Mohamed Belmoubarik
Mohamed Belmoubarik
Other namesM. Belmoubarik
Mohammed VI Polytechnic University, Kingdom of Morocco
Verified email at - Homepage
Cited by
Cited by
Intersubband transitions in ZnO multiple quantum wells
M Belmoubarik, K Ohtani, H Ohno
Applied Physics Letters 92 (19), 2008
MgAl2O4 (001) based magnetic tunnel junctions made by direct sputtering of a sintered spinel target
M Belmoubarik, H Sukegawa, T Ohkubo, S Mitani, K Hono
Applied Physics Letters 108 (13), 2016
MgGa2O4 spinel barrier for magnetic tunnel junctions: Coherent tunneling and low barrier height
H Sukegawa, Y Kato, M Belmoubarik, PH Cheng, T Daibou, N Shimomura, ...
Applied Physics Letters 110 (12), 2017
Giant tunnel magnetoresistance in polycrystalline magnetic tunnel junctions with highly textured MgAl2O4 (001) based barriers
I Ikhtiar, H Sukegawa, X Xu, M Belmoubarik, H Lee, S Kasai, K Hono
Applied Physics Letters 112 (2), 2018
Intersubband optical transitions in ZnO-based quantum wells grown by plasma-assisted molecular beam epitaxy
K Ohtani, M Belmoubarik, H Ohno
Journal of crystal growth 311 (7), 2176-2178, 2009
Realizing Room‐Temperature Resonant Tunnel Magnetoresistance in Cr/Fe/MgAl2O4 Quasi‐Quantum Well Structures
Q Xiang, H Sukegawa, M Belmoubarik, M Al‐Mahdawi, T Scheike, ...
Advanced Science 6 (20), 1901438, 2019
Magnetoresistive element and magnetic memory device
Y Kato, T Daibou, Y Kamiguchi, N Shimomura, J Ito, H Sukegawa, ...
US Patent 10,305,027, 2019
Tunneling electroresistance of MgZnO-based tunnel junctions
M Belmoubarik, M Al-Mahdawi, M Obata, D Yoshikawa, H Sato, T Nozaki, ...
Applied Physics Letters 109 (17), 2016
Epitaxial wurtzite-MgZnO barrier based magnetic tunnel junctions deposited on a metallic ferromagnetic electrode
MS M. Belmoubarik, M. Al-Mahdawi, H. Sato, T. Nozaki
Applied Physics Letters 106 (25), 252403, 2015
Investigation of ZnO thin films deposited on ferromagnetic metallic buffer layer by molecular beam epitaxy toward realization of ZnO-based magnetic tunneling junctions
M Belmoubarik, T Nozaki, H Endo, M Sahashi
Journal of Applied Physics 113 (17), 2013
Graphene-based biosensor for Viral Detection
AE Moutaouakil, S Poovathy, M Belmoubarik, WK Peng
arXiv preprint arXiv:2006.11881, 2020
A Voltage-Tuned Terahertz Absorber Based on MoS2/Graphene Nanoribbon Structure
O Samy, M Belmoubarik, T Otsuji, A El Moutaouakil
Nanomaterials 13 (11), 1716, 2023
Barrier thickness dependence of the built-in electric field in pseudomorphic ZnO/Zn0. 55Mg0. 45O multi-quantum wells
M Belmoubarik, A El Moutaouakil
Journal of Alloys and Compounds 941, 168960, 2023
Graphene in the fight against malaria
AE Moutaouakil, M Belmoubarik, WK Peng
arXiv preprint arXiv:2008.13605, 2020
Large nonvolatile control of interfacial magnetic anisotropy in CoPt by a ferroelectric ZnO-based tunneling barrier
M Al-Mahdawi, M Belmoubarik, M Obata, D Yoshikawa, H Sato, T Nozaki, ...
Physical Review B 100 (5), 054423, 2019
Effect of Mg-Al insertion on magnetotransport properties in epitaxial Fe/sputter-deposited MgAl2O4/Fe (001) magnetic tunnel junctions
M Belmoubarik, H Sukegawa, T Ohkubo, S Mitani, K Hono
AIP Advances 7 (5), 2017
Resistive switching and Schottky barrier modulation at CoPt/ferroelectric-like MgZnO interface for non-volatile memories
M Belmoubarik, M Al-Mahdawi, G Machado, T Nozaki, C Coelho, ...
Journal of Materials Science: Materials in Electronics 35 (7), 1-17, 2024
Effect of Se‐Free Annealing on Cesium Fluoride‐Treated Cu(In,Ga)Se2 Thin Films and Corresponding Solar Cells
I Khatri, P Santos, P Anacleto, D Sharma, M Belmoubarik, N Nicoara, ...
physica status solidi (RRL)–Rapid Research Letters 16 (2), 2100462, 2022
The Comprehensive Roadmap Toward Malaria Elimination Using Graphene and its Promising 2D Analogs
F He, G Junior, R Konar, Y Huang, K Zhang, L Ke, M Niu, BT Goh, ...
Advanced NanoBiomed Research, 2300130, 2024
Fermi-Level Pinning and Barrier Height Control at epitaxially grown ferromagnet/ZnO/metal Schottky Interfaces for opto-spintronics applications
M Belmoubarik
arXiv preprint arXiv:2401.06778, 2023
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