| Flat panel displays comprising a thin-film transistor having a semiconductive oxide in its channel and methods of fabricating the same for use in flat panel displays JH Lee, D Yang, TH Ihn, DH Kim, SY Hong, S Jung, CO Jeong, EG Lee US Patent 7,772,021, 2010 | 3681 | 2010 |
| 42.2: World's largest (15‐inch) XGA AMLCD panel using IGZO oxide TFT J Lee, D Kim, D Yang, S Hong, K Yoon, P Hong, C Jeong, HS Park, ... SID Symposium Digest of Technical Papers 39 (1), 625-628, 2008 | 869 | 2008 |
| Amorphous hafnium-indium-zinc oxide semiconductor thin film transistors CJ Kim, S Kim, JH Lee, JS Park, S Kim, J Park, E Lee, J Lee, Y Park, ... Applied Physics Letters 95 (25), 2009 | 275 | 2009 |
| Metal oxide thin film phototransistor for remote touch interactive displays SE Ahn, I Song, S Jeon, YW Jeon, Y Kim, C Kim, B Ryu, JH Lee, A Nathan, ... Advanced materials 24 (19), 2631-2636, 2012 | 166 | 2012 |
| Persistent photoconductivity in Hf–In–Zn–O thin film transistors K Ghaffarzadeh, A Nathan, J Robertson, S Kim, S Jeon, C Kim, UI Chung, ... Applied Physics Letters 97 (14), 2010 | 162 | 2010 |
| Semiconductor device and manufacturing method thereof JH Lee, DH Kim, TH Ihn US Patent 8,067,276, 2011 | 151 | 2011 |
| Instability in threshold voltage and subthreshold behavior in Hf–In–Zn–O thin film transistors induced by bias-and light-stress K Ghaffarzadeh, A Nathan, J Robertson, S Kim, S Jeon, C Kim, UI Chung, ... Applied Physics Letters 97 (11), 2010 | 132 | 2010 |
| Thin film transistor array panel including layered line structure and method for manufacturing the same JH Lee, YH Bae, BS Cho, CO Jeong US Patent 7,619,254, 2009 | 130 | 2009 |
| Atomic layer deposition for oxide semiconductor thin film transistors: Advances in research and development J Sheng, JH Lee, WH Choi, TH Hong, MJ Kim, JS Park Journal of Vacuum Science & Technology A 36 (6), 2018 | 111 | 2018 |
| Effect of film thickness and annealing temperature on hillock distributions in pure Al films SJ Hwang, JH Lee, CO Jeong, YC Joo Scripta Materialia 56 (1), 17-20, 2007 | 106 | 2007 |
| An investigation of contact resistance between metal electrodes and amorphous gallium–indium–zinc oxide (a-GIZO) thin-film transistors WS Kim, YK Moon, KT Kim, JH Lee, JW Park Thin Solid Films 518 (22), 6357-6360, 2010 | 101 | 2010 |
| Liquid crystal display and method of manufacturing the same JH Lee, DH Kim US Patent 8,164,152, 2012 | 99 | 2012 |
| Thin film transistor array substrate having improved electrical characteristics and method of manufacturing the same JH Lee, KS Yoon, K Son, DH Kim, CO Jeong US Patent 7,956,947, 2011 | 97 | 2011 |
| Effects of metal electrode on the electrical performance of amorphous In–Ga–Zn–O thin film transistor JR Yim, SY Jung, HW Yeon, JY Kwon, YJ Lee, JH Lee, YC Joo Japanese journal of applied physics 51 (1R), 011401, 2011 | 83 | 2011 |
| Subgap density-of-states-based amorphous oxide thin film transistor simulator (DeAOTS) YW Jeon, S Kim, S Lee, DM Kim, DH Kim, J Park, CJ Kim, I Song, Y Park, ... IEEE Transactions on Electron Devices 57 (11), 2988-3000, 2010 | 82 | 2010 |
| Effects of metal electrode on the electrical performance of amorphous In–Ga–Zn–O thin film transistor JR Yim, SY Jung, HW Yeon, JY Kwon, YJ Lee, JH Lee, YC Joo Japanese journal of applied physics 51 (1R), 011401, 2011 | 81 | 2011 |
| Charge storage and photoluminescence characteristics of silicon oxide embedded Ge nanocrystal trilayer structures K Das, M NandaGoswami, R Mahapatra, GS Kar, A Dhar, HN Acharya, ... Applied physics letters 84 (8), 1386-1388, 2004 | 78 | 2004 |
| Effect of the liquid‐phase characteristic on the microstructures and dielectric properties of donor‐(Niobium) and acceptor‐(Magnesium) doped barium titanate SH Yoon, JH Lee, DY Kim, NM Hwang Journal of the American Ceramic Society 86 (1), 88-92, 2003 | 75 | 2003 |
| Cation composition effects on electronic structures of In-Sn-Zn-O amorphous semiconductors JY Noh, H Kim, HH Nahm, YS Kim, D Hwan Kim, BD Ahn, JH Lim, ... Journal of Applied Physics 113 (18), 2013 | 73 | 2013 |
| Impact of oxygen flow rate on the instability under positive bias stresses in DC-sputtered amorphous InGaZnO thin-film transistors S Kim, YW Jeon, Y Kim, D Kong, HK Jung, MK Bae, JH Lee, B Du Ahn, ... IEEE Electron Device Letters 33 (1), 62-64, 2011 | 73 | 2011 |
Sangwook KimSAIT(Samsung Advanced Institute of Technology)確認したメール アドレス: samsung.com
