フォロー
Filip Tuomisto
Filip Tuomisto
確認したメール アドレス: helsinki.fi
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引用先
引用先
Defect identification in semiconductors with positron annihilation: Experiment and theory
F Tuomisto, I Makkonen
Reviews of Modern Physics 85 (4), 1583-1631, 2013
7372013
Evidence of the Zn vacancy acting as the dominant acceptor in n-type ZnO
F Tuomisto, V Ranki, K Saarinen, DC Look
Physical Review Letters 91 (20), 205502, 2003
5652003
Introduction and recovery of point defects in electron-irradiated ZnO
F Tuomisto, K Saarinen, DC Look, GC Farlow
Physical Review B 72 (8), 085206, 2005
4092005
Self-compensation in semiconductors: The Zn vacancy in Ga-doped ZnO
DC Look, KD Leedy, L Vines, BG Svensson, A Zubiaga, F Tuomisto, ...
Physical Review B 84 (11), 115202, 2011
2242011
Electrical compensation by Ga vacancies in Ga2O3 thin films
E Korhonen, F Tuomisto, D Gogova, G Wagner, M Baldini, Z Galazka, ...
Applied Physics Letters 106 (24), 2015
1892015
Zinc vacancy and oxygen interstitial in ZnO revealed by sequential annealing and electron irradiation
KE Knutsen, A Galeckas, A Zubiaga, F Tuomisto, GC Farlow, ...
Physical Review B 86 (12), 121203, 2012
1792012
Vacancy defect and defect cluster energetics in ion-implanted ZnO
Y Dong, F Tuomisto, BG Svensson, AY Kuznetsov, LJ Brillson
Physical Review B 81 (8), 081201, 2010
1512010
Effect of growth polarity on vacancy defect and impurity incorporation in dislocation-free GaN
F Tuomisto, K Saarinen, B Lucznik, I Grzegory, H Teisseyre, T Suski, ...
Applied Physics Letters 86 (3), 2005
1272005
Hierarchical porosity in self‐assembled polymers: post‐modification of block copolymer–phenolic resin complexes by pyrolysis allows the control of micro‐and mesoporosity
S Valkama, A Nykänen, H Kosonen, R Ramani, F Tuomisto, P Engelhardt, ...
Advanced Functional Materials 17 (2), 183-190, 2007
1222007
Introduction and recovery of Ga and N sublattice defects in electron-irradiated GaN
F Tuomisto, V Ranki, DC Look, GC Farlow
Physical Review B 76 (16), 165207, 2007
932007
Identification of the -O defect complex in AlN single crystals
JM Mäki, I Makkonen, F Tuomisto, A Karjalainen, S Suihkonen, ...
Physical Review B 84 (8), 081204, 2011
872011
Effects of grain size and deformation temperature on hydrogen-enhanced vacancy formation in Ni alloys
SK Lawrence, Y Yagodzinskyy, H Hänninen, E Korhonen, F Tuomisto, ...
Acta Materialia 128, 218-226, 2017
822017
Identification of vacancy defect complexes in transparent semiconducting oxides ZnO, In2O3 and SnO2
I Makkonen, E Korhonen, V Prozheeva, F Tuomisto
Journal of Physics: Condensed Matter 28 (22), 224002, 2016
802016
Vacancy clustering and acceptor activation in nitrogen-implanted ZnO
TM Børseth, F Tuomisto, JS Christensen, EV Monakhov, BG Svensson, ...
Physical Review B 77 (4), 045204, 2008
802008
Identifying vacancy complexes in compound semiconductors with positron annihilation spectroscopy: A case study of InN
C Rauch, I Makkonen, F Tuomisto
Physical Review B 84 (12), 125201, 2011
732011
Positron annihilation lifetime spectroscopy of ZnO bulk samples
A Zubiaga, F Plazaola, JA Garcia, F Tuomisto, V Muñoz-Sanjosé, ...
Physical Review B 76 (8), 085202, 2007
712007
Evaluation of the concentration of point defects in GaN
MA Reshchikov, A Usikov, H Helava, Y Makarov, V Prozheeva, ...
Scientific Reports 7 (1), 9297, 2017
692017
Identification of substitutional Li in -type ZnO and its role as an acceptor
KM Johansen, A Zubiaga, I Makkonen, F Tuomisto, PT Neuvonen, ...
Physical Review B 83 (24), 245208, 2011
692011
Zinc vacancies in the heteroepitaxy of ZnO on sapphire: Influence of the substrate orientation and layer thickness
A Zubiaga, F Tuomisto, F Plazaola, K Saarinen, JA Garcia, ...
Applied Physics Letters 86 (4), 2005
682005
Low energy electron beam induced vacancy activation in GaN
H Nykänen, S Suihkonen, L Kilanski, M Sopanen, F Tuomisto
Applied Physics Letters 100 (12), 2012
662012
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論文 1–20