| Effects of cusp-shaped magnetic field on melt convection and oxygen transport in an industrial CZ-Si crystal growth X Liu, L Liu, Z Li, Y Wang Journal of Crystal Growth 354 (1), 101-108, 2012 | 40 | 2012 |
| Heat transfer in an industrial directional solidification furnace with multi-heaters for silicon ingots Z Li, L Liu, X Liu, Y Zhang, J Xiong Journal of Crystal Growth 385, 9-15, 2014 | 38 | 2014 |
| Effects of argon flow on melt convection and interface shape in a directional solidification process for an industrial-size solar silicon ingot Z Li, L Liu, X Liu, Y Zhang, J Xiong Journal of Crystal Growth 360, 87-91, 2012 | 32 | 2012 |
| Effects of static magnetic fields on thermal fluctuations in the melt of industrial CZ-Si crystal growth X Liu, L Liu, Z Li, Y Wang Journal of Crystal Growth 360, 38-42, 2012 | 31 | 2012 |
| Numerical investigation of carbon contamination during the melting process of Czochralski silicon crystal growth X Liu, B Gao, K Kakimoto Journal of Crystal Growth 417, 58-64, 2015 | 30 | 2015 |
| Large-eddy simulation of melt turbulence in a 300-mm Cz–Si crystal growth L Liu, X Liu, Y Wang International journal of heat and mass transfer 55 (1-3), 53-60, 2012 | 23 | 2012 |
| Growth of semiconductor silicon crystals K Kakimoto, B Gao, X Liu, S Nakano Progress in Crystal Growth and Characterization of Materials 62 (2), 273-285, 2016 | 20 | 2016 |
| Transient global modeling for the pulling process of Czochralski silicon crystal growth. II. Investigation on segregation of oxygen and carbon X Liu, H Harada, Y Miyamura, X Han, S Nakano, S Nishizawa, K Kakimoto Journal of Crystal Growth 532, 125404, 2020 | 15 | 2020 |
| Transient global modeling for the pulling process of Czochralski silicon crystal growth. I. Principles, formulation, and implementation of the model X Liu, H Harada, Y Miyamura, X Han, S Nakano, S Nishizawa, K Kakimoto Journal of Crystal Growth 532, 125405, 2020 | 14 | 2020 |
| Data-driven optimization and experimental validation for the lab-scale mono-like silicon ingot growth by directional solidification X Liu, Y Dang, H Tanaka, Y Fukuda, K Kutsukake, T Kojima, T Ujihara, ... ACS omega 7 (8), 6665-6673, 2022 | 13 | 2022 |
| Effect of the packing structure of silicon chunks on the melting process and carbon reduction in Czochralski silicon crystal growth X Liu, S Nakano, K Kakimoto Journal of Crystal Growth 468, 595-600, 2017 | 13 | 2017 |
| Development of carbon transport and modeling in Czochralski silicon crystal growth X Liu, S Nakano, K Kakimoto Crystal Research and Technology 52 (1), 1600221, 2017 | 12 | 2017 |
| Numerical analyses and experimental validations on transport and control of carbon in Czochralski silicon crystal growth X Liu, H Harada, Y Miyamura, X Han, S Nakano, S Nishizawa, K Kakimoto Journal of Crystal Growth 499, 8-12, 2018 | 11 | 2018 |
| 3D numerical study of the asymmetric phenomenon in 200 mm floating zone silicon crystal growth XF Han, X Liu, S Nakano, H Harada, Y Miyamura, K Kakimoto Journal of Crystal Growth 532, 125403, 2020 | 10 | 2020 |
| Numerical investigation of carbon and silicon carbide contamination during the melting process of the Czochralski silicon crystal growth X Liu, B Gao, S Nakano, K Kakimoto Crystal Research and Technology 50 (6), 458-463, 2015 | 10 | 2015 |
| Reduction of carbon contamination during the melting process of Czochralski silicon crystal growth X Liu, B Gao, S Nakano, K Kakimoto Journal of Crystal Growth 474, 3-7, 2017 | 9 | 2017 |
| Modeling-based design of the control pattern for uniform macrostep morphology in solution growth of sic Y Dang, X Liu, C Zhu, Y Fukami, S Ma, H Zhou, X Liu, K Kutsukake, ... Crystal Growth & Design 23 (2), 1023-1032, 2023 | 7 | 2023 |
| 3D numerical simulation of free surface shape during the crystal growth of floating zone (FZ) silicon XF Han, X Liu, S Nakano, H Harada, Y Miyamura, K Kakimoto Journal of Crystal Growth 483, 269-274, 2018 | 7 | 2018 |
| Numerical investigation of solute evaporation in crystal growth from solution: A case study of SiC growth by TSSG method Y Dang, C Zhu, X Liu, W Yu, X Liu, K Suzuki, T Furusho, S Harada, ... Journal of Crystal Growth 579, 126448, 2022 | 6 | 2022 |
| 3D global heat transfer model on floating zone for silicon single crystal growth XF Han, X Liu, S Nakano, H Harada, Y Miyamura, K Kakimoto Crystal Research and Technology 53 (5), 1700246, 2018 | 6 | 2018 |
Koichi KakimotoProfessor, Kyushu University確認したメール アドレス: riam.kyushu-u.ac.jp
