| AlGaN-based deep UV LEDs grown on sputtered and high temperature annealed AlN/sapphire N Susilo, S Hagedorn, D Jaeger, H Miyake, U Zeimer, C Reich, ... Applied Physics Letters 112 (4), 2018 | 206 | 2018 |
| Efficient charge carrier injection into sub-250 nm AlGaN multiple quantum well light emitting diodes F Mehnke, C Kuhn, M Guttmann, C Reich, T Kolbe, V Kueller, A Knauer, ... Applied Physics Letters 105 (5), 2014 | 132 | 2014 |
| Highly conductive n-AlxGa1− xN layers with aluminum mole fractions above 80% F Mehnke, T Wernicke, H Pingel, C Kuhn, C Reich, V Kueller, A Knauer, ... Applied Physics Letters 103 (21), 2013 | 124 | 2013 |
| Performance characteristics of UV-C AlGaN-based lasers grown on sapphire and bulk AlN substrates M Martens, F Mehnke, C Kuhn, C Reich, V Kueller, A Knauer, C Netzel, ... IEEE Photonics Technology Letters 26 (4), 342-345, 2013 | 118 | 2013 |
| Strongly transverse-electric-polarized emission from deep ultraviolet AlGaN quantum well light emitting diodes C Reich, M Guttmann, M Feneberg, T Wernicke, F Mehnke, C Kuhn, ... Applied Physics Letters 107 (14), 2015 | 99 | 2015 |
| Low-threshold stimulated emission at 249 nm and 256 nm from AlGaN-based multiple-quantum-well lasers grown on sapphire substrates XH Li, T Detchprohm, TT Kao, MM Satter, SC Shen, P Douglas Yoder, ... Applied Physics Letters 105 (14), 2014 | 94 | 2014 |
| Modulated epitaxial lateral overgrowth of AlN for efficient UV LEDs V Kueller, A Knauer, C Reich, A Mogilatenko, M Weyers, J Stellmach, ... IEEE Photonics Technology Letters 24 (18), 1603-1605, 2012 | 67 | 2012 |
| High-power UV-B LEDs with long lifetime J Rass, T Kolbe, N Lobo-Ploch, T Wernicke, F Mehnke, C Kuhn, J Enslin, ... Gallium Nitride Materials and Devices X 9363, 182-194, 2015 | 62 | 2015 |
| Optical light polarization and light extraction efficiency of AlGaN-based LEDs emitting between 264 and 220 nm M Guttmann, F Mehnke, B Belde, F Wolf, C Reich, L Sulmoni, T Wernicke, ... Japanese Journal of Applied Physics 58 (SC), SCCB20, 2019 | 60 | 2019 |
| Gas sensing of nitrogen oxide utilizing spectrally pure deep UV LEDs F Mehnke, M Guttmann, J Enslin, C Kuhn, C Reich, J Jordan, S Kapanke, ... IEEE Journal of Selected Topics in Quantum Electronics 23 (2), 29-36, 2016 | 56 | 2016 |
| Structural and optical properties of semipolar (112¯ 2) AlGaN grown on (101¯ 0) sapphire by metal–organic vapor phase epitaxy J Stellmach, F Mehnke, M Frentrup, C Reich, J Schlegel, M Pristovsek, ... Journal of crystal growth 367, 42-47, 2013 | 44 | 2013 |
| AlGaN layer structures for deep UV emitters on laterally overgrown AlN/sapphire templates A Knauer, V Kueller, U Zeimer, M Weyers, C Reich, M Kneissl physica status solidi (a) 210 (3), 451-454, 2013 | 39 | 2013 |
| Effect of heterostructure design on carrier injection and emission characteristics of 295 nm light emitting diodes F Mehnke, C Kuhn, J Stellmach, T Kolbe, N Lobo-Ploch, J Rass, ... Journal of Applied Physics 117 (19), 2015 | 37 | 2015 |
| Excitonic recombination in epitaxial lateral overgrown AlN on sapphire C Reich, M Feneberg, V Kueller, A Knauer, T Wernicke, J Schlegel, ... Applied Physics Letters 103 (21), 2013 | 25 | 2013 |
| Sensing glucose concentrations at GHz frequencies with a fully embedded Biomicro-electromechanical system (BioMEMS) M Birkholz, KE Ehwald, T Basmer, P Kulse, C Reich, J Drews, ... Journal of applied physics 113 (24), 2013 | 23 | 2013 |
| Influence of waveguide strain and surface morphology on AlGaN-based deep UV laser characteristics C Kuhn, M Martens, F Mehnke, J Enslin, P Schneider, C Reich, F Krueger, ... Journal of Physics D: Applied Physics 51 (41), 415101, 2018 | 20 | 2018 |
| UV-C lasing from AlGaN multiple quantum wells on different types of AlN/sapphire templates J Jeschke, M Martens, A Knauer, V Kueller, U Zeimer, C Netzel, C Kuhn, ... IEEE Photonics Technology Letters 27 (18), 1969-1972, 2015 | 19 | 2015 |
| Preparation and structure of ultra-thin GaN (0001) layers on In0. 11Ga0. 89N-single quantum wells S Alamé, AN Quezada, D Skuridina, C Reich, D Henning, M Frentrup, ... Materials Science in Semiconductor Processing 55, 7-11, 2016 | 17 | 2016 |
| Effect of quantum barrier composition on electro-optical properties of AlGaN-based UVC light emitting diodes M Guttmann, J Höpfner, C Reich, L Sulmoni, C Kuhn, P Röder, ... Semiconductor Science and Technology 34 (8), 085007, 2019 | 10 | 2019 |
| Design considerations for AlGaN-based UV LEDs emitting near 235 nm with uniform emission pattern M Lapeyrade, J Glaab, A Knauer, C Kuhn, J Enslin, C Reich, M Guttmann, ... Semiconductor Science and Technology 32 (4), 045019, 2017 | 5 | 2017 |
Michael KneisslProfessor, Institute of Solid State Physics, TU Berlin, Germany確認したメール アドレス: physik.tu-berlin.de
