Marta Bagatin
Marta Bagatin
所属不明
確認したメール アドレス: dei.unipd.it
タイトル引用先
Radiation effects in flash memories
S Gerardin, M Bagatin, A Paccagnella, K Grürmann, F Gliem, TR Oldham, ...
IEEE Transactions on Nuclear Science 60 (3), 1953-1969, 2013
1042013
A new hardware/software platform and a new 1/E neutron source for soft error studies: Testing FPGAs at the ISIS facility
M Violante, L Sterpone, A Manuzzato, S Gerardin, P Rech, M Bagatin, ...
IEEE Transactions on Nuclear Science 54 (4), 1184-1189, 2007
942007
TID sensitivity of NAND flash memory building blocks
M Bagatin, G Cellere, S Gerardin, A Paccagnella, A Visconti, S Beltrami
IEEE Transactions on Nuclear Science 56 (4), 1909-1913, 2009
632009
Key contributions to the cross section of NAND flash memories irradiated with heavy ions
M Bagatin, S Gerardin, G Cellere, A Paccagnella, A Visconti, S Beltrami, ...
IEEE Transactions on Nuclear Science 55 (6), 3302-3308, 2008
552008
Error instability in floating gate flash memories exposed to TID
M Bagatin, S Gerardin, G Cellere, A Paccagnella, A Visconti, M Bonanomi, ...
IEEE Transactions on Nuclear Science 56 (6), 3267-3273, 2009
452009
Catastrophic failure in highly scaled commercial NAND flash memories
F Irom, DN Nguyen, M Bagatin, G Cellere, S Gerardin, A Paccagnella
IEEE Transactions on Nuclear Science 57 (1), 266-271, 2010
422010
Impact of NBTI aging on the single-event upset of SRAM cells
M Bagatin, S Gerardin, A Paccagnella, F Faccio
IEEE Transactions on Nuclear Science 57 (6), 3245-3250, 2010
412010
Heavy-ion induced threshold voltage tails in floating gate arrays
S Gerardin, M Bagatin, A Paccagnella, G Cellere, A Visconti, M Bonanomi, ...
IEEE Transactions on Nuclear Science 57 (6), 3199-3205, 2010
362010
Increase in the heavy-ion upset cross section of floating gate cells previously exposed to TID
M Bagatin, S Gerardin, A Paccagnella, G Cellere, A Visconti, M Bonanomi
IEEE Transactions on Nuclear Science 57 (6), 3407-3413, 2010
312010
Annealing of heavy-ion induced floating gate errors: LET and feature size dependence
M Bagatin, S Gerardin, G Cellere, A Paccagnella, A Visconti, S Beltrami, ...
IEEE Transactions on Nuclear Science 57 (4), 1835-1841, 2010
312010
Impact of technology scaling on the heavy-ion upset cross section of multi-level floating gate cells
M Bagatin, S Gerardin, A Paccagnella, A Visconti
IEEE Transactions on Nuclear Science 58 (3), 969-974, 2011
282011
CHIPIX65: Developments on a new generation pixel readout ASIC in CMOS 65 nm for HEP experiments
N Demaria, G Dellacasa, G Mazza, A Rivetti, MDDR Rolo, E Monteil, ...
2015 6th International Workshop on Advances in Sensors and Interfaces (IWASI …, 2015
242015
Temperature dependence of neutron-induced soft errors in SRAMs
M Bagatin, S Gerardin, A Paccagnella, C Andreani, G Gorini, CD Frost
Microelectronics Reliability 52 (1), 289-293, 2012
242012
Impact of heavy-ion strikes on minimum-size MOSFETs with ultra-thin gate oxide
S Gerardin, M Bagatin, A Cester, A Paccagnella, B Kaczer
IEEE transactions on nuclear science 53 (6), 3675-3680, 2006
242006
Single and multiple cell upsets in 25-nm NAND flash memories
M Bagatin, S Gerardin, A Paccagnella, V Ferlet-Cavrois
IEEE Transactions on Nuclear Science 60 (4), 2675-2681, 2013
222013
Effects of high energy x ray and proton irradiation on lead zirconate titanate thin films' dielectric and piezoelectric response
Y Bastani, AY Cortes-Pena, AD Wilson, S Gerardin, M Bagatin, ...
Applied Physics Letters 102 (19), 192906, 2013
212013
Enhancement of transistor-to-transistor variability due to total dose effects in 65-nm MOSFETs
S Gerardin, M Bagatin, D Cornale, L Ding, S Mattiazzo, A Paccagnella, ...
IEEE Transactions on Nuclear Science 62 (6), 2398-2403, 2015
202015
Degradation of sub 40-nm NAND flash memories under total dose irradiation
S Gerardin, M Bagatin, A Paccagnella, V Ferlet-Cavrois
IEEE Transactions on Nuclear Science 59 (6), 2952-2958, 2012
202012
Nano-Semiconductors: Devices and Technology
K Iniewski
CRC press, 2011
202011
Neutron-induced soft errors in advanced flash memories
G Cellere, S Gerardin, M Bagatin, A Paccagnella, A Visconti, M Bonanomi, ...
2008 IEEE International Electron Devices Meeting, 1-4, 2008
202008
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