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Wei Dong Zhang
Wei Dong Zhang
Professor of Nanoelectronics, Liverpool John Moores University
Verified email at ljmu.ac.uk
Title
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Cited by
Year
Recommended methods to study resistive switching devices
M Lanza, HSP Wong, E Pop, D Ielmini, D Strukov, BC Regan, L Larcher, ...
Advanced Electronic Materials 5 (1), 1800143, 2019
5692019
Giant ferroelectric resistance switching controlled by a modulatory terminal for low‐power neuromorphic in‐memory computing
F Xue, X He, Z Wang, JRD Retamal, Z Chai, L Jing, C Zhang, H Fang, ...
Advanced Materials 33 (21), 2008709, 2021
802021
Committee machines—a universal method to deal with non-idealities in memristor-based neural networks
D Joksas, P Freitas, Z Chai, WH Ng, M Buckwell, C Li, WD Zhang, Q Xia, ...
Nature communications 11 (1), 4273, 2020
722020
The role of nitrogen doping in ALD Ta2O5 and its influence on multilevel cell switching in RRAM
N Sedghi, H Li, IF Brunell, K Dawson, RJ Potter, Y Guo, JT Gibbon, ...
Applied Physics Letters 110 (10), 2017
682017
Two-Pulse : A New Method for Characterizing Electron Traps in the Bulk of Dielectric Stacks
WD Zhang, B Govoreanu, XF Zheng, DR Aguado, M Rosmeulen, ...
IEEE Electron Device Letters 29 (9), 1043-1046, 2008
642008
Energy distribution of positive charges in gate dielectric: Probing technique and impacts of different defects
SWM Hatta, Z Ji, JF Zhang, M Duan, WD Zhang, N Soin, B Kaczer, ...
IEEE Transactions on Electron Devices 60 (5), 1745-1753, 2013
562013
A single pulse charge pumping technique for fast measurements of interface states
L Lin, Z Ji, JF Zhang, WD Zhang, B Kaczer, S De Gendt, G Groeseneken
IEEE Transactions on Electron Devices 58 (5), 1490-1498, 2011
522011
Impact of RTN on pattern recognition accuracy of RRAM-based synaptic neural network
Z Chai, P Freitas, W Zhang, F Hatem, JF Zhang, J Marsland, B Govoreanu, ...
IEEE Electron Device Letters 39 (11), 1652-1655, 2018
482018
Reliable time exponents for long term prediction of negative bias temperature instability by extrapolation
R Gao, AB Manut, Z Ji, J Ma, M Duan, JF Zhang, J Franco, SWM Hatta, ...
IEEE Transactions on Electron Devices 64 (4), 1467-1473, 2017
462017
Two types of neutral electron traps generated in the gate silicon dioxide
WD Zhang, JF Zhang, A Lalor, D Burton, GV Groeseneken, R Degraeve
IEEE Transactions on Electron Devices 49 (11), 1868-1875, 2002
452002
Assessment of capture cross sections and effective density of electron traps generated in silicon dioxides
MH Chang, JF Zhang, WD Zhang
IEEE transactions on electron devices 53 (6), 1347-1354, 2006
442006
A low-power and high-speed True Random Number Generator using generated RTN
J Brown, R Gao, Z Ji, J Chen, J Wu, J Zhang, B Zhou, Q Shi, J Crowford, ...
2018 IEEE Symposium on VLSI Technology, 95-96, 2018
422018
New analysis method for time-dependent device-to-device variation accounting for within-device fluctuation
M Duan, JF Zhang, Z Ji, WD Zhang, B Kaczer, T Schram, R Ritzenthaler, ...
IEEE transactions on electron devices 60 (8), 2505-2511, 2013
392013
Energy and Spatial Distributions of Electron Traps Throughout Stacks as the IPD in Flash Memory Application
XF Zheng, WD Zhang, B Govoreanu, DR Aguado, JF Zhang, J Van Houdt
IEEE Transactions on Electron Devices 57 (1), 288-296, 2009
392009
Negative bias temperature instability lifetime prediction: Problems and solutions
Z Ji, S Hatta, JF Zhang, JG Ma, W Zhang, N Soin, B Kaczer, S De Gendt, ...
2013 IEEE International Electron Devices Meeting, 15.6. 1-15.6. 4, 2013
362013
Defect loss: A new concept for reliability of MOSFETs
M Duan, JF Zhang, Z Ji, W Zhang, B Kaczer, S De Gendt, G Groeseneken
IEEE electron device letters 33 (4), 480-482, 2012
352012
Insight into electron traps and their energy distribution under positive bias temperature stress and hot carrier aging
M Duan, JF Zhang, Z Ji, WD Zhang, D Vigar, A Asenov, L Gerrer, ...
IEEE Transactions on Electron Devices 63 (9), 3642-3648, 2016
332016
On the interface states generated under different stress conditions
WD Zhang, JF Zhang, MJ Uren, G Groeseneken, R Degraeve, M Lalor, ...
Applied Physics Letters 79 (19), 3092-3094, 2001
312001
Tailoring the synaptic properties of a-IGZO memristors for artificial deep neural networks
ME Pereira, J Deuermeier, P Freitas, P Barquinha, W Zhang, R Martins, ...
APL Materials 10 (1), 2022
302022
Endurance improvement of more than five orders in GexSe1-x OTS selectors by using a novel refreshing program scheme
F Hatem, Z Chai, W Zhang, A Fantini, R Degraeve, S Clima, D Garbin, ...
2019 IEEE International Electron Devices Meeting (IEDM), 35.2. 1-35.2. 4, 2019
302019
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