Joohwi Lee
Joohwi Lee
Toyota Central R&D Lab., Inc.
確認したメール アドレス:
Prediction model of band gap for inorganic compounds by combination of density functional theory calculations and machine learning techniques
J Lee, A Seko, K Shitara, K Nakayama, I Tanaka
Physical Review B 93 (11), 115104, 2016
Free-electron creation at the 60° twin boundary in Bi2Te3
KC Kim, J Lee, BK Kim, WY Choi, HJ Chang, SO Won, B Kwon, SK Kim, ...
Nature communications 7, 12449, 2016
Theoretical and experimental studies on the electronic structure of crystalline and amorphous ZnSnO3 thin films
J Lee, DY Cho, J Jung, U Ki Kim, S Ho Rha, C Seong Hwang, JH Choi
Applied Physics Letters 102 (24), 242111, 2013
Study on the defects in metal–organic chemical vapor deposited zinc tin oxide thin films using negative bias illumination stability analysis
UK Kim, SH Rha, JH Kim, YJ Chung, J Jung, ES Hwang, J Lee, TJ Park, ...
Journal of Materials Chemistry C 1 (40), 6695-6702, 2013
Growth, quantitative growth analysis, and applications of graphene on γ-Al2O3 catalysts
J Park, J Lee, JH Choi, DK Hwang, YW Song
Scientific reports 5, 11839, 2015
Thermodynamic stability of various phases of zinc tin oxides from ab initio calculations
J Lee, SC Lee, CS Hwang, JH Choi
Journal of Materials Chemistry C 1 (39), 6364-6374, 2013
Improvement in the performance of tin oxide thin-film transistors by alumina doping
MS Huh, BS Yang, S Oh, J Lee, K Yoon, JK Jeong, CS Hwang, HJ Kim
Electrochemical and Solid-State Letters 12 (10), H385-H387, 2009
The Impact of Carbon Concentration on the Crystalline Phase and Dielectric Constant of Atomic Layer Deposited HfO2 Films on Ge Substrate
HS Jung, SH Jeon, HK Kim, IH Yu, SY Lee, J Lee, YJ Chung, DY Cho, ...
ECS Journal of Solid State Science and Technology 1 (2), N33-N37, 2012
Improved electrical properties of tin-oxide films by using ultralow-pressure sputtering process
MS Huh, BS Yang, J Lee, J Heo, SJ Han, K Yoon, SH Yang, CS Hwang, ...
Thin Solid Films 518 (4), 1170-1173, 2009
Properties of atomic layer deposited HfO2 films on Ge substrates depending on process temperatures
HS Jung, HK Kim, IH Yu, SY Lee, J Lee, J Park, JH Jang, SH Jeon, ...
Journal of The Electrochemical Society 159 (4), G33-G39, 2012
Electrical and bias temperature instability characteristics of n-type field-effect transistors using HfO x N y gate dielectrics
HS Jung, HK Kim, JH Kim, SJ Won, DY Cho, J Lee, SY Lee, CS Hwang, ...
Journal of The Electrochemical Society 157 (5), G121-G126, 2010
Improved growth and electrical properties of atomic-layer-deposited metal-oxide film by discrete feeding method of metal precursor
TJ Park, JH Kim, JH Jang, UK Kim, SY Lee, J Lee, HS Jung, CS Hwang
Chemistry of Materials 23 (7), 1654-1658, 2011
Effects of Annealing Environment on Interfacial Reactions and Electrical Properties of Ultrathin SrTiO3 on Si
TJ Park, JH Kim, JH Jang, J Lee, SW Lee, SY Lee, HS Jung, CS Hwang
Journal of The Electrochemical Society 156 (9), G129-G133, 2009
Enhancement of Initial Growth of ZnO Films on Layer-Structured Bi2Te3 by Atomic Layer Deposition
KC Kim, CJ Cho, J Lee, HJ Kim, DS Jeong, SH Baek, JS Kim, SK Kim
Chemistry of Materials 26 (22), 6448-6453, 2014
Effect of oxygen vacancy on the structural and electronic characteristics of crystalline Zn 2 SnO 4
J Lee, Y Kang, CS Hwang, S Han, SC Lee, JH Choi
Journal of Materials Chemistry C 2 (39), 8381-8387, 2014
Reduction of Charge Trapping in Film on Ge Substrates by Atomic Layer Deposition of Various Passivating Interfacial Layers
HS Jung, IH Yu, HK Kim, SY Lee, J Lee, Y Choi, YJ Chung, NI Lee, ...
IEEE Transactions on Electron Devices 59 (9), 2350-2356, 2012
Ab initio study on the structural characteristics of amorphous Zn2SnO4
J Lee, Y Kang, S Han, C Seong Hwang, JH Choi
Applied Physics Letters 103 (25), 252102, 2013
Symmetry-dependent interfacial reconstruction to compensate polar discontinuity at perovskite oxide interfaces (LaAlO3/SrTiO3 and LaAlO3/CaTiO3)
J Lee, JK Choi, SY Moon, J Park, JS Kim, CS Hwang, SH Baek, JH Choi, ...
Applied Physics Letters 106 (7), 071601, 2015
The Bias Temperature Instability Characteristics of In Situ Nitrogen Incorporated ZrO x N y Gate Dielectrics
HS Jung, JM Park, HK Kim, JH Kim, SJ Won, J Lee, SY Lee, CS Hwang, ...
Electrochemical and Solid-State Letters 13 (9), G71-G74, 2010
Bias temperature instability characteristics of n-and p-type field effect transistors using HfO2 gate dielectrics and metal gate
HS Jung, JH Kim, J Lee, SY Lee, UK Kim, CS Hwang, JM Park, WH Kim, ...
Journal of The Electrochemical Society 157 (3), H355-H360, 2010
論文 1–20