| A study on current collapse in AlGaN/GaN HEMTs induced by bias stress T Mizutani, Y Ohno, M Akita, S Kishimoto, K Maezawa IEEE Transactions on Electron Devices 50 (10), 2015-2020, 2003 | 298 | 2003 |
| A new resonant tunneling logic gate employing monostable-bistable transition KMK Maezawa, TMT Mizutani Japanese journal of applied physics 32 (1A), L42, 1993 | 192 | 1993 |
| Effects of surface passivation on breakdown of AlGaN/GaN high-electron-mobility transistors Y Ohno, T Nakao, S Kishimoto, K Maezawa, T Mizutani Applied physics letters 84 (12), 2184-2186, 2004 | 168 | 2004 |
| InP-based high-performance monostable-bistable transition logic elements (MOBILEs) using integrated multiple-input resonant-tunneling devices KJ Chen, K Maezawa, M Yamamoto IEEE Electron Device Letters 17 (3), 127-129, 1996 | 168 | 1996 |
| High-performance InP-based enhancement-mode HEMTs using non-alloyed ohmic contacts and Pt-based buried-gate technologies KJ Chen, T Enoki, K Maezawa, K Arai, M Yamamoto IEEE transactions on electron devices 43 (2), 252-257, 1996 | 166 | 1996 |
| High-speed and low-power operation of a resonant tunneling logic gate MOBILE K Maezawa, H Matsuzaki, M Yamamoto, T Otsuji IEEE Electron Device Letters 19 (3), 80-82, 1998 | 165 | 1998 |
| Functions and applications of monostable-bistable transition logic elements (MOBILE'S) having multiple-input terminals K Maezawa, T Akeyoshi, T Mizutani IEEE Transactions on Electron Devices 41 (2), 148-154, 1994 | 157 | 1994 |
| Weighted sum threshold logic operation of MOBILE (monostable-bistable transition logic element) using resonant-tunneling transistors T Akeyoshi, K Maezawa, T Mizutani IEEE Electron Device Letters 14 (10), 475-477, 1993 | 104 | 1993 |
| Δ-Σ modulator and Δ-Σ A/D converter K Maezawa, T Mizutani US Patent 6,388,597, 2002 | 103 | 2002 |
| Drain current dlts of algan-gan mis-hemts T Okino, M Ochiai, Y Ohno, S Kishimoto, K Maezawa, T Mizutani IEEE Electron Device Letters 25 (8), 523-525, 2004 | 93 | 2004 |
| Large gate leakage current in AlGaN/GaN high electron mobility transistors S Mizuno, Y Ohno, S Kishimoto, K Maezawa, T Mizutani Japanese journal of applied physics 41 (8R), 5125, 2002 | 83 | 2002 |
| Drain current dlts of algan/gan hemts T Mizutani, T Okino, K Kawada, Y Ohno, S Kishimoto, K Maezawa physica status solidi (a) 200 (1), 195-198, 2003 | 75 | 2003 |
| AlGaN/GaN heterostructure metal-insulator-semiconductor high-electron-mobility transistors with Si3N4 gate insulator M Ochiai, M Akita, Y Ohno, S Kishimoto, K Maezawa, T Mizutani Japanese Journal of Applied Physics 42 (4S), 2278, 2003 | 69 | 2003 |
| Position-controlled carbon nanotube field-effect transistors fabricated by chemical vapor deposition using patterned metal catalyst Y Ohno, S Iwatsuki, T Hiraoka, T Okazaki, S Kishimoto, K Maezawa, ... Japanese journal of applied physics 42 (6S), 4116, 2003 | 65 | 2003 |
| Monolithic integration of resonant tunneling diodes and FET's for monostable-bistable transition logic elements (MOBILE's) KJ Chen, T Akeyoshi, K Maezawa IEEE Electron Device Letters 16 (2), 70-73, 1995 | 64 | 1995 |
| AlGaN/GaN MIS‐HEMTs with HfO2 gate insulator A Kawano, S Kishimoto, Y Ohno, K Maezawa, T Mizutani, H Ueno, T Ueda, ... physica status solidi c 4 (7), 2700-2703, 2007 | 56 | 2007 |
| Deep levels in n-type AlGaN grown by hydride vapor-phase epitaxy on sapphire characterized by deep-level transient spectroscopy J Osaka, Y Ohno, S Kishimoto, K Maezawa, T Mizutani Applied Physics Letters 87 (22), 2005 | 54 | 2005 |
| Current collapse in AlGaN/GaN HEMTs investigated by electrical and optical characterizations T Mizutani, Y Ohno, M Akita, S Kishimoto, K Maezawa physica status solidi (a) 194 (2), 447-451, 2002 | 52 | 2002 |
| 88 GHz dynamic 2: 1 frequency divider using resonant tunnelling chaos circuit Y Kawano, Y Ohno, S Kishimoto, K Maezawa, T Mizutani, K Sano Electronics Letters 39 (21), 1, 2003 | 49 | 2003 |
| An exclusive-OR logic circuit based on controlled quenching of series-connected negative differential resistance devices KJ Chen, T Waho, K Maezawa, M Yamamoto IEEE Electron Device Letters 17 (6), 309-311, 1996 | 49 | 1996 |
