Mohamed Belmoubarik
TitleCited byYear
Intersubband transitions in ZnO multiple quantum wells
M Belmoubarik, K Ohtani, H Ohno
Applied Physics Letters 92 (19), 191906, 2008
392008
MgAl2O4 (001) based magnetic tunnel junctions made by direct sputtering of a sintered spinel target
M Belmoubarik, H Sukegawa, T Ohkubo, S Mitani, K Hono
Applied Physics Letters 108 (13), 132404, 2016
232016
MgGa2O4 spinel barrier for magnetic tunnel junctions: Coherent tunneling and low barrier height
H Sukegawa, Y Kato, M Belmoubarik, PH Cheng, T Daibou, N Shimomura, ...
Applied Physics Letters 110 (12), 122404, 2017
82017
Intersubband optical transitions in ZnO-based quantum wells grown by plasma-assisted molecular beam epitaxy
K Ohtani, M Belmoubarik, H Ohno
Journal of Crystal Growth 311 (7), 2176-2178, 2009
62009
Investigation of ZnO thin films deposited on ferromagnetic metallic buffer layer by molecular beam epitaxy toward realization of ZnO-based magnetic tunneling junctions
M Belmoubarik, T Nozaki, H Endo, M Sahashi
Journal of Applied Physics 113 (17), 17C106, 2013
52013
Epitaxial wurtzite-MgZnO barrier based magnetic tunnel junctions deposited on a metallic ferromagnetic electrode
MS M. Belmoubarik, M. Al-Mahdawi, H. Sato, T. Nozaki
Applied Physics Letters 106 (25), 252403, 2015
42015
Giant tunnel magnetoresistance in polycrystalline magnetic tunnel junctions with highly textured MgAl2O4(001) based barriers
Ikhtiar, H Sukegawa, X Xu, M Belmoubarik, H Lee, S Kasai, K Hono
Applied Physics Letters 112 (2), 022408, 2018
32018
Magnetoresistive element and magnetic memory device
Y Kato, T Daibou, Y Kamiguchi, N Shimomura, J Ito, H Sukegawa, ...
US Patent App. 15/699,749, 2018
22018
Tunneling electroresistance of MgZnO-based tunnel junctions
M Belmoubarik, M Al-Mahdawi, M Obata, D Yoshikawa, H Sato, T Nozaki, ...
Applied Physics Letters 109 (17), 173507, 2016
22016
Effect of Mg-Al insertion on magnetotransport properties in epitaxial Fe/sputter-deposited MgAl2O4/Fe(001) magnetic tunnel junctions
M Belmoubarik, H Sukegawa, T Ohkubo, S Mitani, K Hono
AIP Advances 7 (5), 055908, 2017
12017
Large nonvolatile control of interfacial magnetic anisotropy in CoPt by a ferroelectric ZnO-based tunneling barrier
M Al-Mahdawi, M Belmoubarik, M Obata, D Yoshikawa, H Sato, T Nozaki, ...
Physical Review B 100 (5), 054423, 2019
2019
Realizing Room‐Temperature Resonant Tunnel Magnetoresistance in Cr/Fe/MgAl2O4 Quasi‐Quantum Well Structures
Q Xiang, H Sukegawa, M Belmoubarik, M Al‐Mahdawi, T Scheike, ...
Advanced Science, 1901438, 2019
2019
Magnetoresistive element and magnetic memory device
Y Kato, T Daibou, Y Kamiguchi, N Shimomura, J Ito, H Sukegawa, ...
US Patent App. 10/305,027, 2019
2019
Large nonvolatile control of magnetic anisotropy in CoPt by a ferroelectric ZnO-based tunneling barrier
M Al-Mahdawi, M Belmoubarik, M Obata, D Yoshikawa, H Sato, T Nozaki, ...
arXiv preprint arXiv:1810.03838, 2018
2018
Magnetoresistive element and a magnetic memory device
KH Yushi Kato, Tadaomi Daibou, Yuuzo Kamiguchi, Naoharu Shimomura, Junichi ...
JP Patent 6365901B2, 2018
2018
Highly (001)-textured MgAl2O4-based magnetic tunnel junctions with large magnetoresistance over 240%.
I Tiar, H Sukegawa, X Xu, M Belmoubarik, H Lee, S Kasai, K Hono
2018 IEEE International Magnetics Conference (INTERMAG), 1-1, 2018
2018
Perpendicular magnetic anisotropy at Fe/MgAl2O4 interfaces and its voltage effect
Q Xiang, H Sukegawa, M Al-Mahdawi, M Belmoubarik, Y Sakuraba, ...
The 41st Annual Conference on Magnetics, 2017
2017
Epitaxial magnetic tunnel junctions with a low barrier height spinel MgGa2O4
H Sukegawa, Y Kato, M Belmoubarik, P Cheng, T Daibou, N Shimomura, ...
2017 IEEE International Magnetics Conference (INTERMAG), 1-1, 2017
2017
High quality cation-disorder MgAl2O4 (001)-based magnetic tunnel junctions deposited by a direct sputtering technique
M Belmoubarik, H Sukegawa, T Ohkubo, S Mitani, K Hono
63th Spring Meeting of Japan Society of Applied Physics, 2016
2016
Segmentation apparatus, an image forming apparatus, the segmentation method and segmentation program
N Mohamed Belmoubarik
JP Patent 5697132B2, 2015
2015
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Articles 1–20