| Defect identification in semiconductors with positron annihilation:<? format?> Experiment and theory F Tuomisto, I Makkonen Reviews of Modern Physics 85 (4), 1583-1631, 2013 | 748 | 2013 |
| Evidence of the Zn Vacancy Acting as the Dominant Acceptor in -Type ZnO F Tuomisto, V Ranki, K Saarinen, DC Look Physical Review Letters 91 (20), 205502, 2003 | 563 | 2003 |
| Introduction and recovery of point defects in electron-irradiated ZnO F Tuomisto, K Saarinen, DC Look, GC Farlow Physical Review B—Condensed Matter and Materials Physics 72 (8), 085206, 2005 | 409 | 2005 |
| Self-compensation in semiconductors: The Zn vacancy in Ga-doped ZnO DC Look, KD Leedy, L Vines, BG Svensson, A Zubiaga, F Tuomisto, ... Physical Review B—Condensed Matter and Materials Physics 84 (11), 115202, 2011 | 227 | 2011 |
| Electrical compensation by Ga vacancies in Ga2O3 thin films E Korhonen, F Tuomisto, D Gogova, G Wagner, M Baldini, Z Galazka, ... Applied Physics Letters 106 (24), 2015 | 190 | 2015 |
| Zinc vacancy and oxygen interstitial in ZnO revealed by sequential annealing and electron irradiation KE Knutsen, A Galeckas, A Zubiaga, F Tuomisto, GC Farlow, ... Physical Review B—Condensed Matter and Materials Physics 86 (12), 121203, 2012 | 183 | 2012 |
| Vacancy defect and defect cluster energetics in ion-implanted ZnO Y Dong, F Tuomisto, BG Svensson, AY Kuznetsov, LJ Brillson Physical Review B—Condensed Matter and Materials Physics 81 (8), 081201, 2010 | 152 | 2010 |
| Effect of growth polarity on vacancy defect and impurity incorporation in dislocation-free GaN F Tuomisto, K Saarinen, B Lucznik, I Grzegory, H Teisseyre, T Suski, ... Applied Physics Letters 86 (3), 2005 | 128 | 2005 |
| Hierarchical porosity in self‐assembled polymers: post‐modification of block copolymer–phenolic resin complexes by pyrolysis allows the control of micro‐and mesoporosity S Valkama, A Nykänen, H Kosonen, R Ramani, F Tuomisto, P Engelhardt, ... Advanced Functional Materials 17 (2), 183-190, 2007 | 122 | 2007 |
| Introduction and recovery of Ga and N sublattice defects in electron-irradiated GaN F Tuomisto, V Ranki, DC Look, GC Farlow Physical Review B—Condensed Matter and Materials Physics 76 (16), 165207, 2007 | 94 | 2007 |
| Identification of the -O defect complex in AlN single crystals JM Mäki, I Makkonen, F Tuomisto, A Karjalainen, S Suihkonen, ... Physical Review B—Condensed Matter and Materials Physics 84 (8), 081204, 2011 | 91 | 2011 |
| Effects of grain size and deformation temperature on hydrogen-enhanced vacancy formation in Ni alloys SK Lawrence, Y Yagodzinskyy, H Hänninen, E Korhonen, F Tuomisto, ... Acta Materialia 128, 218-226, 2017 | 85 | 2017 |
| Identification of vacancy defect complexes in transparent semiconducting oxides ZnO, In2O3 and SnO2 I Makkonen, E Korhonen, V Prozheeva, F Tuomisto Journal of Physics: Condensed Matter 28 (22), 224002, 2016 | 80 | 2016 |
| Vacancy clustering and acceptor activation in nitrogen-implanted ZnO TM Børseth, F Tuomisto, JS Christensen, EV Monakhov, BG Svensson, ... Physical Review B—Condensed Matter and Materials Physics 77 (4), 045204, 2008 | 80 | 2008 |
| Identifying vacancy complexes in compound semiconductors with positron annihilation spectroscopy: A case study of InN C Rauch, I Makkonen, F Tuomisto Physical Review B—Condensed Matter and Materials Physics 84 (12), 125201, 2011 | 73 | 2011 |
| Identification of substitutional Li in -type ZnO and its role as an acceptor KM Johansen, A Zubiaga, I Makkonen, F Tuomisto, PT Neuvonen, ... Physical Review B—Condensed Matter and Materials Physics 83 (24), 245208, 2011 | 70 | 2011 |
| Positron annihilation lifetime spectroscopy of ZnO bulk samples A Zubiaga, F Plazaola, JA Garcia, F Tuomisto, V Muñoz-Sanjosé, ... Physical Review B—Condensed Matter and Materials Physics 76 (8), 085202, 2007 | 70 | 2007 |
| Zinc vacancies in the heteroepitaxy of ZnO on sapphire: Influence of the substrate orientation and layer thickness A Zubiaga, F Tuomisto, F Plazaola, K Saarinen, JA Garcia, ... Applied Physics Letters 86 (4), 2005 | 68 | 2005 |
| Tracking defect-induced ferromagnetism in GaN: Gd M Roever, J Malindretos, A Bedoya-Pinto, A Rizzi, C Rauch, F Tuomisto Physical Review B—Condensed Matter and Materials Physics 84 (8), 081201, 2011 | 67 | 2011 |
| Evaluation of the concentration of point defects in GaN MA Reshchikov, A Usikov, H Helava, Y Makarov, V Prozheeva, ... Scientific Reports 7 (1), 9297, 2017 | 66 | 2017 |
Ilja MakkonenUniversity Lecturer, University of Helsinki確認したメール アドレス: helsinki.fi
