Thomas Wunderer
Thomas Wunderer
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Process for selective masking of III-N layers and for the preparation of free-standing III-N layers or of devices, and products obtained thereby
F Habel, F Scholz, B Neubert, P Brückner, T Wunderer
US Patent 7,727,332, 2010
Effect of strain and barrier composition on the polarization of light emission from AlGaN/AlN quantum wells
JE Northrup, CL Chua, Z Yang, T Wunderer, M Kneissl, NM Johnson, ...
Applied Physics Letters 100 (2), 021101, 2012
Pseudomorphically grown ultraviolet C photopumped lasers on bulk AlN substrates
T Wunderer, CL Chua, Z Yang, JE Northrup, NM Johnson, GA Garrett, ...
Applied Physics Express 4 (9), 092101, 2011
Process optimization for the effective reduction of threading dislocations in MOVPE grown GaN using in situ deposited SiNx masks
J Hertkorn, F Lipski, P Brückner, T Wunderer, SB Thapa, F Scholz, ...
Journal of Crystal Growth 310 (23), 4867-4870, 2008
Piezoelectric fields in quantum wells on different crystal facets
M Feneberg, F Lipski, R Sauer, K Thonke, T Wunderer, B Neubert, ...
Applied Physics Letters 89 (24), 242112, 2006
Optically pumped UV lasers grown on bulk AlN substrates
T Wunderer, CL Chua, JE Northrup, Z Yang, NM Johnson, M Kneissl, ...
physica status solidi c 9 (3‐4), 822-825, 2012
Bright semipolar blue light emitting diode on side facets of selectively grown GaN stripes
T Wunderer, P Brückner, B Neubert, F Scholz, M Feneberg, F Lipski, ...
Applied physics letters 89 (4), 041121, 2006
Differential phase contrast 2.0—Opening new “fields” for an established technique
M Lohr, R Schregle, M Jetter, C Wächter, T Wunderer, F Scholz, J Zweck
Ultramicroscopy 117, 7-14, 2012
Optimization of nucleation and buffer layer growth for improved GaN quality
J Hertkorn, P Brückner, SB Thapa, T Wunderer, F Scholz, M Feneberg, ...
Journal of crystal growth 308 (1), 30-36, 2007
Three‐dimensional GaN for semipolar light emitters
T Wunderer, M Feneberg, F Lipski, J Wang, RAR Leute, S Schwaiger, ...
physica status solidi (b) 248 (3), 549-560, 2011
Enhanced vertical and lateral hole transport in high aluminum-containing AlGaN for deep ultraviolet light emitters
B Cheng, S Choi, JE Northrup, Z Yang, C Knollenberg, M Teepe, ...
Applied Physics Letters 102 (23), 231106, 2013
basal plane stacking fault in GaN: Origin of the 3.32 eV luminescence band
I Tischer, M Feneberg, M Schirra, H Yacoub, R Sauer, K Thonke, ...
Physical Review B 83 (3), 035314, 2011
Shroud for disk drive with particulate filter elements
GJ Smith
US Patent 6,654,201, 2003
Growth and coalescence behavior of semipolar (11̄22) GaN on pre‐structured r‐plane sapphire substrates
S Schwaiger, S Metzner, T Wunderer, I Argut, J Thalmair, F Lipski, ...
physica status solidi (b) 248 (3), 588-593, 2011
Planar semipolar GaN on sapphire
S Schwaiger, I Argut, T Wunderer, R Rösch, F Lipski, J Biskupek, U Kaiser, ...
Applied Physics Letters 96 (23), 231905, 2010
Fabrication of freestanding 2 ″‐GaN wafers by hydride vapour phase epitaxy and self‐separation during cooldown
F Lipski, T Wunderer, S Schwaiger, F Scholz
physica status solidi (a) 207 (6), 1287-1291, 2010
Polarized light emission from semipolar GaInN quantum wells on GaN facets
M Feneberg, F Lipski, R Sauer, K Thonke, P Brückner, B Neubert, ...
Journal of Applied Physics 101 (5), 053530, 2007
Direct determination of the silicon donor ionization energy in homoepitaxial AlN from photoluminescence two-electron transitions
B Neuschl, K Thonke, M Feneberg, R Goldhahn, T Wunderer, Z Yang, ...
Applied Physics Letters 103 (12), 122105, 2013
The 2020 UV emitter roadmap
H Amano, R Collazo, C De Santi, S Einfeldt, M Funato, J Glaab, ...
Journal of Physics D: Applied Physics 53 (50), 503001, 2020
Ultraviolet light emitting devices having compressively strained light emitting layer for enhanced light extraction
JE Northrup, C Chua, M Kneissl, T Wunderer, NM Johnson
US Patent 9,252,329, 2016
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