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Konstantina Iordanidou
Konstantina Iordanidou
Research Scientist, SINTEF Materials Physics- Oslo
Adresse e-mail validée de sintef.no - Page d'accueil
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Hole-doped 2D InSe for spintronic applications
K Iordanidou, M Houssa, J Kioseoglou, VV Afanas’ ev, A Stesmans, ...
ACS Applied Nano Materials 1 (12), 6656-6665, 2018
482018
Topological to trivial insulating phase transition in stanene
M Houssa, B van den Broek, K Iordanidou, AKA Lu, G Pourtois, ...
Nano Research 9, 774-778, 2016
442016
Status of materials and device modelling for kesterite solar cells
SN Hood, A Walsh, C Persson, K Iordanidou, D Huang, M Kumar, Z Jehl, ...
Journal of Physics: Energy 1 (4), 042004, 2019
432019
Intrinsic point defects in buckled and puckered arsenene: a first-principles study
K Iordanidou, J Kioseoglou, VV Afanas’Ev, A Stesmans, M Houssa
Physical Chemistry Chemical Physics 19 (15), 9862-9871, 2017
422017
Impact of point defects on the electronic and transport properties of silicene nanoribbons
K Iordanidou, M Houssa, B van den Broek, G Pourtois, VV Afanas’Ev, ...
Journal of Physics: Condensed Matter 28 (3), 035302, 2016
362016
Silicene on non-metallic substrates: Recent theoretical and experimental advances
E Scalise, K Iordanidou, VV Afanas’ ev, A Stesmans, M Houssa
Nano Research 11, 1169-1182, 2018
352018
Functional silicene and stanene nanoribbons compared to graphene: electronic structure and transport
B van den Broek, M Houssa, K Iordanidou, G Pourtois, VV Afanas’ev, ...
2D Materials 3 (1), 015001, 2016
302016
Contact Resistance at MoS2-Based 2D Metal/Semiconductor Lateral Heterojunctions
M Houssa, K Iordanidou, A Dabral, A Lu, G Pourtois, V Afanasiev, ...
ACS Applied Nano Materials 2 (2), 760-766, 2019
282019
Ferromagnetism and half-metallicity in two-dimensional monolayers induced by hole doping
R Meng, M Houssa, K Iordanidou, G Pourtois, V Afanasiev, A Stesmans
Physical Review Materials 4 (7), 074001, 2020
262020
Ferromagnetism in two-dimensional hole-doped SnO
M Houssa, K Iordanidou, G Pourtois, VV Afanas’ev, A Stesmans
AIP Advances 8 (5), 2018
232018
Point defects in MoS2: Comparison between first-principles simulations and electron spin resonance experiments
M Houssa, K Iordanidou, G Pourtois, VV Afanas’ev, A Stesmans
Applied Surface Science 416, 853-857, 2017
202017
Contact resistance at graphene/MoS2 lateral heterostructures
M Houssa, K Iordanidou, A Dabral, A Lu, R Meng, G Pourtois, ...
Applied Physics Letters 114 (16), 2019
172019
Electric field and strain tuning of 2D semiconductor van der Waals heterostructures for tunnel field-effect transistors
K Iordanidou, R Mitra, N Shetty, S Lara-Avila, S Dash, S Kubatkin, J Wiktor
ACS Applied Materials & Interfaces 15 (1), 1762-1771, 2022
162022
Two-dimensional gallium and indium oxides from global structure searching: Ferromagnetism and half metallicity via hole doping
R Meng, M Houssa, K Iordanidou, G Pourtois, V Afanasiev, A Stesmans
Journal of Applied Physics 128 (3), 2020
152020
Two-dimensional van der Waals heterostructures for tunnel-FET applications
K Iordanidou, J Wiktor
Physical Review Materials 6 (8), 084001, 2022
142022
Impact of point defects and oxidation on the electronic properties of HfS2 monolayers
K Iordanidou, M Houssa, G Pourtois, VV Afanas' ev, A Stesmans
ECS Journal of Solid State Science and Technology 5 (11), Q3054, 2016
132016
Oxygen and hydroxyl adsorption on MS2 (M = Mo, W, Hf) monolayers: a first‐principles molecular dynamics study
K Iordanidou, M Houssa, G Pourtois, VV Afanas' ev, A Stesmans
physica status solidi (RRL)–Rapid Research Letters 10 (11), 787-791, 2016
122016
Doping-induced ferromagnetism in InSe and SnO monolayers
M Houssa, R Meng, K Iordanidou, G Pourtois, VV Afanas’ ev, A Stesmans
Journal of Computational Electronics 20, 88-94, 2021
102021
Carrier-mediated ferromagnetism in two-dimensional PtS 2
K Iordanidou, M Houssa, C Persson
RSC advances 10 (2), 952-957, 2020
92020
Hole-doping induced ferromagnetism in monolayer SnO: A first-principles study
M Houssa, K Iordanidou, G Pourtois, VV Afanas' ev, A Stesmans
ECS Transactions 80 (1), 339, 2017
92017
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