フォロー
TABATA Toshiyuki
TABATA Toshiyuki
WORMSENSING (startup from CEA-Leti)
確認したメール アドレス: wormsensing.com
タイトル
引用先
引用先
Desorption kinetics of GeO from GeO2/Ge structure
SK Wang, K Kita, CH Lee, T Tabata, T Nishimura, K Nagashio, A Toriumi
Journal of Applied Physics 108 (5), 054104, 2010
2092010
Ge/GeO2 interface control with high pressure oxidation for improving electrical characteristics
CH Lee, T Tabata, T Nishimura, K Nagashio, K Kita, A Toriumi
ECS Transactions 19 (1), 165-173, 2009
1852009
Opportunities and challenges for Ge CMOS–Control of interfacing field on Ge is a key
A Toriumi, T Tabata, CH Lee, T Nishimura, K Kita, K Nagashio
Microelectronic Engineering 86 (7), 1571-1576, 2009
1792009
Ge MOSFETs performance: Impact of Ge interface passivation
CH Lee, T Nishimura, T Tabata, SK Wang, K Nagashio, K Kita, A Toriumi
2010 IEEE International Electron Devices Meeting (IEDM), 416-419, 2010
1072010
High-Electron-Mobility Ge n-Channel Metal–Oxide–Semiconductor Field-Effect Transistors with High-Pressure Oxidized Y2O3
T Nishimura, CH Lee, T Tabata, SK Wang, K Nagashio, K Kita, A Toriumi
Applied Physics Express 4 (6), 064201, 2011
962011
Material potential and scalability challenges of germanium CMOS
A Toriumi, CH Lee, SK Wang, T Tabata, M Yoshida, DD Zhao, ...
2011 IEEE International Electron Devices Meeting (IEDM), 646-649, 2011
582011
Characterization of electron mobility in ultrathin body germanium-on-insulator metal-insulator-semiconductor field-effect transistors
CH Lee, T Nishimura, T Tabata, DD Zhao, K Nagashio, A Toriumi
Applied Physics Letters 102 (23), 232107, 2013
552013
Oxygen potential engineering of interfacial layer for deep sub-nm EOT high-k gate stacks on Ge
CH Lee, C Lu, T Tabata, WF Zhang, T Nishimura, K Nagashio, A Toriumi
2013 IEEE International Electron Devices Meeting (IEDM), 40-43, 2013
522013
Doping of semiconductor devices by Laser Thermal Annealing (review article)
K Huet, F Mazzamuto, T Tabata, I Toqué-Tresonne, Y Mori
Materials Science in Semiconductor Processing 62, 92-102, 2017
492017
Semiconductor structure having aluminum oxynitride film on germanium layer and method of fabricating the same
A Toriumi, T Tabata
US Patent 9,306,026, 2016
392016
Enhancement of high-N s electron mobility in sub-nm EOT Ge n-MOSFETs
CH Lee, C Lu, T Tabata, T Nishimura, K Nagashio, A Toriumi
2013 IEEE Symposium on VLSI Technology (VLSI), T28-T29, 2013
352013
Impact of High Pressure O2 Annealing on Amorphous LaLuO3/Ge MIS Capacitors
T Tabata, CH Lee, K Kita, A Toriumi
ECS Transactions 16 (5), 479-486, 2008
272008
Segregation and activation of Ga in high Ge content SiGe by UV melt laser anneal (editor's pick)
T Tabata, J Aubin, K Huet, F Mazzamuto
Journal of Applied Physics 125 (21), 215702, 2019
212019
3D sequential low temperature top tier devices using dopant activation with excimer laser anneal and strained silicon as performance boosters
A Vandooren, Z Wu, N Parihar, J Franco, B Parvais, P Matagne, ...
2020 IEEE Symposium on VLSI Technology (VLSI), TH3.2, 2020
202020
Reconsideration of electron mobility in Ge n-MOSFETs from Ge substrate side—Atomically flat surface formation, layer-by-layer oxidation, and dissolved oxygen extraction
CH Lee, T Nishimura, T Tabata, C Lu, WF Zhang, K Nagashio, A Toriumi
2013 IEEE International Electron Devices Meeting (IEDM), 32-35, 2013
192013
Recent Progress of Germanium Gate Stack Technology
A Toriumi, CH Lee, T Tabata, S Wang, D Zhao, T Nishimura, K Kita, ...
2012 IEEE International Silicon-Germanium Technology and Device Meeting (ISTDM), 2012
19*2012
Oxidation Rate Reduction of Ge with O2 Pressure Increase
CH Lee, T Tabata, T Nishimura, K Nagashio, A Toriumi
Applied Physics Express 5 (11), 114001, 2012
162012
Experimental study of carrier transport in ultra-thin body GeOI MOSFETs
CH Lee, T Nishimura, T Tabata, D Zhao, R Ifuku, K Nagashio, K Kita, ...
2011 IEEE International SOI Conference (SOI), 2011
152011
Nucleation and crystal growth in HfO2 thin films by UV nanosecond pulsed laser annealing
T Tabata
Applied Physics Express 13 (1), 015509, 2019
132019
Variation of Surface Roughness on Ge Substrate by Cleaning in Deionized Water and its Influence on Electrical Properties in Ge Metal–Oxide–Semiconductor Field-Effect Transistors
CH Lee, T Nishimura, T Tabata, K Nagashio, K Kita, A Toriumi
Japanese Journal of Applied Physics 51 (10R), 104203, 2012
122012
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