Hole-doped 2D InSe for spintronic applications K Iordanidou, M Houssa, J Kioseoglou, VV Afanas’ ev, A Stesmans, ...
ACS Applied Nano Materials 1 (12), 6656-6665, 2018
48 2018 Topological to trivial insulating phase transition in stanene M Houssa, B van den Broek, K Iordanidou, AKA Lu, G Pourtois, ...
Nano Research 9, 774-778, 2016
44 2016 Status of materials and device modelling for kesterite solar cells SN Hood, A Walsh, C Persson, K Iordanidou, D Huang, M Kumar, Z Jehl, ...
Journal of Physics: Energy 1 (4), 042004, 2019
43 2019 Intrinsic point defects in buckled and puckered arsenene: a first-principles study K Iordanidou, J Kioseoglou, VV Afanas’Ev, A Stesmans, M Houssa
Physical Chemistry Chemical Physics 19 (15), 9862-9871, 2017
42 2017 Impact of point defects on the electronic and transport properties of silicene nanoribbons K Iordanidou, M Houssa, B van den Broek, G Pourtois, VV Afanas’Ev, ...
Journal of Physics: Condensed Matter 28 (3), 035302, 2016
36 2016 Silicene on non-metallic substrates: Recent theoretical and experimental advances E Scalise, K Iordanidou, VV Afanas’ ev, A Stesmans, M Houssa
Nano Research 11, 1169-1182, 2018
35 2018 Functional silicene and stanene nanoribbons compared to graphene: electronic structure and transport B van den Broek, M Houssa, K Iordanidou, G Pourtois, VV Afanas’ev, ...
2D Materials 3 (1), 015001, 2016
30 2016 Contact Resistance at MoS2 -Based 2D Metal/Semiconductor Lateral Heterojunctions M Houssa, K Iordanidou, A Dabral, A Lu, G Pourtois, V Afanasiev, ...
ACS Applied Nano Materials 2 (2), 760-766, 2019
28 2019 Ferromagnetism and half-metallicity in two-dimensional monolayers induced by hole doping R Meng, M Houssa, K Iordanidou, G Pourtois, V Afanasiev, A Stesmans
Physical Review Materials 4 (7), 074001, 2020
26 2020 Ferromagnetism in two-dimensional hole-doped SnO M Houssa, K Iordanidou, G Pourtois, VV Afanas’ev, A Stesmans
AIP Advances 8 (5), 2018
23 2018 Point defects in MoS2: Comparison between first-principles simulations and electron spin resonance experiments M Houssa, K Iordanidou, G Pourtois, VV Afanas’ev, A Stesmans
Applied Surface Science 416, 853-857, 2017
20 2017 Contact resistance at graphene/MoS2 lateral heterostructures M Houssa, K Iordanidou, A Dabral, A Lu, R Meng, G Pourtois, ...
Applied Physics Letters 114 (16), 2019
17 2019 Electric field and strain tuning of 2D semiconductor van der Waals heterostructures for tunnel field-effect transistors K Iordanidou, R Mitra, N Shetty, S Lara-Avila, S Dash, S Kubatkin, J Wiktor
ACS Applied Materials & Interfaces 15 (1), 1762-1771, 2022
16 2022 Two-dimensional gallium and indium oxides from global structure searching: Ferromagnetism and half metallicity via hole doping R Meng, M Houssa, K Iordanidou, G Pourtois, V Afanasiev, A Stesmans
Journal of Applied Physics 128 (3), 2020
15 2020 Two-dimensional van der Waals heterostructures for tunnel-FET applications K Iordanidou, J Wiktor
Physical Review Materials 6 (8), 084001, 2022
14 2022 Impact of point defects and oxidation on the electronic properties of HfS2 monolayers K Iordanidou, M Houssa, G Pourtois, VV Afanas' ev, A Stesmans
ECS Journal of Solid State Science and Technology 5 (11), Q3054, 2016
13 2016 Oxygen and hydroxyl adsorption on MS2 (M = Mo, W, Hf) monolayers: a first‐principles molecular dynamics study K Iordanidou, M Houssa, G Pourtois, VV Afanas' ev, A Stesmans
physica status solidi (RRL)–Rapid Research Letters 10 (11), 787-791, 2016
12 2016 Doping-induced ferromagnetism in InSe and SnO monolayers M Houssa, R Meng, K Iordanidou, G Pourtois, VV Afanas’ ev, A Stesmans
Journal of Computational Electronics 20, 88-94, 2021
10 2021 Carrier-mediated ferromagnetism in two-dimensional PtS 2 K Iordanidou, M Houssa, C Persson
RSC advances 10 (2), 952-957, 2020
9 2020 Hole-doping induced ferromagnetism in monolayer SnO: A first-principles study M Houssa, K Iordanidou, G Pourtois, VV Afanas' ev, A Stesmans
ECS Transactions 80 (1), 339, 2017
9 2017