
CH Lee, T Tabata, T Nishimura, K Nagashio, K Kita, A Toriumi
ECS Transactions 19 (1), 165-173, 2009
1622009
Ge MOSFETs performance: Impact of Ge interface passivation
CH Lee, T Nishimura, T Tabata, SK Wang, K Nagashio, K Kita, A Toriumi
Electron Devices Meeting (IEDM), 2010 IEEE International, 18.1. 1-18.1. 4, 2010
1062010
High-Electron-Mobility Ge n-Channel Metal–Oxide–Semiconductor Field-Effect Transistors with High-Pressure Oxidized Y2O3
T Nishimura, CH Lee, T Tabata, SK Wang, K Nagashio, K Kita, A Toriumi
Applied physics express 4 (6), 064201, 2011
862011
Material potential and scalability challenges of germanium CMOS
A Toriumi, CH Lee, SK Wang, T Tabata, M Yoshida, DD Zhao, ...
Electron Devices Meeting (IEDM), 2011 IEEE International, 28.4. 1-28.4. 4, 2011
502011
Characterization of electron mobility in ultrathin body germanium-on-insulator metal-insulator-semiconductor field-effect transistors
CH Lee, T Nishimura, T Tabata, DD Zhao, K Nagashio, A Toriumi
Applied Physics Letters 102 (23), 232107, 2013
482013
Oxygen potential engineering of interfacial layer for deep sub-nm EOT high-k gate stacks on Ge
CH Lee, C Lu, T Tabata, WF Zhang, T Nishimura, K Nagashio, A Toriumi
Electron Devices Meeting (IEDM), 2013 IEEE International, 2.5. 1-2.5. 4, 2013
332013
Impact of High Pressure O2 Annealing on Amorphous LaLuO3/Ge MIS Capacitors
T Tabata, CH Lee, K Kita, A Toriumi
ECS Transactions 16 (5), 479-486, 2008
272008
Enhancement of high-N s electron mobility in sub-nm EOT Ge n-MOSFETs
CH Lee, C Lu, T Tabata, T Nishimura, K Nagashio, A Toriumi
VLSI Technology (VLSIT), 2013 Symposium on, T28-T29, 2013
262013
Semiconductor structure having aluminum oxynitride film on germanium layer and method of fabricating the same
A Toriumi, T Tabata
US Patent 9,306,026, 2016
192016
Reconsideration of electron mobility in Ge n-MOSFETs from Ge substrate side—Atomically flat surface formation, layer-by-layer oxidation, and dissolved oxygen extraction
CH Lee, T Nishimura, T Tabata, C Lu, WF Zhang, K Nagashio, A Toriumi
Electron Devices Meeting (IEDM), 2013 IEEE International, 2.3. 1-2.3. 4, 2013
192013
Doping of semiconductor devices by Laser Thermal Annealing
K Huet, F Mazzamuto, T Tabata, I Toqué-Tresonne, Y Mori
Materials Science in Semiconductor Processing 62, 92-102, 2017
172017
Recent Progress of Germanium Gate Stack Technology
A Toriumi, CH Lee, T Tabata, S Wang, D Zhao, T Nishimura, K Kita, ...
Silicon-Germanium Technology and Device Meeting (ISTDM), 2012 International, 1-2, 2012
16*2012
Experimental study of carrier transport in ultra-thin body GeOI MOSFETs
CH Lee, T Nishimura, T Tabata, D Zhao, R Ifuku, K Nagashio, K Kita, ...
IEEE 2011 International SOI Conference, 2011
142011
Oxidation Rate Reduction of Ge with O2 Pressure Increase
CH Lee, T Tabata, T Nishimura, K Nagashio, A Toriumi
Applied Physics Express 5 (11), 114001, 2012
132012
Variation of Surface Roughness on Ge Substrate by Cleaning in Deionized Water and its Influence on Electrical Properties in Ge Metal–Oxide–Semiconductor Field-Effect Transistors
CH Lee, T Nishimura, T Tabata, K Nagashio, K Kita, A Toriumi
Japanese Journal of Applied Physics 51 (10R), 104203, 2012
122012
Electron mobility in high-k Ge-MISFETs goes up to higher
T Nishimura, CH Lee, SK Wang, T Tabata, K Kita, K Nagashio, A Toriumi
2010 Symposium on VLSI Technology, 2010
122010
Direct LaLuO3/Ge gate stack formation by interface layer scavenging and subsequent low temperature O2 annealing
T Tabata, CH Lee, K Kita, A Toriumi
ECS Transactions 33 (3), 375-382, 2010
92010
Segregation and activation of Ga in high Ge content SiGe by UV melt laser anneal
T Tabata, J Aubin, K Huet, F Mazzamuto
Journal of Applied Physics 125 (21), 215702, 2019
42019
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