The effect of gamma irradiation on electrical and dielectric properties of organic-based Schottky barrier diodes (SBDs) at room temperature H Uslu, M Yıldırım, Ş Altındal, P Durmuş Radiation Physics and Chemistry 81 (4), 362-369, 2012 | 32 | 2012 |
Diode-to-diode variation in dielectric parameters of identically prepared metal-ferroelectric-semiconductor structures HG Çetinkaya, M Yıldırım, P Durmuş, Ş Altındal Journal of Alloys and Compounds 728, 896-901, 2017 | 26 | 2017 |
Effect of iron phthalocyanine (FePc) concentration on electrical and dielectric properties of the nematic liquid crystal composites M Yıldırım, O Köysal, G Önsal, E Gümüş Journal of Molecular Liquids 223, 868-872, 2016 | 25 | 2016 |
Controlling the electrical characteristics of Al/p-Si structures through Bi4Ti3O12 interfacial layer P Durmuş, M Yıldırım, Ş Altındal Current Applied Physics 13 (8), 1630-1636, 2013 | 24 | 2013 |
Influence of interfacial layer thickness on frequency dependent dielectric properties and electrical conductivity in Al/Bi4Ti3O12/p-Si structures P Durmuş, M Yıldırım Journal of Vacuum Science & Technology A 32 (6), 2014 | 23 | 2014 |
Investigation of the inhomogeneous barrier height of an Au/Bi4Ti3O12/n-Si structure through Gaussian distribution of barrier height M Gökçen, M Yıldırım Chinese Physics B 21 (12), 128502, 2012 | 23 | 2012 |
On the possible conduction mechanisms in Rhenium/n-GaAs Schottky barrier diodes fabricated by pulsed laser deposition in temperature range of 60–400 K H Durmuş, M Yıldırım, Ş Altındal Journal of Materials Science: Materials in Electronics 30, 9029-9037, 2019 | 22 | 2019 |
Correlation between barrier height and ideality factor in identically prepared diodes of Al/Bi4Ti3O12/p-Si (MFS) structure with barrier inhomogeneity HG Çetinkaya, M Yıldırım, P Durmuş, Ş Altındal Journal of Alloys and Compounds 721, 750-756, 2017 | 19 | 2017 |
UV illumination effects on electrical characteristics of metal–polymer–semiconductor diodes fabricated with new poly (propylene glycol)-b-polystyrene block copolymer M Gökçen, M Yıldırım, A Demir, A Allı, S Allı, B Hazer Composites Part B: Engineering 57, 8-12, 2014 | 19 | 2014 |
A comparative study regarding effects of interfacial ferroelectric Bi4Ti3O12 (BTO) layer on electrical characteristics of Au/n-Si structures M Yildirim, M Gökçen Bulletin of Materials Science 37, 257-262, 2014 | 17 | 2014 |
A comparison study regarding Al/p-Si and Al/(carbon nanofiber–PVP)/p-Si diodes: current/impedance–voltage (I/Z–V) characteristics Ö Sevgili, M Yıldırım, Y Azizian-Kalandaragh, Ş Altındal Applied Physics A 126, 1-9, 2020 | 16 | 2020 |
Current conduction and steady-state photoconductivity in photodiodes with bismuth titanate interlayer M Yıldırım Thin Solid Films 615, 300-304, 2016 | 14 | 2016 |
Dielectric characteristics of gamma irradiated Au/SnO2/n-Si/Au (MOS) capacitor A Tataroğlu, M Yıldırım, HM Baran Materials science in semiconductor processing 28, 89-93, 2014 | 14 | 2014 |
Dielectric and AC electrical conductivity characteristics of liquid crystal doped with graphene M Gökçen, M Yıldırım, O Köysal The European Physical Journal-Applied Physics 60 (3), 30104, 2012 | 14 | 2012 |
The effect of temperature on the electrical characteristics of Ti/n-GaAs Schottky diodes H Durmuş, A Tataroğlu, Ş Altındal, M Yıldırım Current Applied Physics 44, 85-89, 2022 | 13 | 2022 |
Synthesis & chemical and dielectric characterization of poly (linoleic acid)-g-poly (dimethylaminoethyl methacrylate): A novel high-κ graft copolymer M Yıldırım, A Allı, G Önsal, N Gök, O Köysal Composites Part B: Engineering 117, 43-48, 2017 | 13 | 2017 |
Investigation on dielectric properties of atomic layer deposited Al2O3 dielectric films DE Yıldız, M Yıldırım, M Gökçen Journal of Vacuum Science & Technology A 32 (3), 2014 | 12 | 2014 |
Electrical and Dielectric Properties of a n-Si Schottky Barrier Diode with Bismuth Titanate Interlayer: Effect of Temperature M Yıldırım, C Şahin, Ş Altındal, P Durmuş Journal of Electronic Materials 46, 1895-1901, 2017 | 11 | 2017 |
Gaussian distribution of inhomogeneous barrier height in Au/n-Si (111) Schottky barrier diodes at low temperatures P Durmuş, M Yıldırım Materials science in semiconductor processing 27, 145-149, 2014 | 11 | 2014 |
Analyses of temperature-dependent interface states, series resistances, and AC electrical conductivities of Al/p-Si and Al/Bi4Ti3O12/p-Si structures by using the admittance … M Yıldırım, P Durmuş, Ş Altındal Chinese Physics B 22 (10), 108502, 2013 | 11 | 2013 |