| Electrooptical effects in silicon R Soref, B Bennett IEEE journal of quantum electronics 23 (1), 123-129, 1987 | 3341 | 1987 |
| Carrier-induced change in refractive index of InP, GaAs and InGaAsP BR Bennett, RA Soref, JA Del Alamo IEEE Journal of Quantum Electronics 26 (1), 113-122, 1990 | 1300 | 1990 |
| Robust electrical spin injection into a semiconductor heterostructure BT Jonker, YD Park, BR Bennett, HD Cheong, G Kioseoglou, A Petrou Physical Review B 62 (12), 8180, 2000 | 665 | 2000 |
| Observation of spin injection at a ferromagnet-semiconductor interface PR Hammar, BR Bennett, MJ Yang, M Johnson Physical Review Letters 83 (1), 203, 1999 | 658 | 1999 |
| Antimonide-based compound semiconductors for electronic devices: A review BR Bennett, R Magno, JB Boos, W Kruppa, MG Ancona Solid-State Electronics 49 (12), 1875-1895, 2005 | 424 | 2005 |
| Kramers-Kronig analysis of electro-optical switching in silicon RA Soref, BR Bennett Integrated Optical Circuit Engineering IV 704, 32-37, 1987 | 281 | 1987 |
| Hybrid Hall effect device M Johnson, BR Bennett, MJ Yang, MM Miller, BV Shanabrook Applied Physics Letters 71 (7), 974-976, 1997 | 248 | 1997 |
| Evidence of a Hybridization Gap in``Semimetallic''InAs/GaSb Systems MJ Yang, CH Yang, BR Bennett, BV Shanabrook Physical review letters 78 (24), 4613, 1997 | 206 | 1997 |
| Auger coefficients in type-II quantum wells JR Meyer, CL Felix, WW Bewley, I Vurgaftman, EH Aifer, LJ Olafsen, ... Applied physics letters 73 (20), 2857-2859, 1998 | 202 | 1998 |
| Surface reconstruction phase diagrams for InAs, AlSb, and GaSb AS Bracker, MJ Yang, BR Bennett, JC Culbertson, WJ Moore Journal of crystal growth 220 (4), 384-392, 2000 | 191 | 2000 |
| Photoluminescence studies of selfassembled InSb, GaSb, and AlSb quantum dot heterostructures ER Glaser, BR Bennett, BV Shanabrook, R Magno Applied physics letters 68 (25), 3614-3616, 1996 | 190 | 1996 |
| Molecular beam epitaxial growth of InSb, GaSb, and AlSb nanometerscale dots on GaAs BR Bennett, R Magno, BV Shanabrook Applied physics letters 68 (4), 505-507, 1996 | 189 | 1996 |
| AlSb/InAs HEMT's for low-voltage, high-speed applications JB Boos, W Kruppa, BR Bennett, D Park, SW Kirchoefer, R Bass, ... IEEE Transactions on electron devices 45 (9), 1869-1875, 1998 | 171 | 1998 |
| Nanostructure patterns written in III–V semiconductors by an atomic force microscope R Magno, BR Bennett Applied Physics Letters 70 (14), 1855-1857, 1997 | 149 | 1997 |
| Fermi level unpinning of GaSb (100) using plasma enhanced atomic layer deposition of Al2O3 A Ali, HS Madan, AP Kirk, DA Zhao, DA Mourey, MK Hudait, RM Wallace, ... Applied Physics Letters 97 (14), 2010 | 141 | 2010 |
| Mobility enhancement in strained p-InGaSb quantum wells BR Bennett, MG Ancona, JB Boos, BV Shanabrook Applied Physics Letters 91 (4), 2007 | 128 | 2007 |
| Optimization of the Interface and a High-Mobility GaSb pMOSFET A Nainani, T Irisawa, Z Yuan, BR Bennett, JB Boos, Y Nishi, KC Saraswat IEEE Transactions on Electron Devices 58 (10), 3407-3415, 2011 | 124 | 2011 |
| Electrorefraction and electroabsorption in InP, GaAs, GaSb, InAs, and InSb B Bennett, R Soref IEEE journal of quantum electronics 23 (12), 2159-2166, 1987 | 114 | 1987 |
| Metallic III-V (001) surfaces: Violations of the electron counting model LJ Whitman, PM Thibado, SC Erwin, BR Bennett, BV Shanabrook Physical review letters 79 (4), 693, 1997 | 109 | 1997 |
| LongPeriod Magnetotelluric Measurements Near the Central California Coast: A LandLocked View of the Conductivity Structure Under the Pacific Ocean RL Mackie, BR Bennett, TR Madden Geophysical Journal 95 (1), 181-194, 1988 | 100 | 1988 |
BV ShanabrookNaval Research Lab在 mailaps.org 的电子邮件经过验证
