| Spin-dependent tunneling characteristics of fully epitaxial magnetic tunneling junctions with a full-Heusler alloy Co2MnSi thin film and a MgO tunnel barrier T Ishikawa, T Marukame, H Kijima, KI Matsuda, T Uemura, M Arita, ... Applied physics letters 89 (19), 2006 | 207 | 2006 |
| Highly spin-polarized tunneling in fully epitaxial Co2Cr0. 6Fe0. 4Al∕ MgO∕ Co50Fe50 magnetic tunnel junctions with exchange biasing T Marukame, T Ishikawa, S Hakamata, K Matsuda, T Uemura, ... Applied physics letters 90 (1), 2007 | 194* | 2007 |
| Low-power linear computation using nonlinear ferroelectric tunnel junction memristors R Berdan, T Marukame, K Ota, M Yamaguchi, M Saitoh, S Fujii, J Deguchi, ... Nature Electronics 3 (5), 259-266, 2020 | 153 | 2020 |
| Fabrication of fully epitaxial magnetic tunnel junctions using cobalt-based full-Heusler alloy thin film and their tunnel magnetoresistance characteristics M Yamamoto, T Marukame, T Ishikawa, K Matsuda, T Uemura, M Arita Journal of Physics D: Applied Physics 39 (5), 824, 2006 | 119 | 2006 |
| High tunnel magnetoresistance in fully epitaxial magnetic tunnel junctions with a full-Heusler alloy Co2Cr0. 6Fe0. 4Al thin film T Marukame, T Ishikawa, KI Matsuda, T Uemura, M Yamamoto Applied physics letters 88 (26), 2006 | 92 | 2006 |
| Fabrication of fully epitaxial magnetic tunnel junctions using full-Heusler alloy Co2Cr0. 6Fe0. 4Al thin film and MgO tunnel barrier T Marukame, T Kasahara, K Matsuda, T Uemura, M Yamamoto Japanese journal of applied physics 44 (4L), L521, 2005 | 85 | 2005 |
| Spin transistor and method of manufacturing the same T Marukame, M Ishikawa, T Inokuchi, H Sugiyama, Y Saito US Patent 8,357,962, 2013 | 57 | 2013 |
| Tunnel magnetoresistance in fully epitaxial magnetic tunnel junctions with a full-Heusler alloy thin film of Co2Cr0. 6Fe0. 4Al and a MgO tunnel barrier T Marukame, M Yamamoto Journal of applied physics 101 (8), 2007 | 53 | 2007 |
| Extracting physically unclonable function from spin transfer switching characteristics in magnetic tunnel junctions T Marukame, T Tanamoto, Y Mitani IEEE Transactions on Magnetics 50 (11), 1-4, 2014 | 47 | 2014 |
| Tunnel magnetoresistance in epitaxial magnetic tunnel junctions using full-Heusler alloy Co2MnGe thin film and MgO tunnel barrier T Marukame, T Ishikawa, K Matsuda, T Uemura, M Yamamoto Journal of applied physics 99 (8), 2006 | 47 | 2006 |
| Memory system including key-value store T Marukame, A Kinoshita, K Tatsumura US Patent 9,361,408, 2016 | 45 | 2016 |
| Structural and magnetic properties of epitaxially grown full-Heusler alloy Co2MnGe thin films deposited using magnetron sputtering T Ishikawa, T Marukame, K Matsuda, T Uemura, M Arita, M Yamamoto Journal of applied physics 99 (8), 2006 | 42 | 2006 |
| Electrical spin injection into n-GaAs channels and detection through MgO/CoFeB electrodes T Inokuchi, T Marukame, M Ishikawa, H Sugiyama, Y Saito Applied physics express 2 (2), 023006, 2009 | 39 | 2009 |
| Improved tunnel magnetoresistance characteristics of magnetic tunnel junctions with a Heusler alloy thin film of Co2MnGe and a MgO tunnel barrier S Hakamata, T Ishikawa, T Marukame, K Matsuda, T Uemura, M Arita, ... Journal of applied physics 101 (9), 2007 | 39 | 2007 |
| Spin injection, transport, and read/write operation in spin-based MOSFET Y Saito, T Marukame, T Inokuchi, M Ishikawa, H Sugiyama, T Tanamoto Thin Solid Films 519 (23), 8266-8273, 2011 | 37 | 2011 |
| Semiconductor memory device, information processing system and control method T Marukame, A Kinoshita, T Kurita US Patent App. 13/762,986, 2013 | 36 | 2013 |
| 2019 IEEE Int. Electron Devices Meeting (IEDM) K Ota, M Yamaguchi, R Berdan, T Marukame, Y Nishi, K Matsuo, ... IEEE, 2019 | 34 | 2019 |
| Spin MOSFET and reconfigurable logic circuit Y Saito, H Sugiyama, T Inokuchi, T Marukame, M Ishikawa US Patent 8,026,561, 2011 | 32 | 2011 |
| Schottky barrier height modulation by atomic dipoles at the silicide/silicon interface Y Nishi, T Yamauchi, T Marukame, A Kinoshita, J Koga, K Kato Physical Review B 84 (11), 115323, 2011 | 32 | 2011 |
| Epitaxial Growth of Full-Heusler Alloy CoMnSi Thin Films on MgO-Buffered MgO Substrates H Kijima, T Ishikawa, T Marukame, H Koyama, K Matsuda, T Uemura, ... IEEE transactions on magnetics 42 (10), 2688-2690, 2006 | 32 | 2006 |
