| Forward thermionic field emission transport and significant image force lowering caused by high electric field at metal/heavily-doped SiC Schottky interfaces M Hara, S Asada, T Maeda, T Kimoto Applied Physics Express 13 (4), 041001, 2020 | 19 | 2020 |
| Electron mobility along< 0001> and< 11̅00> directions in 4H-SiC over a wide range of donor concentration and temperature R Ishikawa, M Hara, H Tanaka, M Kaneko, T Kimoto Applied Physics Express 14 (6), 061005, 2021 | 14 | 2021 |
| Nearly Fermi-level-pinning-free interface in metal/heavily-doped SiC Schottky structures M Hara, M Kaneko, T Kimoto Japanese Journal of Applied Physics 60 (SB), SBBD14, 2021 | 11 | 2021 |
| Critical electric field for transition of thermionic field emission/field emission transport in heavily doped SiC Schottky barrier diodes M Hara, H Tanaka, M Kaneko, T Kimoto Applied Physics Letters 120 (17), 2022 | 7 | 2022 |
| Enhanced tunneling current and low contact resistivity at Mg contacts on heavily phosphorus-ion-implanted SiC M Hara, M Kaneko, T Kimoto Applied Physics Express 16 (2), 021003, 2023 | 4 | 2023 |
| Tunneling current through non-alloyed metal/heavily-doped SiC interfaces M Hara, T Kitawaki, H Tanaka, M Kaneko, T Kimoto Materials Science in Semiconductor Processing 171, 108023, 2024 | 1 | 2024 |
| Impact of the split-off band on the tunneling current at metal/heavily-doped p-type SiC Schottky interfaces T Kitawaki, M Hara, H Tanaka, M Kaneko, T Kimoto Applied Physics Express 16 (3), 031005, 2023 | 1 | 2023 |
