Engineering the lateral optical guiding in gallium nitride-based vertical-cavity surface-emitting laser cavities to reach the lowest threshold gain E Hashemi, J Gustavsson, J Bengtsson, M Stattin, G Cosendey, ... Japanese Journal of Applied Physics 52 (8S), 08JG04, 2013 | 43 | 2013 |
Analysis of structurally sensitive loss in GaN-based VCSEL cavities and its effect on modal discrimination E Hashemi, J Bengtsson, J Gustavsson, M Stattin, G Cosendey, ... Optics Express 22 (1), 411-426, 2014 | 40 | 2014 |
Mg‐doped Al0.85Ga0.15N layers grown by hot‐wall MOCVD with low resistivity at room temperature A Kakanakova‐Georgieva, D Nilsson, M Stattin, U Forsberg, Å Haglund, ... physica status solidi (RRL)–Rapid Research Letters 4 (11), 311-313, 2010 | 35 | 2010 |
Temperature stability of intersubband transitions in AlN/GaN quantum wells K Berland, M Stattin, R Farivar, DMS Sultan, P Hyldgaard, A Larsson, ... Applied Physics Letters 97 (4), 2010 | 22 | 2010 |
Progress and challenges in electrically pumped GaN-based VCSELs Å Haglund, E Hashemi, J Bengtsson, J Gustavsson, M Stattin, M Calciati, ... Semiconductor Lasers and Laser Dynamics VII 9892, 161-180, 2016 | 21 | 2016 |
Waveguides for nitride based quantum cascade lasers M Stattin, K Berland, P Hyldgaard, A Larsson, TG Andersson physica status solidi c 8 (7‐8), 2357-2359, 2011 | 11 | 2011 |
Effect of compositional interlayers on the vertical electrical conductivity of Si-doped AlN/GaN distributed Bragg reflectors grown on SiC E Hashemi, F Hjort, M Stattin, T Ive, O Bäcke, A Lotsari, M Halvarsson, ... Applied Physics Express 10 (5), 055501, 2017 | 7 | 2017 |
Design and fabrication of AlN/GaN heterostructures for intersubband technology T Ive, K Berland, M Stattin, F Fälth, P Hyldgaard, A Larsson, ... Japanese Journal of Applied Physics 51 (1S), 01AG07, 2012 | 5 | 2012 |
Metal-free graphene as transparent electrode for GaN-based light-emitters M Stattin, CL de la Rosa, J Sun, A Yurgens, Å Haglund Japanese Journal of Applied Physics 52 (8S), 08JG05, 2013 | 4 | 2013 |
Design and Fabrication of Nitride Heterostructures for Intersubband Applications T Ive, K Berland, M Stattin, T Andersson 2012 International Conference on Solid-State and Integrated Circuit (ICSIC …, 2012 | 2 | 2012 |
Triggering of guiding and antiguiding effects in GaN-based VCSELs E Hashemi, J Bengtsson, J Gustavsson, M Stattin, M Glauser, ... Vertical-Cavity Surface-Emitting Lasers XVIII 9001, 62-69, 2014 | 1 | 2014 |
ZnO/AlN Clad Waveguides for AlGaN-Based Quantum Cascade Lasers M Stattin, J Bengtsson, A Larsson Japanese Journal of Applied Physics 52 (5R), 054001, 2013 | 1 | 2013 |
Engineering the Lateral Optical Guiding in Gallium Nitride (GaN)-based Vertical-Cavity Surface-Emitting Laser (VCSEL) Cavities to Reach the Lowest Threshold Gain SE Hashemi, JS Gustavsson, J Bengtsson, M Stattin, G Cosendey, ... Japanese Journal of Applied Physics 52, 2013 | | 2013 |
Elements of AlGaN-Based Light Emitters M Stattin PQDT-Global, 2013 | | 2013 |
Graphene as transparent electrode for GaN-based VCSELs M Stattin, CJ Lockhart de la Rosa, J Sun, A Yurgens, A Larsson, ... International Workshop on Nitride Semiconductors 2012, October 14-19, 2012 …, 2012 | | 2012 |
Engineering the transverse optical guiding in GaN-based VCSELs to avoid detrimental optical loss SE Hashemi, JS Gustavsson, J Bengtsson, M Stattin, A Larsson, ... International Workshop on Nitride Semiconductors 2012, October 14-19, 2012 …, 2012 | | 2012 |
SCIENTIFIC PAPERS JF Fälth, SK Davidsson, XY Liu, TG Andersson, T Ive, K Berland, M Stattin, ... Physics Letters 99, 251903, 2011 | | 2011 |
Design and Fabrication of AlN/GaN Heterostructures for Intersubband Technology T Andersson, K Berland, R Farivar, F Fälth, P Hyldgaard, T Ive, A Larsson, ... ISPlasma 2011, March 6-9, 2011 Nagoya, Japan, 2011 | | 2011 |
Towards Novel AlGaN-Based Light Emitters M Stattin Chalmers University of Technology, 2011 | | 2011 |
A Lateral Photodetector for Position Sensing at 1.55 Microns M Stattin Chalmers University of Technology, 2008 | | 2008 |