フォロー
Martin Stattin
Martin Stattin
Doktor i Mikroteknologi och Nanovetenskap, Chalmers Tekniska Högskola
確認したメール アドレス: finisar.com
タイトル
引用先
引用先
Engineering the lateral optical guiding in gallium nitride-based vertical-cavity surface-emitting laser cavities to reach the lowest threshold gain
E Hashemi, J Gustavsson, J Bengtsson, M Stattin, G Cosendey, ...
Japanese Journal of Applied Physics 52 (8S), 08JG04, 2013
432013
Analysis of structurally sensitive loss in GaN-based VCSEL cavities and its effect on modal discrimination
E Hashemi, J Bengtsson, J Gustavsson, M Stattin, G Cosendey, ...
Optics Express 22 (1), 411-426, 2014
402014
Mg‐doped Al0.85Ga0.15N layers grown by hot‐wall MOCVD with low resistivity at room temperature
A Kakanakova‐Georgieva, D Nilsson, M Stattin, U Forsberg, Å Haglund, ...
physica status solidi (RRL)–Rapid Research Letters 4 (11), 311-313, 2010
352010
Temperature stability of intersubband transitions in AlN/GaN quantum wells
K Berland, M Stattin, R Farivar, DMS Sultan, P Hyldgaard, A Larsson, ...
Applied Physics Letters 97 (4), 2010
222010
Progress and challenges in electrically pumped GaN-based VCSELs
Å Haglund, E Hashemi, J Bengtsson, J Gustavsson, M Stattin, M Calciati, ...
Semiconductor Lasers and Laser Dynamics VII 9892, 161-180, 2016
212016
Waveguides for nitride based quantum cascade lasers
M Stattin, K Berland, P Hyldgaard, A Larsson, TG Andersson
physica status solidi c 8 (7‐8), 2357-2359, 2011
112011
Effect of compositional interlayers on the vertical electrical conductivity of Si-doped AlN/GaN distributed Bragg reflectors grown on SiC
E Hashemi, F Hjort, M Stattin, T Ive, O Bäcke, A Lotsari, M Halvarsson, ...
Applied Physics Express 10 (5), 055501, 2017
72017
Design and fabrication of AlN/GaN heterostructures for intersubband technology
T Ive, K Berland, M Stattin, F Fälth, P Hyldgaard, A Larsson, ...
Japanese Journal of Applied Physics 51 (1S), 01AG07, 2012
52012
Metal-free graphene as transparent electrode for GaN-based light-emitters
M Stattin, CL de la Rosa, J Sun, A Yurgens, Å Haglund
Japanese Journal of Applied Physics 52 (8S), 08JG05, 2013
42013
Design and Fabrication of Nitride Heterostructures for Intersubband Applications
T Ive, K Berland, M Stattin, T Andersson
2012 International Conference on Solid-State and Integrated Circuit (ICSIC …, 2012
22012
Triggering of guiding and antiguiding effects in GaN-based VCSELs
E Hashemi, J Bengtsson, J Gustavsson, M Stattin, M Glauser, ...
Vertical-Cavity Surface-Emitting Lasers XVIII 9001, 62-69, 2014
12014
ZnO/AlN Clad Waveguides for AlGaN-Based Quantum Cascade Lasers
M Stattin, J Bengtsson, A Larsson
Japanese Journal of Applied Physics 52 (5R), 054001, 2013
12013
Engineering the Lateral Optical Guiding in Gallium Nitride (GaN)-based Vertical-Cavity Surface-Emitting Laser (VCSEL) Cavities to Reach the Lowest Threshold Gain
SE Hashemi, JS Gustavsson, J Bengtsson, M Stattin, G Cosendey, ...
Japanese Journal of Applied Physics 52, 2013
2013
Elements of AlGaN-Based Light Emitters
M Stattin
PQDT-Global, 2013
2013
Graphene as transparent electrode for GaN-based VCSELs
M Stattin, CJ Lockhart de la Rosa, J Sun, A Yurgens, A Larsson, ...
International Workshop on Nitride Semiconductors 2012, October 14-19, 2012 …, 2012
2012
Engineering the transverse optical guiding in GaN-based VCSELs to avoid detrimental optical loss
SE Hashemi, JS Gustavsson, J Bengtsson, M Stattin, A Larsson, ...
International Workshop on Nitride Semiconductors 2012, October 14-19, 2012 …, 2012
2012
SCIENTIFIC PAPERS
JF Fälth, SK Davidsson, XY Liu, TG Andersson, T Ive, K Berland, M Stattin, ...
Physics Letters 99, 251903, 2011
2011
Design and Fabrication of AlN/GaN Heterostructures for Intersubband Technology
T Andersson, K Berland, R Farivar, F Fälth, P Hyldgaard, T Ive, A Larsson, ...
ISPlasma 2011, March 6-9, 2011 Nagoya, Japan, 2011
2011
Towards Novel AlGaN-Based Light Emitters
M Stattin
Chalmers University of Technology, 2011
2011
A Lateral Photodetector for Position Sensing at 1.55 Microns
M Stattin
Chalmers University of Technology, 2008
2008
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論文 1–20