| Characterization of structures from X-ray scattering data using genetic algorithms M Wormington, C Panaccione, KM Matney, DK Bowen Philosophical Transactions of the Royal Society of London. Series A …, 1999 | 421 | 1999 |
| Fitting of X-ray scattering data using evolutionary algorithms M Wormington, C Panaccione, KM Matney, DK Bowen US Patent 6,192,103, 2001 | 64 | 2001 |
| Processing technologies for advanced Ge devices R Loo, AY Hikavyy, L Witters, A Schulze, H Arimura, D Cott, J Mitard, ... ECS Journal of Solid State Science and Technology 6 (1), P14, 2016 | 41 | 2016 |
| Annealing effects on the temperature dependence of photoluminescence characteristics of GaAsSbN single-quantum wells J Li, S Iyer, S Bharatan, L Wu, K Nunna, W Collis, KK Bajaj, K Matney Journal of applied physics 98 (1), 2005 | 32 | 2005 |
| The effects of annealing on the structural, optical, and vibrational properties of lattice-matched GaAsSbN∕ GaAs grown by molecular beam epitaxy S Bharatan, S Iyer, K Nunna, WJ Collis, K Matney, J Reppert, AM Rao, ... Journal of Applied Physics 102 (2), 2007 | 27 | 2007 |
| MBE growth and properties of GaAsSbN/GaAs single quantum wells L Wu, S Iyer, K Nunna, J Li, S Bharatan, W Collis, K Matney Journal of crystal growth 279 (3-4), 293-302, 2005 | 27 | 2005 |
| Effect of substrate miscut on the structural properties of InGaAs linear graded buffer layers grown by molecularbeam epitaxy on GaAs JW Eldredge, KM Matney, MS Goorsky, HC Chui, JS Harris Jr Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 1995 | 25 | 1995 |
| Scans along arbitrary directions in reciprocal space and the analysis of GaN films on SiC B Poust, B Heying, S Hayashi, R Ho, K Matney, R Sandhu, M Wojtowicz, ... Journal of Physics D: Applied Physics 38 (10A), A93, 2005 | 22 | 2005 |
| Effects of N incorporation on the structural and photoluminescence characteristics of GaSbN/GaSb single quantum wells S Iyer, L Wu, J Li, S Potoczny, K Matney, PRC Kent Journal of applied physics 101 (11), 2007 | 19 | 2007 |
| Reciprocal space mapping for semiconductor substrates and device heterostructures MS Goorsky, KM Matney, M Meshkinpour, DC Streit, TR Block Il Nuovo Cimento D 19, 257-266, 1997 | 15 | 1997 |
| Measurement of periodicity and strain in arrays of single crystal silicon and pseudomorphic Si1− xGex/Si fin structures using x-ray reciprocal space maps M Medikonda, GR Muthinti, J Fronheiser, V Kamineni, M Wormington, ... Journal of Vacuum Science & Technology B 32 (2), 2014 | 14 | 2014 |
| Characterization of buried pseudomorphic InGaAs layers using highresolution xray diffraction M Meshkinpour, MS Goorsky, KM Matney, DC Streit, TR Block Journal of applied physics 76 (6), 3362-3366, 1994 | 14 | 1994 |
| Preservation of rectangular-patterned InP gratings overgrown by gas source molecular beam epitaxy EM Koontz, MH Lim, VV Wong, GS Petrich, LA Kolodziejski, HI Smith, ... Applied physics letters 71 (10), 1400-1402, 1997 | 10 | 1997 |
| Determining period variations in a distributed Bragg reflector through high resolution X-ray analysis K Matney, MS Goorsky Journal of crystal growth 148 (4), 327-335, 1995 | 9 | 1995 |
| Correlation of interface recombination and dislocation density at GalnP/GaAs heterojunctions M Müllenborn, K Matney, MS Goorsky, NM Haegel, SM Vernon Journal of applied physics 75 (5), 2418-2420, 1994 | 9 | 1994 |
| Growth and properties of lattice matched GaAsSbN epilayer on GaAs for solar cell applications S Bharatan, S Iyer, K Matney, WJ Collis, K Nunna, J Li, L Wu, K McGuire, ... MRS Online Proceedings Library (OPL) 891, 0891-EE10-36, 2005 | 8 | 2005 |
| Inline metrology of high aspect ratio hole tilt and center line shift using small-angle x-ray scattering P Gin, M Wormington, Y Amasay, I Grinberg, A Brady, I Reichental, ... Journal of Micro/Nanopatterning, Materials, and Metrology 22 (3), 031205-031205, 2023 | 7 | 2023 |
| Image contrast in X-ray topography imaging for defect inspection KM Matney, O Whear, RT Bytheway, JL Wall, M Wormington US Patent 10,816,487, 2020 | 7 | 2020 |
| A new approach for determining epilayer strain relaxation and composition through high resolution X-ray diffraction KM Matney, MS Goorsky MRS Online Proceedings Library 379, 257-262, 1995 | 7 | 1995 |
| Materials characterization for process integration of multi-channel gate all around (GAA) devices GR Muthinti, N Loubet, R Chao, AA de la Peña, J Li, MA Guillorn, ... Metrology, Inspection, and Process Control for Microlithography XXXI 10145 …, 2017 | 6 | 2017 |
